Search Results - "Park, Jemin"
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Worse and Worse and Worse: Essential Tremor Patients' Longitudinal Perspectives on Their Condition
Published in Frontiers in neurology (13-10-2016)“…Essential tremor (ET) patients regularly inquire about their prognosis. Therefore, physicians have cause to review available medical literature for meaningful…”
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Whole genome sequencing and rare variant analysis in essential tremor families
Published in PloS one (12-08-2019)“…Essential tremor (ET) is one of the most common movement disorders. The etiology of ET remains largely unexplained. Whole genome sequencing (WGS) is likely to…”
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3
The Efficacy of Cervical Pedicle Screw Is Enhanced When Used With 5.5-mm Rods for Metastatic Cervical Spinal Tumor Surgery
Published in Neurospine (01-03-2024)“…Objective: The cervical spine presents challenges in treating metastatic cervical spinal tumors (MCSTs). Although the efficacy of cervical pedicle screw…”
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4
Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories
Published in IEEE electron device letters (01-12-2009)“…An air-spacer transistor with self-aligned contact (SAC) is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed…”
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5
Genetic Testing Preferences of Individuals in Families with Essential Tremor
Published in Tremor and other hyperkinetic movements (New York, N.Y.) (27-03-2018)“…BackgroundThe search for essential tremor (ET) genes is active, and it is only a matter of time before genetic tests become available. Genetic testing…”
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6
Early Head Tremor in Essential Tremor: A Case Series and Commentary
Published in Tremor and other hyperkinetic movements (New York, N.Y.) (01-01-2017)“…BACKGROUNDClassically, the onset of head tremor in essential tremor (ET) patients follows that of hand tremor, such that there is a somatotopic spread of…”
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Familial Aggregation of the Cerebellar Signs in Familial Essential Tremor
Published in Tremor and other hyperkinetic movements (New York, N.Y.) (01-01-2017)“…BACKGROUNDAlthough the hallmark feature of essential tremor (ET) is kinetic tremor, patients may exhibit additional motor features (e.g., intention tremor and…”
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Air-spacer Self-Aligned Contact MOSFET for future dense memories
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…An air-spacer SAC (self-aligned contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D…”
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Conference Proceeding -
9
Parastomal Hernia Rates and Exercise After Ostomy Surgery
Published in Diseases of the colon & rectum (01-06-2023)“…Parastomal hernias are common and negatively affect patient's lives. We hypothesized that physical activity (or lack thereof) might be associated with the…”
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10
Interactive Training Program Improves Surgeon and Pathologist Comfort Level with Total Mesorectal Excision Grading for Rectal Cancer
Published in Diseases of the colon & rectum (25-10-2021)Get full text
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Interactive Training Program Improves Surgeon and Pathologist Comfort Level With Total Mesorectal Excision Grading for Rectal Cancer
Published in Diseases of the colon & rectum (01-02-2022)“…Total mesorectal excision for rectal cancer has been shown to decrease local recurrence and improve survival, and specimen grading is recommended as a best…”
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12
Assessing Surgical Patient Perspectives and Experiences on Telehealth
Published in Journal of the American College of Surgeons (01-11-2021)Get full text
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13
A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16-06-2024)“…The current dual work function gate (DWFG), utilizing Poly Si, which is applied as a standard in conventional DRAM products, is facing the issue of an…”
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Conference Proceeding -
14
Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14-04-2024)“…A novel vertical channel DRAM cell array transistor has been proposed and verified. A back gate shared by adjacent two word lines has been introduced to have…”
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Conference Proceeding -
15
Integration of High-k Metal Gate (HKMG) to Core/Peri Transistors of DRAM Addressing Reliability Issues
Published in 2024 IEEE European Solid-State Electronics Research Conference (ESSERC) (09-09-2024)“…This paper describes a new integration method for high-k metal gate (HKMG) core/peri transistor for high-performance and low-power DRAM. The present…”
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Conference Proceeding -
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Air spacer MOSFET technology for 20nm node and beyond
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01-10-2008)“…Two types of air spacer technologies are proposed and TCAD simulation is used to construct 20 nm-gate transistor. One is non-SAC (Self Aligned Contact) process…”
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Conference Proceeding -
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Ocular Manifestations of Hospitalized COVID-19 Patients in a Tertiary Care Academic Medical Center in the United States: A Cross-Sectional Study
Published in Clinical ophthalmology (Auckland, N.Z.) (01-01-2021)“…Studies have identified a wide range of ocular signs and symptoms in coronavirus disease 2019 (COVID-19) patients; however, these studies were often conducted…”
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18
The effects of vacuum spacer transistors between high performance and low stand-by power devices beyond 16nm
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01-11-2010)“…The vacuum spacer transistors are compared with the conventional oxide spacer transistors in both high performance device and low standby power device. In high…”
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Conference Proceeding -
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The improvement of HEIP immunity using STI engineering at DRAM
Published in Microelectronics and reliability (01-09-2017)“…The increase of standby current of DRAM caused by the HEIP degradation of p-MOSFET and the way to improve the HEIP immunity without the deterioration of…”
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20
Gate last MOSFET with air spacer and self-aligned contacts for dense memories
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01-04-2009)“…Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET…”
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Conference Proceeding