Search Results - "Park, Jejune"

Formation of Silicene Nanosheets on Graphite by De Crescenzi, Maurizio, Berbezier, Isabelle, Scarselli, Manuela, Castrucci, Paola, Abbarchi, Marco, Ronda, Antoine, Jardali, Fatme, Park, Jejune, Vach, Holger

“…The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely,…”
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Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder by Park, Jejune, Xue, Kan-Hao, Mouis, Mireille, Triozon, Francois, Cresti, Alessandro

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Self-isolating electrode deposition process using the area-selective MoO2 and MoO3 atomic layer deposition technique by Kim, Ye Won, Park, Jejune, Park, Jeong Hyeon, Han, Eul, Jung, Younjae, Jang, Yong Woon, Lee, Min Yung, Jeon, Woojin

“…•Demonstrating a simultaneous electrode and insulator deposition.•The self-isolation electrode formation process for next-generation fabrication process.•The…”
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Realization of CMOS operation in 3-dimensional stacked FET with self-aligned direct backside contact by Park, Juhun, Park, Jaehyun, Park, Jejune, Hwang, Kyuman, Yun, Jinchan, Kim, Dahye, Park, Sungil, Yang, Jinwook, Jeong, Jae Won, Yun, Chuljin, Bae, Jinho, Huh, Daihong, Yeon, Deukho, Kim, Sanghyeon, Baek, Seungeun, Son, Soomin, Lee, Junghan, Kim, Tae-sun, Lee, Seungjun, Lee, Sun-Jung, Park, Sang Wuk, Kuh, Bong Jin, Ha, Daewon, Hyun, Sangjin, Ahn, Su Jin, Song, Jaihyuk

“…Abstract Beyond MBCFETTM technology, the 3-dimensional stacked FET (3DSFET) emerges as a promising contender, featuring a structure that stacks NMOS and PMOS…”
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Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility by Kim, Seong Kwang, Lim, Hyeong-Rak, Jeong, Jaeyong, Park, Youngkeun, Park, Jejune, Park, Sungil, Park, Jaehyun, Ha, Daewon, Cho, Byung Jin, Kim, Sanghyeon

“…In this study, we demonstrated heterogeneous 3D monolithic CFETs (mCFETs) by utilizing Ge (110)/ gate-all-around (GAA) nanosheet p-FETs as the top-tier…”
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In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO 3 by Kim, Hangyel, Kim, Jong Hun, Kim, Jungcheol, Park, Jejune, Park, Kwanghee, Baek, Ji-Hwan, Shin, June-Chul, Lee, Hyeongseok, Son, Jangyup, Ryu, Sunmin, Son, Young-Woo, Cheong, Hyeonsik, Lee, Gwan-Hyoung

“…van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing…”
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In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3 by Kim, Hangyel, Kim, Jong Hun, Kim, Jungcheol, Park, Jejune, Park, Kwanghee, Baek, Ji-Hwan, Shin, June-Chul, Lee, Hyeongseok, Son, Jangyup, Ryu, Sunmin, Son, Young-Woo, Cheong, Hyeonsik, Lee, Gwan-Hyoung

“…van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing…”
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Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch by Park, Jaehyun, Park, Juhun, Hwang, Kyuman, Yun, Jinchan, Kim, Dahye, Park, Sungil, Park, Jejune, Yang, Jinwook, Jeong, Jae Won, Yun, Chuljin, Bae, Jinho, Park, Sam, Huh, Daihong, Kim, Sanghyeon, Baek, Seungeun, Yang, Suk, Zoh, Inhae, Lee, Junghan, Kim, Tae-sun, Ha, Younsu, Lee, Sun-Jung, Park, Sang Wuk, Kuh, Bong Jin, Ha, Daewon, Hyun, Sangjin, Ahn, Su Jin, Song, Jaihyuk

“…In this study, we have demonstrated 3-Dimensional Stacked FET (3DSFET) with Self-Aligned Direct Back-side Contact (SA-DBC) and Back-side Gate Contact (BGC) in…”
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First demonstration of SRAM transistor based on 3-dimensional stacked FET with back side interconnection structure beyond 1nm node by Kim, Mingyu, Park, Jaehyun, Park, Sungil, Park, Jejune, Kim, Juhyun, Ha, Daewon, Shin, Hyungcheol

“…For the first time, we report SRAM transistor demonstration based on 3-Dimensional Stacked FET (3DSFET) with Back Side Interconnection (BSI) structure. The use…”
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First demonstration of 3-dimensional stacked FET with top/bottom source-drain isolation and stacked n/p metal gate by Park, Jaehyun, Kim, Wukang, Park, Sungil, Yun, Jinchan, Hwang, Kyuman, Yang, Jinwook, Kim, Dahye, Jeong, Jae Won, Yun, Chuljin, Bae, Jinho, Park, Jejune, Park, Sam, Huh, Woong, Huh, Daihong, Yang, Suk, Lee, Junghan, Seo, Jaehoon, Kim, Ajeong, Oh, Kyungseok, Yoo, Donggon, Kuh, Bong Jin, Ha, Daewon, Shin, Yu Gyun, Song, Jaihyuk

“…We report world's first demonstration of n- and pMOSFET in 3-Dimensional Stacked FET (3DSFET) with vertically stacked n/p metal gate and isolated source/drain…”
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Symmetry-Protected Degeneracies in the Electronic Band Structure of Oxidized Black Phosphorous by Kang, Seoung-Hun, Park, Jejune, Woo, Sungjong, Kwon, Young-Kyun

“…Phys. Chem. Chem. Phys. 21(43), 24206-24211 (2019) We explore the oxidation of a single layer of black phosphorous using ab initio density functional theory…”
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