Search Results - "Park, Hyunik"
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Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process
Published in Applied physics letters (10-01-2022)“…Metal–insulator–semiconductor (MIS) capacitors composed of low-dimensional van der Waals (vdW) materials are of fundamental interest for understanding carrier…”
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2
Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors
Published in Advanced materials interfaces (01-07-2021)“…Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics…”
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Journal Article -
3
CdTe microwire-based ultraviolet photodetectors aligned by a non-uniform electric field
Published in Applied physics letters (29-07-2013)“…We report on ultraviolet (UV) photodetectors fabricated by positioning Cadmium Telluride (CdTe) microwires (μWs) precisely by dielectrophoretic (DEP) force,…”
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4
Programmable Synapse‐Like MoS2 Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation
Published in Advanced electronic materials (01-05-2020)“…Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for synaptic devices…”
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5
Programmable Synapse‐Like MoS 2 Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation
Published in Advanced electronic materials (01-05-2020)“…Abstract Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for…”
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Journal Article -
6
Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2021)“…β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and…”
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7
Programmable Multilevel Memtransistors Based on van der Waals Heterostructures
Published in Advanced electronic materials (01-10-2019)“…Neuromorphic computing that mimics the energy‐efficient cortical neural network in the human brain is attractive because of its possibility to process complex…”
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Journal Article -
8
Morphology controlled nanocrystalline CsPbBr3 thin-film for metal halide perovskite light emitting diodes
Published in Journal of industrial and engineering chemistry (Seoul, Korea) (25-05-2021)“…[Display omitted] •Morphology and crystal grain size of CsPbBr3 is controllable by diffusion controlled anti-solvent dripping crystallization.•8:2…”
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9
All-2D ReS2 transistors with split gates for logic circuitry
Published in Scientific reports (17-07-2019)“…Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future…”
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10
High-energy proton irradiation damage on two-dimensional hexagonal boron nitride
Published in RSC advances (11-06-2019)“…The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its…”
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Journal Article -
11
Defect‐Engineered n‐Doping of WSe 2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors
Published in Advanced materials interfaces (01-07-2021)“…Abstract Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in…”
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Journal Article -
12
High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact
Published in 2018 76th Device Research Conference (DRC) (01-06-2018)“…Layered black phosphorus (BP) exhibits desirable properties for nano-(opto)electronic device applications such as atomically thin body, direct bandgap (0.3 eV…”
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Conference Proceeding -
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Memtransistors: Programmable Multilevel Memtransistors Based on van der Waals Heterostructures (Adv. Electron. Mater. 10/2019)
Published in Advanced electronic materials (01-10-2019)“…In article number 1900333, Jihyun Kim and co‐workers demonstrate a programmable memtransistor architecture based on van der Waals heterostructure with high…”
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Journal Article -
14
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
Published in Optics express (05-11-2012)“…We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were…”
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15
A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells
Published in Optics express (20-05-2013)“…We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a…”
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Journal Article -
16
Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes
Published in Optics express (19-12-2011)“…Electroluminescence (EL) was obtained from a p-Si (100) thin film/nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP)…”
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Journal Article -
17
All-2D ReS 2 transistors with split gates for logic circuitry
Published in Scientific reports (17-07-2019)“…Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future…”
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Journal Article