Search Results - "Park, Hyunik"

  • Showing 1 - 17 results of 17
Refine Results
  1. 1

    Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process by Im, HoHyun, Lee, Geonyeop, Park, Hyunik, Lee, Dongryul, Kim, Jihyun

    Published in Applied physics letters (10-01-2022)
    “…Metal–insulator–semiconductor (MIS) capacitors composed of low-dimensional van der Waals (vdW) materials are of fundamental interest for understanding carrier…”
    Get full text
    Journal Article
  2. 2

    Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors by Kim, Junghun, Park, Hyunik, Yoo, SangHyuk, Im, Yeon‐Ho, Kang, Keonwook, Kim, Jihyun

    Published in Advanced materials interfaces (01-07-2021)
    “…Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics…”
    Get full text
    Journal Article
  3. 3

    CdTe microwire-based ultraviolet photodetectors aligned by a non-uniform electric field by Park, Hyunik, Yang, Gwangseok, Chun, Seungju, Kim, Donghwan, Kim, Jihyun

    Published in Applied physics letters (29-07-2013)
    “…We report on ultraviolet (UV) photodetectors fabricated by positioning Cadmium Telluride (CdTe) microwires (μWs) precisely by dielectrophoretic (DEP) force,…”
    Get full text
    Journal Article
  4. 4

    Programmable Synapse‐Like MoS2 Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation by Park, Hyunik, Kim, Jihyun

    Published in Advanced electronic materials (01-05-2020)
    “…Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for synaptic devices…”
    Get full text
    Journal Article
  5. 5

    Programmable Synapse‐Like MoS 2 Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation by Park, Hyunik, Kim, Jihyun

    Published in Advanced electronic materials (01-05-2020)
    “…Abstract Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for…”
    Get full text
    Journal Article
  6. 6

    Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique by Park, Hyunik, Choi, Yongha, Yang, Sujung, Bae, Jinho, Kim, Jihyun

    “…β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and…”
    Get full text
    Journal Article
  7. 7

    Programmable Multilevel Memtransistors Based on van der Waals Heterostructures by Park, Hyunik, Mastro, Michael A., Tadjer, Marko J., Kim, Jihyun

    Published in Advanced electronic materials (01-10-2019)
    “…Neuromorphic computing that mimics the energy‐efficient cortical neural network in the human brain is attractive because of its possibility to process complex…”
    Get full text
    Journal Article
  8. 8

    Morphology controlled nanocrystalline CsPbBr3 thin-film for metal halide perovskite light emitting diodes by Kim, Bong Woo, Heo, Jin Hyuck, Park, Jin Kyoung, Lee, David Sunghwan, Park, Hyunik, Kim, Seong Yeon, Kim, Jun Ho, Im, Sang Hyuk

    “…[Display omitted] •Morphology and crystal grain size of CsPbBr3 is controllable by diffusion controlled anti-solvent dripping crystallization.•8:2…”
    Get full text
    Journal Article
  9. 9

    All-2D ReS2 transistors with split gates for logic circuitry by Kwon, Junyoung, Shin, Yongjun, Kwon, Hyeokjae, Lee, Jae Yoon, Park, Hyunik, Watanabe, Kenji, Taniguchi, Takashi, Kim, Jihyun, Lee, Chul-Ho, Im, Seongil, Lee, Gwan-Hyoung

    Published in Scientific reports (17-07-2019)
    “…Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future…”
    Get full text
    Journal Article
  10. 10

    High-energy proton irradiation damage on two-dimensional hexagonal boron nitride by Lee, Dongryul, Yoo, Sanghyuk, Bae, Jinho, Park, Hyunik, Kang, Keonwook, Kim, Jihyun

    Published in RSC advances (11-06-2019)
    “…The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its…”
    Get full text
    Journal Article
  11. 11

    Defect‐Engineered n‐Doping of WSe 2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors by Kim, Junghun, Park, Hyunik, Yoo, SangHyuk, Im, Yeon‐Ho, Kang, Keonwook, Kim, Jihyun

    Published in Advanced materials interfaces (01-07-2021)
    “…Abstract Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in…”
    Get full text
    Journal Article
  12. 12

    High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact by Park, Hyunik, Bae, Jinho, Kim, Jihyun

    Published in 2018 76th Device Research Conference (DRC) (01-06-2018)
    “…Layered black phosphorus (BP) exhibits desirable properties for nano-(opto)electronic device applications such as atomically thin body, direct bandgap (0.3 eV…”
    Get full text
    Conference Proceeding
  13. 13

    Memtransistors: Programmable Multilevel Memtransistors Based on van der Waals Heterostructures (Adv. Electron. Mater. 10/2019) by Park, Hyunik, Mastro, Michael A., Tadjer, Marko J., Kim, Jihyun

    Published in Advanced electronic materials (01-10-2019)
    “…In article number 1900333, Jihyun Kim and co‐workers demonstrate a programmable memtransistor architecture based on van der Waals heterostructure with high…”
    Get full text
    Journal Article
  14. 14

    Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields by Park, Hyunik, Kim, Byung-Jae, Kim, Jihyun

    Published in Optics express (05-11-2012)
    “…We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were…”
    Get full text
    Journal Article
  15. 15

    A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells by Park, Hyunik, Baik, Kwang Hyeon, Kim, Jihyun, Ren, Fan, Pearton, Stephen J

    Published in Optics express (20-05-2013)
    “…We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a…”
    Get full text
    Journal Article
  16. 16

    Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes by Ahn, Jaehui, Park, Hyunik, Mastro, Michael A, Hite, Jennifer K, Eddy, Jr, Charles R, Kim, Jihyun

    Published in Optics express (19-12-2011)
    “…Electroluminescence (EL) was obtained from a p-Si (100) thin film/nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP)…”
    Get full text
    Journal Article
  17. 17

    All-2D ReS 2 transistors with split gates for logic circuitry by Kwon, Junyoung, Shin, Yongjun, Kwon, Hyeokjae, Lee, Jae Yoon, Park, Hyunik, Watanabe, Kenji, Taniguchi, Takashi, Kim, Jihyun, Lee, Chul-Ho, Im, Seongil, Lee, Gwan-Hyoung

    Published in Scientific reports (17-07-2019)
    “…Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future…”
    Get full text
    Journal Article