Search Results - "Parfenov, Oleg E"

Emerging two-dimensional ferromagnetism in silicene materials by Tokmachev, Andrey M., Averyanov, Dmitry V., Parfenov, Oleg E., Taldenkov, Alexander N., Karateev, Igor A., Sokolov, Ivan S., Kondratev, Oleg A., Storchak, Vyacheslav G.

“…The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in…”
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High-Temperature Magnetism in Graphene Induced by Proximity to EuO by Averyanov, Dmitry V, Sokolov, Ivan S, Tokmachev, Andrey M, Parfenov, Oleg E, Karateev, Igor A, Taldenkov, Alexander N, Storchak, Vyacheslav G

“…Addition of magnetism to spectacular properties of graphene may lead to novel topological states and design of spin logic devices enjoying low power…”
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Magnetically intercalated multilayer silicene by Tokmachev, Andrey M., Averyanov, Dmitry V., Karateev, Igor A., Parfenov, Oleg E., Kondratev, Oleg A., Taldenkov, Alexander N., Storchak, Vyacheslav G.

“…Silicene, a Si-based analogue of graphene, is predicted to exhibit topological electronic phases with exotic properties capable to revolutionize electronics…”
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High‐Mobility Carriers in Germanene Derivatives by Parfenov, Oleg E., Averyanov, Dmitry V., Tokmachev, Andrey M., Sokolov, Ivan S., Karateev, Igor A., Taldenkov, Alexander N., Storchak, Vyacheslav G.

“…Buckled elemental analogs of graphene—2D‐Xenes silicene, germanene, and stanene—and their derivatives are predicted to host high‐mobility carriers…”
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Exchange Bias State at the Crossover to 2D Ferromagnetism by Averyanov, Dmitry V., Sokolov, Ivan S., Taldenkov, Alexander N., Parfenov, Oleg E., Karateev, Igor A., Kondratev, Oleg A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally,…”
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Engineering of a Layered Ferromagnet via Graphitization: An Overlooked Polymorph of GdAlSi by Averyanov, Dmitry V., Sokolov, Ivan S., Taldenkov, Alexander N., Parfenov, Oleg E., Larionov, Konstantin V., Sorokin, Pavel B., Kondratev, Oleg A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of…”
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Two-Dimensional Magnets beyond the Monolayer Limit by Tokmachev, Andrey M, Averyanov, Dmitry V, Taldenkov, Alexander N, Sokolov, Ivan S, Karateev, Igor A, Parfenov, Oleg E, Storchak, Vyacheslav G

“…Intrinsic two-dimensional (2D) magnetism has been demonstrated in various materials scaled down to a single monolayer. However, the question is whether 2D…”
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Emerging 2D Ferromagnetism in Graphenized GdAlSi by Averyanov, Dmitry V., Sokolov, Ivan S., Taldenkov, Alexander N., Parfenov, Oleg E., Kondratev, Oleg A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…2D magnets are expected to give new insights into the fundamentals of magnetism, host novel quantum phases, and foster development of ultra‐compact…”
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Thickness-Dependent Superconductivity in a Layered Electride on Silicon by Averyanov, Dmitry V, Sokolov, Ivan S, Parfenov, Oleg E, Taldenkov, Alexander N, Karateev, Igor A, Kondratev, Oleg A, Tokmachev, Andrey M, Storchak, Vyacheslav G

“…Layered materials exhibit a plethora of fascinating properties. The challenge is to make the materials into epitaxial films, preferably integrated with mature…”
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Universal Interface between Functional Oxides and Silicon by Averyanov, Dmitry V., Sokolov, Ivan S., Karateev, Igor A., Taldenkov, Alexander N., Parfenov, Oleg E., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Integration of crystalline oxides with silicon provides a versatile platform to extend and advance silicon technology. The interface between oxide and Si…”
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Proximity Coupling of Graphene to a Submonolayer 2D Magnet by Sokolov, Ivan S., Averyanov, Dmitry V., Parfenov, Oleg E., Taldenkov, Alexander N., Rybin, Maxim G., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Imprinting magnetism into graphene may lead to unconventional electron states and enable the design of spin logic devices with low power consumption. The…”
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Two-dimensional ferromagnetism in Eu-intercalated few-layer graphene by Sokolov, Ivan S., Averyanov, Dmitry V., Parfenov, Oleg E., Taldenkov, Alexander N., Karateev, Igor A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…•A europium lattice between graphene monolayers forms a van der Waals compound.•Europium-intercalated few-layer graphene exhibits two-dimensional…”
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Dimensionality Concept in Solid‐State Reactions: A Way to Control Synthesis of Functional Materials at the Nanoscale by Tokmachev, Andrey M., Averyanov, Dmitry V., Karateev, Igor A., Sokolov, Ivan S., Parfenov, Oleg E., Storchak, Vyacheslav G.

“…The concept of dimensionality is fundamental in physics, chemistry, materials science, etc. Low‐dimensional and layered materials are distinguished by their…”
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Engineering of Magnetically Intercalated Silicene Compound: An Overlooked Polymorph of EuSi2 by Tokmachev, Andrey M., Averyanov, Dmitry V., Karateev, Igor A., Parfenov, Oleg E., Kondratev, Oleg A., Taldenkov, Alexander N., Storchak, Vyacheslav G.

“…Silicene, a Si analogue of graphene, is suggested to become a versatile material for nanoelectronics. Being coupled with magnetism, it is predicted to be…”
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Emerging 2D magnetic states in a graphene-based monolayer of EuC6 by Sokolov, Ivan S., Averyanov, Dmitry V., Wilhelm, Fabrice, Rogalev, Andrei, Parfenov, Oleg E., Taldenkov, Alexander N., Karateev, Igor A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Recent discoveries of intrinsic two-dimensional (2D) magnets open up vast opportunities to address fundamental problems in condensed matter physics, giving…”
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Chaos at Interface Brings Order into Oxide/Silicon Structure by Averyanov, Dmitry V., Sokolov, Ivan S., Karateev, Igor A., Taldenkov, Alexander N., Kondratev, Oleg A., Parfenov, Oleg E., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Integration of oxides with silicon fuses advanced functional properties with a mature technological platform. In particular, direct EuO/Si contact holds high…”
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High Carrier Mobility in a Layered Antiferromagnet Integrated with Silicon by Parfenov, Oleg E, Averyanov, Dmitry V, Sokolov, Ivan S, Taldenkov, Alexander N, Karateev, Igor A, Tokmachev, Andrey M, Storchak, Vyacheslav G

“…Coupling various functional properties in one material is always a challenge, more so if the material should be nanostructured for practical applications…”
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Competing magnetic states in silicene and germanene 2D ferromagnets by Averyanov, Dmitry V., Sokolov, Ivan S., Platunov, Mikhail S., Wilhelm, Fabrice, Rogalev, Andrei, Gargiani, Pierluigi, Valvidares, Manuel, Jaouen, Nicolas, Parfenov, Oleg E., Taldenkov, Alexander N., Karateev, Igor A., Tokmachev, Andrey M., Storchak, Vyacheslav G.

“…Two-dimension (2D) magnets have recently developed into a class of stoichiometric materials with prospective applications in ultra-compact spintronics and…”
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Europium Silicide – a Prospective Material for Contacts with Silicon by Averyanov, Dmitry V., Tokmachev, Andrey M., Karateeva, Christina G., Karateev, Igor A., Lobanovich, Eduard F., Prutskov, Grigory V., Parfenov, Oleg E., Taldenkov, Alexander N., Vasiliev, Alexander L., Storchak, Vyacheslav G.

“…Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace…”
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Direct epitaxial integration of the ferromagnetic semiconductor EuO with Si(1 1 1) by Averyanov, Dmitry V., Sokolov, Ivan S., Tokmachev, Andrey M., Karateev, Igor A., Kondratev, Oleg A., Taldenkov, Alexander N., Parfenov, Oleg E., Storchak, Vyacheslav G.

“…•The ferromagnetic semiconductor EuO is integrated with Si(1 1 1).•The polar heterointerface is atomically sharp.•Formation of alien phases is prevented by a…”
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