Load-Modulation Technique for Next Generation Mobile

In this research, an asymmetrical load-modulation power amplifier is proposed and described. The designed amplifier uses two GaN HEMT transistors with 25W and 45W peak power. The designed amplifier is targeting the sub-6 GHz 5G spectrum with 200 MHz bandwidth at a center frequency of 3.4 GHz to achi...

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Bibliographic Details
Published in:	2019 IEEE 2nd 5G World Forum (5GWF) pp. 208 - 213
Main Authors:	Abdulkhaleq, Ahmed M., Yahya, Maan A., Brunning, Jack, Al-Yasir, Yasir, Parchin, Naser O., Rayit, Ashwain, Abd-Alhameed, Raed A., Noras, James
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-09-2019
Subjects:	AM/AM AM/PM back-off power Doherty amplifier efficiency Gain Impedance Impedance matching load modulation Modulation Power amplifiers Power generation quarter-wavelength Transistors
Online Access:	Get full text
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Summary:	In this research, an asymmetrical load-modulation power amplifier is proposed and described. The designed amplifier uses two GaN HEMT transistors with 25W and 45W peak power. The designed amplifier is targeting the sub-6 GHz 5G spectrum with 200 MHz bandwidth at a center frequency of 3.4 GHz to achieve a 70 W peak power with peak efficiency at 8 dB back-off. The performance of the fabricated circuit was able to show good efficiency at the back-off region. In addition, the amplifier was tested using a continuous wave (CW) and an 8 dB peak-to-average power ratio (PAPR). The measurements results using CW reveal a power-added efficiency (PAE) of 45% at the back-off region and more than 60% achieved at the peak power. Whereas the measurements using the modulated signal achieved 42% at 40 dB average output power with a 31 dB adjacent channel power ratio. Good isolation between the amplifiers' input is needed to minimize the effect of the reflected waves on the load-modulation operation.
DOI:	10.1109/5GWF.2019.8911689