Search Results - "Parbrook, P.J"

Structural and optical properties of Ga auto-incorporated InAlN epilayers by Taylor, E., Smith, M.D., Sadler, T.C., Lorenz, K., Li, H.N., Alves, E., Parbrook, P.J., Martin, R.W.

“…InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when…”
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A study of dislocations in AlN and GaN films grown on sapphire substrates by Bai, J., Wang, T., Parbrook, P.J., Lee, K.B., Cullis, A.G.

“…The dislocations in epitaxial AlN film directly grown on (0 0 0 1) sapphire have been investigated by transmission electron microscope and X-ray diffraction…”
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Time Evolution of the Screening of Piezoelectric Fields in InGaN Quantum Wells by Brown, I.H., Blood, P., Smowton, P.M., Thomson, J.D., Olaizola, S.M., Fox, A.M., Parbrook, P.J., Chow, W.W.

“…We have measured the time response of the emission spectra of In 0.07 Ga 0.93 N quantum wells with widths of 2, 3, and 4nm in GaN following pulsed optical…”
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In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region by Dylewicz, R., Patela, S., Hogg, R.A., Fry, P.W., Parbrook, P.J., Airey, R., Tahraoui, A.

“…The optical properties of metal-organic chemical vapor deposition gallium nitride layers were measured with the use of a grating-assisted optical coupler. The…”
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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy by Dinh, Duc V., Alam, S.N., Parbrook, P.J.

“…The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on (101¯0) sapphire by metalorganic vapour phase…”
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Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy by Dinh, Duc V., Conroy, M., Zubialevich, V.Z., Petkov, N., Holmes, J.D., Parbrook, P.J.

“…Heteroepitaxial growth of AlN buffer layers directly on (101¯0) sapphire substrates by metalorganic vapour phase epitaxy has been investigated. A single-step…”
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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system by Lacey, G., Whitehouse, C.R., Parbrook, P.J., Cullis, A.G., Keir, A.M., Möck, P., Johnson, A.D., Smith, G.W., Clark, G.F., Tanner, B.K., Martin, T., Lunn, B., Hogg, J.H.C., Emeny, M.T., Murphy, B., Bennett, S.

“…In-situ X-ray topography (XRT) studies of misfit dislocation generation and movement in epitaxial InGaAs strained-layer structures on (001) GaAs are described…”
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Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure by Higgins, L J, Karanikolas, V D, Marocico, C A, Bell, A P, Sadler, T C, Parbrook, P J, Bradley, A L

“…An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum…”
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Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes by Lee, K.B., Parbrook, P.J., Wang, T., Bai, J., Ranalli, F., Airey, R.J., Hill, G.

“…The effect of the AlGaN electron blocking layer (EBL) thickness on the electrical and optical properties of 310 nm AlGaN single quantum well (SQW)…”
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InGaN/GaN quantum wells with low growth temperature GaN cap layers by Pendlebury, S.T., Parbrook, P.J., Mowbray, D.J., Wood, D.A., Lee, K.B.

“…The use of a low growth temperature, thin (0–30 Å) GaN cap is investigated as a means to reduce indium desorption following the growth of InGaN quantum wells…”
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Generation of misfit dislocations in highly mismatched GaN/AlN layers by Bai, J., Wang, T., Lee, K.B., Parbrook, P.J., Wang, Q., Cullis, A.G.

“…A grid of regularly-distributed misfit dislocation (MD) arrays is observed in GaN films grown on AlN buffer layers by plan-view and cross-sectional…”
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V-shaped pits formed at the GaN/AlN interface by Bai, J., Wang, T., Parbrook, P.J., Ross, I.M., Cullis, A.G.

“…A high-quality GaN layer has been achieved using an AlN buffer layer directly grown on a sapphire substrate at high temperature. The microstructure was…”
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Effect of anneal temperature on GaN nucleation layer transformation by Lada, M, Cullis, A.G, Parbrook, P.J

“…The effect of anneal temperature on the nucleation layer transformation of GaN deposited on sapphire by metalorganic vapour phase epitaxy has been investigated…”
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Highly improved performance of a 350 nm ultraviolet light-emitting diode containing Al xGa 1− xN/Al yGa 1− yN distributed Bragg reflectors by Wang, T, Parbrook, P.J, Harrison, C.N, Ao, J.P, Ohno, Y

“…By introducing Al 0.49Ga 0.51N/Al 0.16Ga 0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light–emitting diode (LED) with an…”
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Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors by Wang, T, Parbrook, P.J, Harrison, C.N, Ao, J.P, Ohno, Y

“…By introducing Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an…”
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Study of stimulated emission from InGaN/GaN multiple quantum well structures by Wang, T., Parbrook, P.J., Whitehead, M.A., Fan, W.H., Fox, A.M.

“…A stimulated emission under high optical pumping was investigated on InGaN/GaN multiple quantum well (MQW) structures as a function of well thickness at room…”
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Static and growing InP and InAs surfaces : reflection-anisotropy spectroscopy under the conditions of solid-source MBE by OZANYAN, K. B, PARBROOK, P. J, HOPKINSON, M, WHITEHOUSE, C. R

“…This presentation gives a current overview of the results obtained in situ and in real time by reflection-anisotropy (RA) spectroscopy, and complemented by…”
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Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs by Xia, R, Harrison, I, Larkins, E.C, Andrianov, A.V, Dods, S.R.A, Morgan, J, Parbrook, P.J, Button, C.C, Hill, G

“…The luminescence properties of InGaN multiquantum well (MQW) light emitting diodes (LEDs) with various emission wavelengths were investigated using…”
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Screening of Piezoelectric Fields in InGaN Quantum Well Laser Structures by Brown, I.H., Blood, P., Smowton, P.M., Thomson, J.D., Olaizola, M., Fox, A.M., Parbrook, P.J., Chow, W.W.

“…By modelling time resolved emission spectra of 3 and 4 nm In 0.07 Ga 0.93 N quantum wells we show that injected carriers reduce the internal field to only 70%…”
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The Influence of Buffer Layer Growth Parameters on the Microstructure and Surface Morphology of GaN on Sapphire Substrates Correlated with in-situ Reflectivity by Wood, D.A., Parbrook, P.J., Lynch, R.J., Lada, M., Cullis, A.G.

“…GaN low temperature nucleation and high temperature buffer layers have been grown by metalorganic vapour phase epitaxy. The effect of nucleation layer…”
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