Search Results - "Paramahans Manik, Prashanth"

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  1. 1

    Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer by Dev, Sachin, Remesh, Nayana, Rawal, Yaksh, Manik, Prashanth Paramahans, Wood, Bingxi, Lodha, Saurabh

    Published in Applied physics letters (07-03-2016)
    “…This work demonstrates the benefit of a lower contact barrier height, and hence reduced contact resistivity (ρc ), using a low work-function metal (Yb) in…”
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    Journal Article
  2. 2

    Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer by Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Pavan Kishore, V., Ray, Prasenjit, Nainani, Aneesh, Huang, Yi-Chiau, Abraham, Mathew C., Ganguly, Udayan, Lodha, Saurabh

    Published in Applied physics letters (29-10-2012)
    “…We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350°C post metallization anneal is used to create…”
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    Journal Article
  3. 3

    Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium by Manik, Prashanth Paramahans, Mishra, Ravi Kesh, Ganguly, Udayan, Lodha, Saurabh

    Published in 72nd Device Research Conference (01-06-2014)
    “…Summary form only given. Recent reports have demonstrated the suitability of ZnO as an interfacial layer for unpinned, low resistance metal-interfacial…”
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    Conference Proceeding