Search Results - "Paramahans Manik, Prashanth"
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Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer
Published in Applied physics letters (07-03-2016)“…This work demonstrates the benefit of a lower contact barrier height, and hence reduced contact resistivity (ρc ), using a low work-function metal (Yb) in…”
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Journal Article -
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Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
Published in Applied physics letters (29-10-2012)“…We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350°C post metallization anneal is used to create…”
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Journal Article -
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Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium
Published in 72nd Device Research Conference (01-06-2014)“…Summary form only given. Recent reports have demonstrated the suitability of ZnO as an interfacial layer for unpinned, low resistance metal-interfacial…”
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Conference Proceeding