Search Results - "Paradzah, A T"

Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width by Omotoso, E, Paradzah, A T, Igumbor, E, Taleatu, B A, Meyer, W E, Auret, F D

“…The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky…”
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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes by Paradzah, A. T., Omotoso, E., Legodi, M. J., Auret, F. D., Meyer, W. E., Diale, M.

“…The effect of high energy electron irradiation on Ni/4 H -SiC Schottky barrier diodes was evaluated by current–voltage ( I – V ) and capacitance–voltage ( C –…”
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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons by Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.

“…We have characterised the deep level defects present before and after annealing the proton-irradiated Ni/nitrogen-doped 4H-SiC Schottky barrier diodes (SBDs)…”
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Reduction of recombination rates due to volume increasing, annealing, and tetraethoxysilicate treatment in hematite thin films by Congolo, S., Madito, M. J., Paradzah, A. T., Harrison, A. J., Elnour, H. M. A. M., Krüger, T. P. J., Diale, M.

“…We report on the properties of hematite thin films prepared by spray pyrolysis on fluorine-doped tin oxide (FTO)-coated glass substrates and investigated the…”
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Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density by Paradzah, A.T., Auret, F.D., Legodi, M.J., Omotoso, E., Diale, M.

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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes by Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J.

“…The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×1015cm−3 has been…”
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Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC by Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E., Auret, F.D.

“…The effect of high energy electron (HEE) irradiation on nickel Schottky contacts fabricated on lowly-doped n-type 4H-SiC was investigated by deep level…”
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Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC by Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J., Ngoepe, P.N.M.

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Electrical characterization of 5.4MeV alpha-particle irradiated 4H-SiC with low doping density by Paradzah, A.T., Auret, F.D., Legodi, M.J., Omotoso, E., Diale, M.

“…Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with about ten orders of magnitude between −50V and +2V. The…”
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Effects of 5.4MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC by Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J., Ngoepe, P.N.M.

“…Current–voltage, capacitance–voltage and conventional deep level transient spectroscopy at temperature ranges from 40 to 300K have been employed to study the…”
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