Search Results - "Papasouliotis, George D."

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates by Su, Jie, Posthuma, Niels, Wellekens, Dirk, Saripalli, Yoga N., Decoutere, Stefaan, Arif, Ronald, Papasouliotis, George D.

“…We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer…”
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Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor by Su, Jie, Armour, Eric A., Krishnan, Balakrishnan, Lee, Soo Min, Papasouliotis, George D.

“…We are reporting on stress engineering utilizing AlN/GaN superlattices (SLs) for epitaxy of GaN layers on 200 mm silicon substrates carried out in Veeco's…”
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Uniform growth of III-nitrides on 200mm silicon substrates using a single wafer rotating disk MOCVD reactor by Su, Jie, Armour, Eric, Lee, Soo Min, Arif, Ronald, Papasouliotis, George D

“…We are reporting on the uniform growth of III-nitrides (AlN, GaN, and AlGaN layers) on 200mm silicon substrates using Veeco's Propel rotating disk, single…”
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Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor by Su, Jie, Armour, Eric, Lee, Soo Min, Arif, Ronald, Papasouliotis, George D.

“…We are reporting on the uniform growth of III‐nitrides (AlN, GaN, and AlGaN layers) on 200 mm silicon substrates using Veeco's Propel rotating disk, single…”
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Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor: Uniform growth of III-nitrides on 200 mm silicon substrates by Su, Jie, Armour, Eric, Lee, Soo Min, Arif, Ronald, Papasouliotis, George D.

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Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane by Papasouliotis, George D., Sotirchos, Stratis V.

“…A comprehensive study of the chemical vapor deposition of SiC from methyltrichlorosilane at atmospheric pressure was conducted in this study; its main…”
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Kinetic investigation of the chemical vapor deposition of silicon carbide through thermal decomposition of methyltrichlorosilane by Papasouliotis, George D

“…A comprehensive investigation of the deposition kinetics of silicon carbide through the thermal decomposition of methyltrichlorosilane in hydrogen is the…”
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Advanced plasma doping technique for USJ by Godet, L., Papasouliotis, G.D., Kontos, A., Miller, T., Singh, V.

“…SDE implants were carried out in a VIISta PLAD system using both p- and n-type dopant precursors. The advanced control features in the PLAD system allowed for…”
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