Search Results - "Paolucci, G. M."

A single-electron analysis of NAND flash memory programming by Nicosia, G., Paolucci, G. M., Compagnoni, C. Monzio, Resnati, D., Miccoli, C., Spinelli, A. S., Lacaita, A. L., Visconti, A., Goda, A.

“…We present the first single-electron analysis of the program operation of NAND Flash arrays. The analysis leads, first of all, to a direct extraction not only…”
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Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories by Paolucci, G.M., Bertuccio, M., Monzio Compagnoni, C., Beltrami, S., Spinelli, A.S., Lacaita, A.L., Visconti, A.

“…This paper highlights that cycling-induced threshold-voltage instabilities in nanoscale NAND Flash technologies display a non-negligible dependence on the…”
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Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern by Paolucci, G. M., Bertuccio, M., Compagnoni, C. Monzio, Beltrami, S., Spinelli, A. S., Lacaita, A. L., Visconti, A.

“…This work investigates cycling-induced threshold-voltage instabilities in nanoscale NAND Flash cells as a function of the array background pattern…”
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Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories by Miccoli, C., Barber, J., Compagnoni, C. M., Paolucci, G. M., Kessenich, J., Lacaita, A. L., Spinelli, A. S., Koval, R. J., Goda, A.

“…We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper…”
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Iron sites in the FeCr ordered sigma phase by Gupta, Ajay, Principi, G., Paolucci, G. M., Gauzzi, F.

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Temperature activation of the string current and its variability in 3-D NAND flash arrays by Resnati, D., Mannara, A., Nicosia, G., Paolucci, G. M., Tessariol, P., Lacaita, A. L., Spinelli, A. S., Compagnoni, C. Monzio

“…In this work, we present the first statistical analysis of the temperature activation of the string current in vertical-channel NAND Flash arrays. To this aim,…”
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Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND flash cells by Nicosia, G., Mannara, A., Resnati, D., Paolucci, G. M., Tessariol, P., Lacaita, A. L., Spinelli, A. S., Goda, A., Compagnoni, C. Monzio

“…In this work, we present a comprehensive analysis of the impact of temperature on the amplitude of random telegraph noise (RTN) fluctuations in 3-Dimensional…”
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Investigation of Cycling-Induced VT Instabilities in NAND Flash Cells via Compact Modeling by Paolucci, G. M., Miccoli, C., Compagnoni, C. M., Crespi, L., Spinelli, A. S., Lacaita, A. L.

“…Cycling-induced threshold-voltage instabilities in NAND Flash memory arrays are investigated via compact modeling of the NAND string. Calibration against…”
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