Search Results - "Pantzas, K."

Experimental quantification of atomically-resolved HAADF-STEM images using EDX by Pantzas, K., Patriarche, G.

“…•Atomically-resolved quantitative chemical mappings obtained experimentally from HAADF-STEM and EDX.•The mappings reveal that interfaces are not continuously…”
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Time localized tilted beams in nearly-degenerate laser cavities by Bartolo, A., Vigne, N., Marconi, M., Beaudoin, G., Pantzas, K., Sagnes, I., Garnache, A., Giudici, M.

“…We show that nearly-degenerate Vertical External-Cavity Surface-Emitting Lasers may emit a set of tilted beams of individually addressable mode-locked pulses…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog by Pantzas, K., Fournel, F., Talneau, A., Patriarche, G., Le Bourhis, E.

“…Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared…”
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Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy by Fourreau, Y., Pantzas, K., Patriarche, G., Destefanis, V.

“…The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin…”
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Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure by Pateras, A. I., Allain, M., Godard, P., Largeau, L., Patriarche, G., Talneau, A., Pantzas, K., Burghammer, M., Minkevich, A. A., Chamard, V.

“…We report the 3D mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample…”
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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates by Sundaram, S., El Gmili, Y., Puybaret, R., Li, X., Bonanno, P. L., Pantzas, K., Patriarche, G., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

“…We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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Deep structural analysis of novel BGaN material layers grown by MOVPE by Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A.

“…BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated…”
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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE by Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

“…AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells by Gorge, V., Migan-Dubois, A., Djebbour, Z., Pantzas, K., Gautier, S., Moudakir, T., Suresh, S., Ougazzaden, A.

“…► We have modeled a p–i–n InGaN-based solar cell with gradual bandgap layers. ► InGaN defects have been modeled by two band tails and one localized energy…”
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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO by Pantzas, K., Rogers, D.J., Bove, P., Sandana, V.E., Teherani, F.H., El Gmili, Y., Molinari, M., Patriarche, G., Largeau, L., Mauguin, O., Suresh, S., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry…”
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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials by Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L., Ougazzaden, A.

“…In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a…”
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire by Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a…”
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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content by Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A.

“…BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy…”
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Spatial Multiplexing of Temporal Localized Structures in Degenerate Optical Cavities by Bartolo, A., Vigne, N., Marconi, M., Beaudoin, G., Pantzas, K., Sagnes, I., Garnache, A., Giudici, M.

“…Temporal localized structures (TLS) are individually addressable pulses circulating in an optical cavity [1]. Their existence is related to the presence of a…”
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Spatially Localized Structures in a Self-Imaging Semiconductor Laser Cavity: Diffraction and Complex Non-linearity Management by Vigne, N., Bartolo, A., Marconi, M., Beaudoin, G., Pantzas, K., Javaloyes, J., Gurevich, S. V., Sagnes, I., Giudici, M., Garnache, A.

“…In recent years, degenerate laser cavities have gathered attention for their versatility in the transverse structuration of laser emission [1], [2]. In…”
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Excitability in a PhC Nanolaser with an Integrated Saturable Absorber by Delmulle, M., Garbin, B., Massaro, L. M., Bazin, A., Sagnes, I., Pantzas, K., Combrie, S., De Rossi, A., Raineri, F.

“…Although machine learning (ML) algorithms are already applied in many fields (e.g. language recognition, temporal series prediction) using software computed on…”
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