Search Results - "Panteleev, V. N."

Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy by Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

“…Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon…”
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A New Method for Production of the Sr-82 Generator Radionuclide and Other Medical Radionuclides by Panteleev, V. N., Barzakh, A. E., Batist, L. Kh, Fedorov, D. V., Ivanov, V. S., Krotov, S. A., Molkanov, P. L., Orlov, S. Yu, Seliverstov, M. D., Volkov, Yu. M.

“…A cyclotron (C-80) designed to produce protons with an energy of 40–80 MeV and beam intensity of 100–200 μA has been launched at the Petersburg Nuclear Physics…”
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Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity by Bessolov, V. N., Konenkova, E. V., Konenkov, S. D., Panteleev, V. N.

“…A study is performed of the advantages of synthesizing layers of AlN via gas-phase chloride epitaxy and layers of GaN via organometallic epitaxy on a…”
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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N., Konenkova, E. V., Seredova, N. V., Panteleev, V. N., Scheglov, M. E.

“…We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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Producing gold at ISOLDE-CERN by Barzakh, A.E., Andreyev, A.N., Atanasov, D., Cubiss, J.G., Harding, R.D., Al Monthery, M., Althubiti, N.A., Andel, B., Antalic, S., Ballof, J., Blaum, K., Cocolios, T.E., Van Duppen, P., Day Goodacre, T., de Roubin, A., Duchemin, C., Farooq-Smith, G.J., Fedorov, D.V., Fedosseev, V.N., Fink, D.A., Gaffney, L.P., Ghys, L., Huyse, M., Imai, N., Johnson, J., Kreim, S., Lunney, D., Lynch, K.M., Manea, V., Marsh, B.A., Martinez Palenzuela, Y., Molkanov, P.L., Neidherr, D., Panteleev, V.N., Rosenbusch, M., Rossel, R.E., Rothe, S., Schweikhard, L., Seliverstov, M.D., Sels, S., Van Beveren, C., Verstraelen, E., Welker, A., Wienholtz, F., Wolf, R.N., Zuber, K.

“…The yield of 18 ion beams of radioactive gold nuclei produced in the thick uranium target at ISOLDE (CERN) by 1.4-GeV protons was measured. The…”
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Hydride Vapor-Phase Epitaxy of a Semipolar AlN(102) Layer on a Nanostructured Si(100) Substrate by Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N.

“…We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped…”
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Comparative Study of Conventional and Quasi-Freestanding Epitaxial Graphenes Grown on 4H-SiC Substrate by Lebedev, S. P., Eliseyev, I. A., Panteleev, V. N., Dementev, P. A., Shnitov, V. V., Rabchinskii, M. K., Smirnov, D. A., Zubov, A. V., Lebedev, A. A.

“…The structural and some other characteristics of quasi-freestanding single-layer graphene obtained by annealing of the buffer layer in the flow of hydrogen are…”
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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate by Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

“…Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 1) on a V -shaped nanostructured Si(100) substrate with…”
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The radioisotope complex project "RIC-80" at the Petersburg Nuclear Physics Institute by Panteleev, V N, Barzakh, A E, Batist, L Kh, Fedorov, D V, Ivanov, V S, Moroz, F V, Molkanov, P L, Orlov, S Yu, Volkov, Yu M

“…The high current cyclotron C-80 capable of producing 40-80 MeV proton beams with a current of up to 200 μA has been constructed at Petersburg Nuclear Physics…”
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Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering by Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

“…Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron…”
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Local thermoelectric effects in wide-gap semiconductors by Ordin, S. V., Zhilyaev, Yu. V., Zelenin, V. V., Panteleev, V. N.

“…Experimental confirmation of the appearance of local thermal electromotive forces, which were previously found in structures based on silicon p–n junctions, is…”
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Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate by Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

“…We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy…”
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Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates by Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.

“…The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is…”
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Application of titanium-containing sorbents for treating liquid radioactive waste with the subsequent conservation of radionuclides in Synroc-type titanate ceramics by Britvin, S. N., Gerasimova, L. G., Ivanyuk, G. Yu, Kalashnikova, G. O., Krzhizhanovskaya, M. G., Krivovivhev, S. V., Mararitsa, V. F., Nikolaev, A. I., Oginova, O. A., Panteleev, V. N., Khandobin, V. A., Yakovenchuk, V. N., Yanicheva, N. Yu

“…New nanocrystalline titanium-containing sorbents, namely, layered hydrazinium titanate LHT -9, (N 2 H 5 ) 0.5 Ti 1.87 O 4 and synthetic ivanyukite-Na Na 2 K[Ti…”
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Changes in the mean-square charge radii and magnetic moments of neutron-deficient Tl isotopes by Barzakh, A. E., Batist, L. Kh, Fedorov, D. V., Ivanov, V. S., Mezilev, K. A., Molkanov, P. L., Moroz, F. V., Orlov, S. Yu, Panteleev, V. N., Volkov, Yu. M.

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A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect by Ivanov, P. A., Samsonova, T. P., Panteleev, V. N., Polyakov, D. Yu

“…The nonequilibrium field effect associated with deep surface states at the SiO2/6H-SiC interface has been observed and studied in a 6H-SiC MOSFET of…”
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Target-ion source unit ionization efficiency measurement by a method of stable ion beam implantation by Panteleev, V. N., Barzakh, A. E., Fedorov, D. V., Molkanov, P. L., Moroz, F. V., Orlov, S. Yu, Volkov, Yu. M.

“…At the IRIS facility a rather precise method of the target-ion source unit ionization efficiency measurement has been developed. The method exploits an…”
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Plastic Relaxation of Stressed Semipolar AlN() Layer Synthesized on a Nanopatterned Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.

“…Plastic relaxation of a stressed semipolar AlN( ) layer synthesized on a nanopatterned Si(100) substrate has been investigated using scanning electron…”
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Plastic Relaxation of Stressed Semipolar AlN Substrate by Bessolov, V. N, Konenkova, E. V, Panteleev, V. N

“…Plastic relaxation of a stressed semipolar AlN( [Formula omitted]) layer synthesized on a nanopatterned Si(100) substrate has been investigated using scanning…”
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Anisotropic Stresses in GaN Layers on an r-Al.sub.2O.sub.3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N, Konenkova, E. V, Seredova, N. V, Panteleev, V. N, Scheglov, M. E

“…We report on the fabrication of nonpolar GaN(11â20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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