Search Results - "Panneerselvam, Murugapandiyan"

Ultra‐wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications by Natarajan, Ramkumar, Parthasarathy, Eswaran, Murugapandiyan, Panneerselvam

“…This article reports the performance analysis of gate field plate AlGaN dual channel high electron mobility transistor (HEMT). The proposed…”
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Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) by Subramanian, Baskaran, Anandan, Mohanbabu, Veerappan, Saminathan, Panneerselvam, Murugapandiyan, Wasim, Mohammed, Radhakrishnan, Saravana Kumar, Pechimuthu, Praveen, Verma, Yogesh Kumar, Vivekanandhan, Subash Navaneethan, Raju, Elamurugan

“…This paper presents a systematic study of Al 0.23 Ga 0.77 N/GaN/Al x Ga 1− x N double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a…”
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Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications by Natarajan, Ramkumar, Parthasarathy, Eswaran, Murugapandiyan, Panneerselvam

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