Search Results - "Pangrac, J"

Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures by Hubáček, T., Hospodková, A., Oswald, J., Kuldová, K., Pangrác, J.

“…We have optimized technology of GaN buffer layer growth with respect to the application in fast scintillation structures. The deep defect luminescence so…”
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Improvement of luminescence properties of n-GaN using TEGa precursor by Hubáček, T., Hospodková, A., Kuldová, K., Slavická Zíková, M., Pangrác, J., Čížek, J., Liedke, M.O., Butterilng, M., Wagner, A., Hubík, P., Hulicius, E.

“…•Growth from TEGa precursor improved luminescence and structural properties of n-GaN.•Type of carrier gas significantly influences properties of…”
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Impact of Ge doping on MOVPE grown InGaN layers by Hubáček, T., Kuldová, K., Gedeonová, Z., Hájek, F., Košutová, T., Banerjee, S., Hubík, P., Pangrác, J., Vaněk, T., Hospodková, A.

“…•InGaN:Ge layer with 8 % of In and 1020 cm−3 free carriers concentration was grown.•Decrease in GeH4 flow resulted in a higher In content of InGaN layers.•Ge…”
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Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells by Hájek, F., Hospodková, A., Hubáček, T., Oswald, J., Pangrác, J., Dominec, F., Horešovský, R., Kuldová, K.

“…Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor…”
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Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties by Zíková, M., Hospodková, A., Pangrác, J., Hubáček, T., Oswald, J., Kuldová, K., Hájek, F., Ledoux, G., Dujardin, C.

“…•n-type doping of the buffer layer enhances the light emission of InGaN/GaN MQWs.•The luminescence enhancement is dominantly caused by the band structure…”
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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures by Hospodková, A., Hájek, F., Pangrác, J., Slavická Zíková, M., Hubáček, T., Kuldová, K., Oswald, J., Vaněk, T., Vetushka, A., Čížek, J., Liedke, M.O., Butterling, M., Wagner, A.

“…•Alternative explanation of non-radiative recombination in deepest QWs is suggested.•Non-radiative recombination is caused by VGa-nH complexes in InGaN…”
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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface by Hubáček, T., Hospodková, A., Oswald, J., Kuldová, K., Pangrác, J., Zíková, M., Hájek, F., Dominec, F., Florini, N., Komninou, Ph, Ledoux, G., Dujardin, C.

“…•Desorption of In was suppressed by eliminating growth interruption after QW growth.•The In content in InGaN QWs increased three times by this method.•QW PL…”
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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy by Hospodková, A., Hulicius, E., Pangrác, J., Dominec, F., Mikhailova, M.P., Veinger, A.I., Kochman, I.V.

“…Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells based on the broken-gap heterojunctions have…”
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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field by Mikhailova, M. P., Berezovets, V. A., Parfeniev, R. V., Danilov, L. V., Safonchik, M. O., Hospodková, A., Pangrác, J., Hulicius, E.

“…Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an n -InAs (100) substrate is…”
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Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures by Hospodková, A., Oswald, J., Pangrác, J., Kuldová, K., Zíková, M., Vyskočil, J., Hulicius, E.

“…This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and…”
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Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs by Hazdra, P., Oswald, J., Hospodková, A., Hulicius, E., Pangrác, J.

“…Luminescence properties of metalorganic vapor phase epitaxy grown light emitting diodes (LEDs) with active InAs/GaAs quantum dot (QD) layer covered by GaAsSb…”
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Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots by Hospodková, A., Zíková, M., Pangrác, J., Oswald, J., Kuldová, K., Vyskočil, J., Hulicius, E.

“…We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with…”
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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates by Komninou, Ph, Gladkov, P., Karakostas, Th, Pangrác, J., Pacherová, O., Vaniš, J., Hulicius, E.

“…Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the ~7% lattice mismatch on the InAs layer…”
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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy by Hospodková, A., Vyskočil, J., Pangrác, J., Oswald, J., Hulicius, E., Kuldová, K.

“…The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for…”
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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates by Dimitrakopulos, G.P., Bazioti, C., Grym, J., Gladkov, P., Hulicius, E., Pangrác, J., Pacherová, O., Komninou, Ph

“…•InxGa1−xAs epilayers were grown by MOVPE on porous GaAs substrates.•The porous substrates led to significant reduction of misfit dislocation…”
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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots by Hospodková, A., Hulicius, E., Pangrác, J., Oswald, J., Vyskočil, J., Kuldová, K., Šimeček, T., Hazdra, P., Caha, O.

“…We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy…”
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Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state by Walachová, J., Zelinka, J., Leshkov, S., Šroubek, F., Pangrác, J., Hulicius, E., Vaniš, J.

“…Density of states is studied by a ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs…”
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Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures by Hospodková, A., Pangrác, J., Oswald, J., Hazdra, P., Kuldová, K., Vyskočil, J., Hulicius, E.

“…We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple…”
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Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs by Hospodková, A., Hulicius, E., Oswald, J., Pangrác, J., Mates, T., Kuldová, K., Melichar, K., Šimeček, T.

“…The effects of covering InAs quantum dot (QD) layer by In x Ga 1− x As thin strain-reducing layer (SRL) on QD properties were studied by photoluminescence (PL)…”
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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime by Hospodková, A., Pangrác, J., Vyskočil, J., Oswald, J., Vetushka, A., Caha, O., Hazdra, P., Kuldová, K., Hulicius, E.

“…InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group…”
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