Properties of Reactive Argon Plasmas at Atmospheric Pressure
Summary form only given. A new atmospheric pressure plasma source has been developed that shows exceedingly high processing rates. For example, kapton films have been etched at 5.0 mum/s using an argon and oxygen discharge with 6.0 vol.% O 2 and a temperature of 280degC. The plasma source consisted...
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| Published in: | IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science p. 264 |
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| Main Authors: | , , , , |
| Format: | Conference Proceeding |
| Language: | English |
| Published: |
IEEE
01-06-2005
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Summary form only given. A new atmospheric pressure plasma source has been developed that shows exceedingly high processing rates. For example, kapton films have been etched at 5.0 mum/s using an argon and oxygen discharge with 6.0 vol.% O 2 and a temperature of 280degC. The plasma source consisted of a small quartz tube that was capacitively coupled to radio frequency power at 13.56 MHz. The input plasma power could be increased up to 150 W/cm 3 without arcing, or forming a streamer like discharge. At this power density, the gas temperature was determined by spectroscopic methods to be 300plusmn30degC. The O atom concentration was measured in the plasma afterglow by nitric oxide titration, and was found to be 1.2plusmn0.6times10 17 cm -3 at 150 W/cm 3 and 6.0 vol.% O 2 in Ar. The concentration of ozone in the downstream region equaled 4.3plusmn0.5times10 14 cm -3 , as determined by UV absorption spectroscopy. These results were found to be in good agreement with a numerical model of the plasma and afterglow that included the reaction mechanism and the plasma electron density and temperature as calculated from current-voltage measurements |
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| ISBN: | 0780393007 9780780393004 |
| ISSN: | 0730-9244 2576-7208 |
| DOI: | 10.1109/PLASMA.2005.359349 |