Search Results - "Panda, Sangita R."

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  1. 1

    Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure by Mohapatra, Meryleen, Sahu, Arttatran, Panda, Sangita R., Das, Sudhakar, Sahu, Trinath, Panda, Ajit K.

    Published in Japanese Journal of Applied Physics (01-06-2017)
    “…We analyze the structural-asymmetry-induced nonlinear enhancement of the electron mobility μ in a GaAs/InxGa1−xAs double-quantum-well pseudomorphic…”
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    Journal Article
  2. 2

    Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure by Panda, Sangita R, Pradhan, Manoranjan, Sahu, Trinath, Panda, Ajit Kumar

    Published in Physica scripta (01-12-2023)
    “…We study the effect of asymmetric doping concentrations on the electron mobility μ in GaAs/InGaAs-based single quantum well (SQW) as well as double quantum…”
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    Journal Article
  3. 3

    Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors by Panda, Sangita R, Pradhan, Manoranjan, Sahu, Trinath, Panda, Ajit Kumar

    Published in Physica scripta (01-11-2022)
    “…Nonmonotonic electron mobility is obtained in In x Ga 1-x As/GaAs double quantum well pseudomorphic heterostructure field effect transistor by changing the…”
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    Journal Article
  4. 4
  5. 5

    Asymmetric Doping‐Dependent Electron Transport Mobility in In x Ga 1– x As/GaAs Quantum Well Field‐Effect Transistor Structure by Panda, Sangita R., Pradhan, Manoranjan, Mallik, Sandipan, Sahu, Trinath

    Published in physica status solidi (b) (28-07-2024)
    “…We analyze the asymmetric doping‐dependent electron mobility μ of GaAs/InGaAs/GaAs quantum well field‐effect transistor (QWFET) structure. We consider doping…”
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    Journal Article
  6. 6

    Intersubband effects on electron mobility in GaAs/ InxGa1-xAs Quantum well FET with asymmetric doping profiles by Panda, Sangita R., Pradhan, Manoranjan, Sahu, Trinath, Panda, Ajit Kumar

    “…Authors analyze electron mobility, \mu by taking asymmetric doping concentrations, varying nd1 in the substrate barrier and keeping nd 2 constant in the…”
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    Conference Proceeding
  7. 7

    Structural Asymmetry related Nonlinear Mobility of Electron in InxGa1-xAs/GaAs Quantum well FET by Panda, Sangita R., Pradhan, Manoranjan, Sahu, Trinath, Panda, Ajit Kumar

    “…Nonlinear characteristics in the mobility µ of electrons in In x Ga 1-x As/GaAs pseudomorphic quantum well FET structure is studied. We vary the doping…”
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    Conference Proceeding
  8. 8

    Analysing Structural Asymmetry on the Nonmonotonic Electron Mobility of Pseudomorphic Heterojunction Field Effect Transistors by Panda, Sangita R., Sahu, Trinath, Panda, Ajit Kumar

    “…Nonlinearity in the mobility of electron can be determined in a GaAs/InxGa1-xAs double quantum well pseudomorphic Heterojunction Field Effect Transistor via…”
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    Conference Proceeding
  9. 9

    Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure by Panda, Sangita R., Das, Sudhakar, Sahu, Arttatran, Panda, Ajit Kumar, Sahu, Trinath

    “…Non-monotonic mobility \mu of electrons is obtained in a pseudomorphic GaAs/In x Ga 1-x As high electron mobility transistor having a double quantum well…”
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    Conference Proceeding