Search Results - "Pancharatnam, S."

Study of TiN and TaN Underlayer Properties and Their Influence on W Growth by Pancharatnam, S., Rodriguez, G., Wang, W., Karve, G., Wynne, J., Mendoza, B., DeVries, S., Pujari, R. N., Breton, M., Carr, A., White, L.

“…The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) and tantalum nitride (TaN) underlayer films. The…”
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Manufacturing Yield Improvement for Advanced CMOS Technology Middle-of-Line Interconnect with Cobalt Metallization : YE: YieldEnhancement/Learning by Fan, S.-C., Jamison, P., Pancharatnam, S., Sankarapandian, M., Xie, R., Waskiewicz, C., Strane, J., Lee, J., Shobha, H., Demarest, J., Peethala, C., Jagannathan, H., Wynne, J.

“…Middle of Line (MOL) metallization with cobalt has been very promising to reduce the parasitic resistance of advanced CMOS devices. Though significant line…”
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Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies by Bao, R., Watanabe, K., Zhang, J., Zhou, H., Sankarapandian, M., Li, J., Pancharatnam, S., Jamison, P., Southwick, R. G, Wang, M., Demarest, J. J, Guo, J., Loubet, N., Basker, V., Guo, D., Narayanan, V., Haran, B., Bu, H., Khare, M.

“…We report that n-dipole and p-dipole (dual dipoles) can be co-integrated to provide a more flexible volumeless multiple threshold voltage(multi-Vt) solution in…”
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A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices by Loubet, N., Kal, S., Alix, C., Pancharatnam, S., Zhou, H., Durfee, C., Belyansky, M., Haller, N., Watanabe, K., Devarajan, T., Zhang, J., Miao, X., Sankar, M., Breton, M., Chao, R., Greene, A., Yu, L., Frougier, J., Chanemougame, D., Tapily, K., Smith, J., Basker, V., Mosden, A., Biolsi, P., Hurd, T. Q., Divakaruni, R., Haran, B., Bu, H.

“…In this paper, we demonstrate a first of a kind SiGe dry etch technique for the formation of inner spacers and for channel release, enabling stacked NanoSheet…”
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Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications by Zhang, J., Frougier, J., Greene, A., Miao, X., Yu, L., Vega, R., Montanini, P., Durfee, C., Gaul, A., Pancharatnam, S., Adams, C., Wu, H., Zhou, H., Shen, T., Xie, R., Sankarapandian, M., Wang, J., Watanabe, K., Bao, R., Liu, X., Park, C., Shobha, H., Joseph, P., Kong, D., De La Pena, A. Arceo, Li, J., Conti, R., Dechene, D., Loubet, N., Chao, R., Yamashita, T., Robison, R., Basker, V., Zhao, K., Guo, D., Haran, B., Divakaruni, R., Bu, H.

“…In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally stacked Nanosheet device structures with Lmetal 12 nm. The…”
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Tungsten and cobalt metallization: A material study for MOL local interconnects by Kamineni, V., Raymond, M., Siddiqui, S., Mont, F., Tsai, S., Niu, C., Labonte, A., Labelle, C., Fan, S., Peethala, B., Adusumilli, P., Patlolla, R., Priyadarshini, D., Mignot, Y., Carr, A., Pancharatnam, S., Shearer, J., Surisetty, C., Arnold, J., Canaperi, D., Haran, B., Jagannathan, H., Chafik, F., L'Herron, B.

“…Middle-of-the-line (MOL) interconnect and contact resistances represent significant impacts to high-end IC performance at ≤ 10 nm nodes. CVD W-based…”
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Critical Elements for Next Generation High Performance Computing Nanosheet Technology by Bao, R., Durfee, C., Zhang, J., Qin, L., Rozen, J., Zhou, H., Li, J., Mukesh, S., Pancharatnam, S., Zhao, K., Adams, C. D., Leobandung, E., Narayanan, V., Guo, D., Bu, H.

“…We evaluate the feasibility of several critical elements for the next generation high performance computing (HPC) Nanosheet (NS) technology. A simple NS pFET…”
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Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications by Bao, R., Watanabe, K., Zhang, J., Guo, J., Zhou, H., Gaul, A., Sankarapandian, M., Li, J., Hubbard, A. R., Vega, R., Pancharatnam, S., Jamison, P., Wang, M., Loubet, N., Basker, V., Dechene, D., Guo, D., Haran, B., Bu, H., Khare, M.

“…In Nanosheet (NS) device architecture, it is much more challenging than FinFET to develop a suitable multiple threshold voltage (multi-Vt) integration with…”
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MODULATED BIREFRINGENCE by PANCHARATNAM, S.

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Generalized theory of interference, and its applications by Pancharatnam, S.

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Human diphyllobothriasis: first report from India by Pancharatnam, S., Jacob, E., Kang, G.

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On the magnetic resonance of an alined spin-assembly by Pancharatnam, S.

“…The state of a spin-assembly of arbitrary J, undergoing magnetic resonance, is characterized by the multipole components pqk of the instantaneous…”
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Theory of dispersion in relation to light shifts by Pancharatnam, S.

“…A quantum mechanical system consisting of one photon interacting with N atoms not far from resonance is considered and an (approximately) stationary solution…”
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Transient Behavior of a Solar Pond Through Fourier Analysis by Pancharatnam, S

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The ellipsoid of alinement and its precessional motion in magnetic resonance by Pancharatnam, S., Series, George William

“…A surface of the second degree is constructed from the five components of the second rank tensor which describes the alinement of a spin-assembly undergoing…”
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Transient Behavior of a Solar Pond and Prediction of Evaporation Rates by Pancharatnam, S

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THE ACOUSTICS OF CONCERT HALLS THROUGH A SUBJECTIVE EVALUATION by Pancharatnam, Satya, Ramachandraiah, A.

“…This study investigated the subjective response of regular concert-goers to the acoustics of concert halls for South Indian classical music through a…”
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A Comparative Study of the Acoustical Characteristics of two Indian Concert Halls by Pancharatnam, Satya, Ramachandraiah, A

“…This paper discusses the architecture and acoustics of two of the best concert halls studied by the authors for South Indian Classical music in Chennai,…”
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COHERENCE PROPERTIES OF ELECTROMAGNETIC RADIATION: PART II by PANCHARATNAM, S.

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COHERENCE PROPERTIES OF ELECTROMAGNETIC RADIATION: PART I by PANCHARATNAM, S.

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