Search Results - "Panasci, Salvatore E."

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    Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions by Giannazzo, Filippo, Panasci, Salvatore E., Schilirò, Emanuela, Roccaforte, Fabrizio, Koos, Antal, Nemeth, Miklos, Pécz, Béla

    Published in Advanced materials interfaces (01-08-2022)
    “…The heterogeneous integration with 2D materials enables new functionalities and novel devices in state‐of‐the‐art bulk (3D) semiconductors. In this work,…”
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    Journal Article
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    Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate by Schilirò, Emanuela, Nigro, Raffaella Lo, Panasci, Salvatore E., Agnello, Simonpietro, Cannas, Marco, Gelardi, Franco M., Roccaforte, Fabrizio, Giannazzo, Filippo

    Published in Advanced materials interfaces (01-11-2021)
    “…In this paper, the authors demonstrate the atomic layer deposition (ALD) of highly homogeneous and ultrathin (≈3.6 nm) Al2O3 films with very good insulating…”
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    Journal Article
  4. 4

    Esaki Diode Behavior in Highly Uniform MoS 2 /Silicon Carbide Heterojunctions by Giannazzo, Filippo, Panasci, Salvatore E., Schilirò, Emanuela, Roccaforte, Fabrizio, Koos, Antal, Nemeth, Miklos, Pécz, Béla

    Published in Advanced materials interfaces (01-08-2022)
    “…Abstract The heterogeneous integration with 2D materials enables new functionalities and novel devices in state‐of‐the‐art bulk (3D) semiconductors. In this…”
    Get full text
    Journal Article
  5. 5

    Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS 2 Exfoliated on Gold: The Role of the Substrate by Schilirò, Emanuela, Nigro, Raffaella Lo, Panasci, Salvatore E., Agnello, Simonpietro, Cannas, Marco, Gelardi, Franco M., Roccaforte, Fabrizio, Giannazzo, Filippo

    Published in Advanced materials interfaces (01-11-2021)
    “…Abstract In this paper, the authors demonstrate the atomic layer deposition (ALD) of highly homogeneous and ultrathin (≈3.6 nm) Al 2 O 3 films with very good…”
    Get full text
    Journal Article
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    Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate by Schilirò, Emanuela, Nigro, Raffaella Lo, Panasci, Salvatore E, Agnello, Simonpietro, Cannas, Marco, Gelardi, Franco M, Roccaforte, Fabrizio, Giannazzo, Filippo

    Published 21-08-2021
    “…In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$…”
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    Journal Article