Search Results - "Pan, Yuanchun"

Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge2Sb2Te5 phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

“…Ge 2 Sb 2 Te 5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently…”
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Lattice Thermal Conductivity of mGeTe•nSb2Te3 Phase-Change Materials: A First-Principles Study by Pan, Yuanchun, Li, Zhen, Guo, Zhonglu

“…As the most promising materials for phase-change data storage, the pseudobinary mGeTe•nSb2Te3 (GST) chalcogenides have been widely investigated. Nevertheless,…”
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Being a provider or a reseller? The design strategies of extended warranties for competing retailers by Jianhua, Ma, Xingzheng, Ai, Yuanchun, Pan, Wen, Yang, Chi, Zhang

“…This paper investigates how competing retailers design their extended warranties to gain more profits. The two retailers are involved in a Cournot competition…”
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Flexible Magnetoelectric Nanomaterials for Healthcare Devices: A Minireview by Liang, Wenxuan, Li, Yuhan, Pan, Yuanchun, Zhang, Jinxing, Liu, Nan

“…Magnetoelectric (ME) nanomaterials are materials that generate an electric field under an applied DC or AC magnetic field. Their unique ability for this ME…”
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Origin of p-type conductivity in layered nGeTe center dot mSb(2)Te(3) chalcogenide semiconductors by Sun, Zhimei, Pan, Yuanchun, Zhou, Jian, Sa, Baisheng, Ahuja, Rajeev

“…Ge2Sb2Te5, an extensively studied narrow-band-gap semiconductor for phase-change memories, always displays p-type conductivity. However, the defect physics and…”
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A Stretchable and Sweat-Adhesive 3D Graphene Eutectogel Electrode for EMG Monitoring by Pan, Yuanchun, Cui, Xiangyu, Song, Dekui, Hu, Wenya, Lin, Xinyun, Liu, Nan

“…Epidermal electrodes play an essential role in accurately capturing electrophysiological signals, which are critical for human health monitoring and…”
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Structural stability and thermoelectric property optimization of Ca2Si by Xiong, Rui, Sa, Baisheng, Miao, Naihua, Li, Yan-Ling, Zhou, Jian, Pan, Yuanchun, Wen, Cuilian, Wu, Bo, Sun, Zhimei

“…By using an ab initio evolutionary algorithm structure search, low enthalpy criterion as well as stability analysis, we have found that cubic Fm 3&cmb.macr; m…”
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Structural stability and thermoelectric property optimization of Ca 2 Si by Xiong, Rui, Sa, Baisheng, Miao, Naihua, Li, Yan-Ling, Zhou, Jian, Pan, Yuanchun, Wen, Cuilian, Wu, Bo, Sun, Zhimei

“…By using an ab initio evolutionary algorithm structure search, low enthalpy criterion as well as stability analysis, we have found that cubic Fm 3̄ m Ca 2 Si…”
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Ab initio study of antisite defective layered Ge2Sb2Te5 by Zhou, Jian, Sun, Zhimei, Pan, Yuanchun, Song, Zhitang, Ahuja, Rajeev

“…► The antisite defects in layered Ge2Sb2Te5 have been investigated by ab initio calculations. ► Our results show that both TeSb and SbTe antisite defective GST…”
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Ab initio study of antisite defective layered Ge 2 Sb 2 Te 5 by Zhou, Jian, Sun, Zhimei, Pan, Yuanchun, Song, Zhitang, Ahuja, Rajeev

“…By means of ab initio calculations, we have investigated the antisite defects in layered Ge 2 Sb 2 Te 5 (GST). Our results show that both Te Sb and Sb Te…”
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Pressure-induced reversible amorphization and an amorphous—amorphous transition in Ge2Sb2Te5phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

“…Ge2Sb2Te5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied…”
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Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge^sub 2^Sb^sub 2^Te^sub 5^ phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

“… (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for…”
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Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge 2 Sb 2 Te 5 phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

“…Ge 2 Sb 2 Te 5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently…”
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Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material by Sun, Zhimei, Zhou, Jian, Pan, Yuanchun, Song, Zhitang, Mao, Ho-Kwang, Ahuja, Rajeev

“…Ge₂Sb₂Te₅ (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently…”
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Origin of p -type conductivity in layered n GeTe · m Sb 2 Te 3 chalcogenide semiconductors by Sun, Zhimei, Pan, Yuanchun, Zhou, Jian, Sa, Baisheng, Ahuja, Rajeev

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