Search Results - "Pan, R.K."
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Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell
Published in Thin solid films (30-03-2012)“…The 80-nm-thickness BaTiO3 (BT) thin film was prepared on the Pt/Ti/SiO2/Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO2/Si…”
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Rectifying behavior and transport mechanisms of currents in Pt/BaTiO3/Nb:SrTiO3 structure
Published in Journal of alloys and compounds (05-04-2012)“…► Pt/BaTiO3/Nb:SrTiO3 structure shows backward diode-like rectifying behavior. ► The reverse currents were fitted by the P–F emission and F–N tunneling…”
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3
Structure and optical properties of amorphous GeSx films prepared by PLD
Published in Journal of non-crystalline solids (01-06-2011)“…Amorphous GeSx (x=2, 4, 6) films were prepared by the pulsed laser deposition (PLD) technique. The optical band gaps (E g opt ) and refractive indices of the…”
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Conference Proceeding Journal Article -
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Annealing effects on the structure and optical properties of GeSe2 and GeSe4 films prepared by PLD
Published in Journal of alloys and compounds (18-09-2009)Get full text
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Structure and optical properties of amorphous Ge–Se films prepared by pulsed laser deposition
Published in Optik (Stuttgart) (01-11-2013)“…Amorphous GeSex (x=2, 4, 6) films were prepared by pulsed laser deposition technique. The optical band gaps (Egopt) and refractive indices of the films were…”
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Annealing effects on the structure and optical properties of GeSe 2 and GeSe 4 films prepared by PLD
Published in Journal of alloys and compounds (2009)“…Amorphous thin films of GeSe 2 and GeSe 4 were prepared by the pulsed laser deposition (PLD) technique. Refractive index, thickness and optical band gap ( E g…”
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7
Structure and optical properties of amorphous GeS x films prepared by PLD
Published in Journal of non-crystalline solids (2011)“…Amorphous GeS x (x = 2, 4, 6) films were prepared by the pulsed laser deposition (PLD) technique. The optical band gaps ( E g opt ) and refractive indices of…”
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Journal Article -
8
Thermal-induced gradually changes in the optical properties of amorphous GeSe 2 film prepared by PLD
Published in Physica. B, Condensed matter (2009)“…Amorphous GeSe 2 film was prepared by the pulsed laser deposition technique and annealed at different temperature from 473 to 623 K. Using the ‘non-direct…”
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Thermal-induced gradually changes in the optical properties of amorphous GeSe2 film prepared by PLD
Published in Physica. B, Condensed matter (01-11-2009)Get full text
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On the optical properties of amorphous Ge–Ga–Se–KBr films prepared by pulsed laser deposition
Published in Applied surface science (15-03-2009)“…Amorphous thin films (1 − x)(4GeSe 2–Ga 2Se 3)– xKBr ( x = 0, 0.1, 0.2, 0.3) were prepared by the pulsed laser deposition (PLD) technique. The optical…”
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Optical properties of RF magnetron sputtered Ba 0.65Sr 0.35TiO 3 thin films
Published in Ceramics international (2007)“…Ba 0.65Sr 0.35TiO 3 thin films have been prepared by radio frequency (RF) magnetron sputtering on fused quartz at different substrate temperatures. Optical…”
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Optical properties of RF magnetron sputtered Ba0.65Sr0.35TiO3 thin films
Published in Ceramics international (01-07-2007)“…Ba0.65Sr0.35TiO3 (BST) thin films were prepared by radio frequency magnetron sputtering on fused quartz at different substrate temperatures. Optical constants…”
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