Search Results - "Pan, J.S."

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  1. 1

    Investigation on bonding strength of steel/aluminum clad sheet processed by horizontal twin-roll casting, annealing and cold rolling by Chen, G., Li, J.T., Yu, H.L., Su, L.H., Xu, G.M., Pan, J.S., You, T., Zhang, G., Sun, K.M., He, L.Z.

    Published in Materials & design (15-12-2016)
    “…In this work, a stainless steel/aluminum clad sheet was produced successfully by horizontal twin-roll casting. The interface morphology, element distribution…”
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    Journal Article
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    Growth of single crystalline TaON on yttria-stabilized zirconia (YSZ) by Tao, Junguang, Chai, J.W., Wong, L.M., Zhang, Z., Pan, J.S., Wang, S.J.

    Published in Journal of solid state chemistry (01-08-2013)
    “…Owing to its high stability in aqueous solution and high quantum efficiency, tantalum based oxyntride (TaON) has attracted increasing attentions for…”
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    Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition by Wong, L.M., Chiam, S.Y., Chim, W.K., Pan, J.S., Wang, S.J.

    Published in Thin solid films (31-10-2013)
    “…Highly transparent and conductive aluminum-doped zinc oxide thin films were deposited on low-cost flexible polyethylene terephthalate substrates at room…”
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  4. 4

    The effects of annealing temperature on the sensing properties of low temperature nano-sized SrTiO3 oxygen gas sensor by Hu, Y., Tan, O.K., Pan, J.S., Huang, H., Cao, W.

    Published in Sensors and actuators. B, Chemical (22-07-2005)
    “…A low temperature SrTiO3 oxygen gas sensor was fabricated by high--energy ball milling and conventional screen--printing techniques. The thermal stability,…”
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    Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions by Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Chun, S.R., Liu, Q., Ng, C.M.

    Published in Surface science (01-11-2012)
    “…In this study, we investigate the surface and interfacial reactions involved in the growth of yttrium oxide through the oxidation of yttrium metal on…”
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    A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N) by Wang, Y.H., Moitreyee, M.R., Kumar, R., Shen, L., Zeng, K.Y., Chai, J.W., Pan, J.S.

    Published in Thin solid films (22-07-2004)
    “…New barrier layer, etch stop and hardmask films, including hydrogenated amorphous a-SiC x :H (SiC), a-SiC x O y :H (SiCO), and a-SiC x N y :H (SiCN) films with…”
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    Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics by Pan, J.S., Liu, R.S., Zhang, Z., Poon, S.W., Ong, W.J., Tok, E.S.

    Published in Surface science (15-03-2006)
    “…In situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature…”
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  8. 8

    Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films by Wang, Y.H., Kumar, R., Zhou, X., Pan, J.S., Chai, J.W.

    Published in Thin solid films (01-02-2005)
    “…Low dielectric constant (low k) carbon-doped silicon oxide (CDO) films are obtained by plasma-enhanced chemical vapor deposition. The k value of the…”
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  9. 9

    Improved nitrogen transport in surface nanocrystallized low-carbon steels during gaseous nitridation by Gu, J.F, Bei, D.H, Pan, J.S, Lu, J, Lu, K

    Published in Materials letters (01-08-2002)
    “…In the thermochemical process of low-carbon steel nitridation, improvements of mechanical properties are governed by the nature (hardness, thickness, etc.) of…”
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  10. 10

    Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interface by Mi, Y.Y., Wang, S.J., Dong, Y.F., Chai, J.W., Pan, J.S., Huan, A.C.H., Ong, C.K.

    Published in Surface science (30-12-2005)
    “…Fermi level evolution and Schottky barrier height (SBH) for Ni/MgO(0 0 1) interfaces have been studied using X-ray photoelectron technique. It was found that…”
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    Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications by Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yee-Chia Yeo, Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.

    Published in IEEE electron device letters (01-02-2005)
    “…In this letter, we study Terbium (Tb)-incorporated TaN (TaTb/sub x/N) as a thermally robust N-type metal gate electrode for the first time. The work function…”
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  13. 13

    Oxide-confined vertical-cavity surface-emitting laser pumped Nd:YVO4 microchip lasers by Lan, Y.P., Yung-Fu Chen, Huang, K.F., Lai, H.C., Pan, J.S.

    Published in IEEE photonics technology letters (01-03-2002)
    “…In this letter, we demonstrate an experimental study of using a large area oxide-confined vertical-cavity surface-emitting laser (VCSEL) to pump a Nd:YVO/sub…”
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    The effect of oxidation on the corrosion resistance and mechanical properties of a Zr-based metallic glass by Nie, X.P., Yang, X.H., Chen, L.Y., Yeap, K.B., Zeng, K.Y., Li, D., Pan, J.S., Wang, X.D., Cao, Q.P., Ding, S.Q., Jiang, J.Z.

    Published in Corrosion science (01-11-2011)
    “…After oxidation at 593 K for 5 h, the Zr-based metallic glass exhibits superior passivation behavior in 0.5 M NaCl solutions. The corrosion behavior of BMG in…”
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    Role of surface stoichiometry on the interfacial electron behavior at Ni/TiO2(001) interfaces by Tao, Junguang, Pan, J.S., Chiam, S.Y., Huan, C.H.A.

    Published in Materials chemistry and physics (16-04-2012)
    “…► Surface stoichiometry affects the interfacial charge re-distribution. ► Separation of electron–hole pairs depends on surface stoichiometry. ► Oxidization…”
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    Origin of XPS binding energy shifts in Ni clusters and atoms on rutile TiO2 surfaces by TAO, J. G, PAN, J. S, HUAN, C. H. A, ZHANG, Z, CHAI, J. W, WANG, S. J

    Published in Surface science (15-08-2008)
    “…Cluster-size-dependent binding energy (BE) shifts of Ni 2p3/2 spectra in Ni clusters with respect to bulk Ni metal have been studied as a function of Ni…”
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    XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si by Yan, L., Pan, J.S., Ong, C.K.

    “…Five atomic percentage Co-doped SnO2 (Sn0.95Co0.05O2) thin films have been deposited on (100) Si substrates by pulsed laser deposition. The Sn0.95Co0.05O2 thin…”
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