Search Results - "Pamukchieva, V."

Evaluation of basic physical parameters of quaternary Ge–Sb-(S,Te) chalcogenide glasses by Pamukchieva, V., Szekeres, A., Todorova, K., Fabian, M., Svab, E., Revay, Zs, Szentmiklosi, L.

“…New quaternary chalcogenide Ge x Sb 40− x S 50Te 10 ( x = 10, 20 and 27 at.%) and Ge x Sb 40− x S 55Te 5 ( x = 20 and 27 at.%) glasses have been synthesized…”
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Surface topographic study of chalcogenide thin films of GexSb(As)40−xS50Te10 glasses by Anastasescu, M., Gartner, M., Szekeres, A., Pamukchieva, V.

“…•Results on AFM surface imaging of GexSb(As)40−xS50Te10 films are reported.•The films are continuous, isotropic, considerably smooth and show fractal…”
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Optical properties of GexSb20−xTe80 thin films and their changes by light illumination by Pamukchieva, V., Szekeres, A.

“…The influence of light illumination on the optical constants of chalcogenide thin films with non-stoichiometric GexSb20−xTe80 (x=15,17,19) composition is…”
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Study of As―Se―Te glasses by neutron-, X-ray diffraction and optical spectroscopic methods by Fábián, M., Sváb, E., Pamukchieva, V., Szekeres, A., Petrik, P., Vogel, S., Ruett, U.

“…The atomic structures of amorphous As40Se(60−x)Tex (x=10 and 15) and As40Se60 glasses have been investigated by neutron and high energy X-ray diffraction…”
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Compositional dependence of the optical properties of new quaternary chalcogenide glasses of Ge–Sb–(S,Te) system by Pamukchieva, V., Szekeres, A., Todorova, K., Svab, E., Fabian, M.

“…New quaternary telluride glassy materials with composition of Ge x Sb 40− x S 50Te 10 and Ge x Sb 40− x S 55Te 5 ( x = 10, 20, and 27) have been synthesized…”
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Spectroscopic ellipsometry study of the effect of illumination and thermal annealing on the optical constants of thin Ge–As–S films by Pamukchieva, V, Szekeres, A, Arsova, D

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Photoinduced changes in sulphur rich Ge-As-S thin films by Arsova, D, Vateva, E, Pamukchieva, V

“…The irreversible and reversible photoinduced (PI) changes in thin films of Ge(11.2)As(18)S(70.8)glass (Z = 2.4) have been studied. Glasses with compositions…”
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Study of photo- and thermally-induced changes in Ge-As-S thin films by spectroscopic ellipsometry by Pamukchieva, V, Szekeres, A, Arsova, D

“…The effect of illumination and post-illumination annealing on the optical properties and thicknesses of thin (~ 150 nm) films of Ge(30.8)As(5.7)S(63.5) and…”
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Irreversible and reversible changes in band gap and volume of chalcogenide films by Vateva, E., Arsova, D., Skordeva, E., Pamukchieva, V.

“…Irreversible and reversible changes induced by illumination and/or annealing of thin evaporatively deposited Ge-As-S films at normal incidence are studied…”
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On the structural phase transformations in GexSb40−xSe60 glasses by Ivanova, Z.G., Pamukchieva, V., Vlček, M.

“…A correlation between the observed peculiarities in the variation of some physicochemical parameters of GexSb40-xSe60 (x=10, 20, 25, 27, 32, 35) glasses and…”
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PHOTOINDUCED CHANGES IN Ge-As-S THIN FILMS WITH VARIOUS NETWORK RIGIDITIES by Arsova, D, Skordeva, E, Pamukchieva, V, Vateva, E

“…Photo- and thermally induced changes in the optical bandgap and thickness are investigated in thin films that belong to three lines traced through regions with…”
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Influence of illumination on the microhardness and elastic properties of thin GexSb40-xS60 films by PAMUKCHIEVA, V, SAVOVA, E

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Mechanical stress studies of amorphous GexSb40-xS60 film by CHRISTOVA, K, MANOV, A, PAMUKCHIEVA, V, FITZGERALD, A. G, JIANG, L

“…Mechanical stress in the GexSb40-xS60 film/Si substrate system has been examined before and after film treatment (illumination and/or annealing). The intrinsic…”
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Optical study of GexSb20-xTe80 chalcogenide films by PAMUKCHIEVA, V, SZEKERES, A, TODOROVA, K

“…The optical properties of Ge^sub x^Sb^sub 20-x^Te^sub 80^ films with x values of 15, 17, and 19, lying in the glass-forming region of the Ge-Sb-Te system, have…”
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CHANGES IN THE ELECTRONIC STRUCTURE OF Ge-As-S THIN FILMS AFTER ILLUMINATION by Pamukchieva, V, Skordeva, E, Arsova, D, Guimon, M-F, Gonbeau, D

“…The electronic structure of Ge-As-S glasses and films has been studied by means of X-ray photoelectron spectroscopy (XPS). Several compositions from two lines…”
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X-ray photoelectron spectroscopy studies of thin GexSb40-xS60 chalcogenide films by LIUDI JIANG, FITZGERALD, A. G, ROSE, M. J, CHRISTOVA, K, PAMUKCHIEVA, V

“…Thin GexSb40-xS60 (x=5, 15, 20, 25 and 27) chalcogenide films have been investigated by XPS. XPS spectra show that there is a peculiarity in the relative…”
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Photo- and thermo-induced bandgap and volume changes in Ge-based chalcogenide films by ARSOVA, D, PAMUKCHIEVA, V, VATEVA, E, SKORDEVA, E

“…Irreversible and reversible changes induced by illumination and/or annealing of thin Ge-As-S films are studied. Attention is paid to the volume (thickness)…”
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Mossbauer and XPS structural study of (Ge, Sn)-As-S glasses by Skordeva, E, Pamukchieva, V, Arsova, D, Lippens, P-E, Womes, M, Jumas, J-C, Guimon, M-F, Gonbeau, D

“…The local structure and the electronic properties of three Ge-As-S glasses are studied by 19Sn MOssbauer and X-ray photoelectron spectroscopies. For the former…”
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Compositional dependence of the optical parameters of GexSb40-xSe60 glasses by PAMUKCHIEVA, V, SZEKERES, A, SAVOVA, E, VLAIKOVA, E

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Crystallization kinetics of Ge10Sb30Se60 glass by CERNOSKOVA, E, IVANOVA, Z. G, PAMUKCHIEVA, V

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