Search Results - "Pampillón, María Ángela"

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric by Gao, Zhan, Romero, Maria Fatima, Pampillon, Maria Angela, San Andres, Enrique, Calle, Fernando

“…Thermal stability of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd 2 O 3 is investigated by means of…”
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Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications by Fernández, Susana, Boscá, Alberto, Pedrós, Jorge, Inés, Andrea, Fernández, Montserrat, Arnedo, Israel, González, José Pablo, de la Cruz, Marina, Sanz, David, Molinero, Antonio, Singh Fandan, Rajveer, Pampillón, María Ángela, Calle, Fernando, Gandía, José Javier, Cárabe, Julio, Martínez, Javier

“…New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to…”
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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation by Pampillón, María Ángela, Feijoo, Pedro Carlos, San Andrés, Enrique

“…[Display omitted] •Gd2O3 obtained by high pressure sputtering from Gd target with plasma oxidation on Si.•We have obtained a high k dielectric with good…”
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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors by Wirths, Stephan, Stange, Daniela, Pampillón, Maria-Angela, Tiedemann, Andreas T, Mussler, Gregor, Fox, Alfred, Breuer, Uwe, Baert, Bruno, San Andrés, Enrique, Nguyen, Ngoc D, Hartmann, Jean-Michel, Ikonic, Zoran, Mantl, Siegfried, Buca, Dan

“…We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on…”
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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation: Insulating Films on Semiconductors 2013 by ÁNGELA PAMPILLÓN, María, FEIJOO, Pedro Carlos, SAN ANDRÉS, Enrique

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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments: Insulating Films on Semiconductors 2013 by SAN ANDRES, Enrique, ÁNGELA PAMPILLÓN, María, FEIJOO, Pedro Carlos, PÉREZ, Raúl, CAÑADILLA, Carmina

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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation by Pampillón, María Ángela, Feijoo, Pedro Carlos, Andrés, Enrique San

“…Microelectronic Engineering 109 (2013) 236-239 In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a…”
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Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics by Feijoo, Pedro Carlos, Pampillón, María Ángela, Andrés, Enrique San, Fierro, José Luis G

“…Semiconductor Science Technology 28 (2013) 085004 Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by…”
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Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering by Feijoo, Pedro Carlos, Pampillón, María Ángela, Andrés, Enrique San

“…Journal of Vacuum Science and Technology B 31 (2012) 01A103 High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In…”
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Scavenging effect on plasma oxidized Gd$_2$O$_3$ grown by high pressure sputtering on Si and InP substrates by Pampillón, María Ángela, Feijoo, Pedro Carlos, Andrés, Enrique San, García, Héctor, Castán, Helena, Dueñas, Salvador

“…Semiconductor Science and Technology 30 (2015) 035023 In this work, we analyze the scavenging effect of titanium gates on metal insulator semiconductor…”
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Optimization of scandium oxide growth by high pressure sputtering on silicon by Feijoo, Pedro Carlos, Pampillón, María Ángela, Andrés, Enrique San, Lucía, María Luisa

“…Thin Solid Films 526 (2012) 81-86 This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition…”
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High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation by Pampillón, María Ángela, Andrés, Enrique San, Feijoo, Pedro Carlos, Fierro, José Luis G

“…Semiconductor Science and Technology 32 (2017) 035016 This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure…”
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Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering by Pampillón, María Ángela, Feijoo, Pedro Carlos, Andrés, Enrique San, Lucía, María Luisa, Toledano-Luque, María

“…Microelectronic Engineering 88 (2011) 2991-2996 Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently,…”
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High Pressure Sputtering For Kigh-k Dielectric Deposition. Is It Worth Trying? by Andrés, Enrique San, Feijoo, Pedro Carlos, Pampillón, María Ángela, Lucía, María Luisa, del Prado, Álvaro

“…ECS Transactions, 61 (2) 27-39 (2014) Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure…”
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Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study by Pampillón, María Ángela, Feijoo, Pedro Carlos, Andrés, Enrique San, Toledano-Luque, María, del Prado, Álvaro, Blázquez, Antonio, Lucía, María Luisa

“…Microelectronic Engineering 88 (2011) 1357-1360 AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce…”
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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments by San Andrés, Enrique, Pampillón, María Ángela, Feijoo, Pedro Carlos, Pérez, Raúl, Cañadilla, Carmina

“…•Two-step high-pressure sputtering for Gd2O3 deposition on InP substrates.•Working MIS devices for all sputtering and plasma oxidation conditions.•High…”
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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd sub(2)O sub(3) as Gate Dielectric by Gao, Zhan, Romero, Maria Fatima, Pampillon, Maria Angela, San Andres, Enrique, Calle, Fernando

“…Thermal stability of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd sub(2)O sub(3) is investigated by…”
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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd 2 O 3 as Gate Dielectric by Gao, Zhan, Romero, Maria Fatima, Pampillon, Maria Angela, San Andres, Enrique, Calle, Fernando

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