Search Results - "Palmieri, Rodrigo"

Effect of H 2 O 2 in passivation of n‐ and p‐type 4H‐SiC surfaces by Palmieri, Rodrigo, Radtke, Cláudio, Boudinov, Henri, da Silva Jr, Eronides F.

“…Silicon carbide (SiC) presents many advantageous properties for electronic devices designed to work under extreme conditions such as high‐temperature (300–600…”
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Effect of H2O2 in passivation of n- and p-type 4H-SiC surfaces by Palmieri, Rodrigo, Radtke, Cláudio, Boudinov, Henri, da Silva Jr, Eronides F.

“…Silicon carbide (SiC) presents many advantageous properties for electronic devices designed to work under extreme conditions such as high‐temperature (300–600…”
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Alternative routes to minimize electrical degradation in 4H-SiC MOS capacitors by Stedile, Fernanda C., Pitthan, Eduardo, Palmieri, Rodrigo, Correa, Silma A., Soares, Gabriel V., Boudinov, Henri

“…To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO 2 film was thermally grown, monitored by X-ray photoelectron…”
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