Search Results - "Paletti, Paolo"

Electric-double-layer p–i–n junctions in WSe2 by Fathipour, Sara, Paletti, Paolo, Fullerton-Shirey, Susan K., Seabaugh, Alan C.

“…While p–n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant…”
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Two-dimensional electric-double-layer Esaki diode by Paletti, Paolo, Yue, Ruoyu, Hinkle, Christopher, Fullerton-Shirey, Susan K., Seabaugh, Alan

“…Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds,…”
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Tunnel FET Analog Benchmarking and Circuit Design by Lu, Hao, Paletti, Paolo, Li, Wenjun, Fay, Patrick, Ytterdal, Trond, Seabaugh, Alan

“…A platform for benchmarking tunnel field-effect transistors (TFETs) for analog applications is presented and used to compare selected TFETs to FinFET…”
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Scalable High-Mobility Graphene/hBN Heterostructures by Martini, Leonardo, Mišeikis, Vaidotas, Esteban, David, Azpeitia, Jon, Pezzini, Sergio, Paletti, Paolo, Ochapski, Michał W., Convertino, Domenica, Hernandez, Mar Garcia, Jimenez, Ignacio, Coletti, Camilla

“…Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we…”
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Tunnel Field-Effect Transistors: Device Models and Experiments on Two-Dimensional Semiconductors, including Demonstration of Electric-Double-Layer Esaki Junctions by Paletti, Paolo

“…Supply voltage scaling, as a means of reducing power dissipation in integrated circuits, is hampered by the 60 mV/decade limit on the inverse subthreshold…”
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Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203 by Paletti, Paolo, Seabaugh, Alan, Yue, Ruoyu, Hinkle, Christopher

“…An electric-double-layer (EDL) Esaki junction is demonstrated for the first time in a molecular beam epitaxy-grown WSe2 thin-film field-effect transistor…”
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Electric-double-layer p-i-n junctions in WSe 2 by Fathipour, Sara, Paletti, Paolo, Fullerton-Shirey, Susan K, Seabaugh, Alan C

“…While p-n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant…”
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Dynamics of Ferroelectric and Ionic Memories: Physics and Applications by Seabaugh, Alan, Paletti, Paolo, Palit, Anwesha, Gonzalez-Serrano, Karla, Pandey, Pratyush

“…Ferroelectric (FE) and solid polymer electrolytes (SPEs) are being explored for memory and for a variety of purposes in transistors. While considering the…”
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Demonstration of electric double layer p-i-n junction in WSe2 by Fathipour, Sara, Paletti, Paolo, Fullerton-Shirey, Susan, Seabaugh, Alan

“…We demonstrate the first electric double layer p-i-n junction in the channel of a WSe 2 field-effect transistor (FET). The measured current-voltage (I-V)…”
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First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport by Fathipour, Sara, Huamin Li, Paletti, Paolo, Remskar, Maja, Fullerton-Shirey, Susan, Seabaugh, Alan

“…While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS 2 [2-4] and WS 2 [5-8] nanotube…”
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Steep slope transistors: Tunnel FETs and beyond by Seabaugh, Alan, Alessandri, Cristobal, Heidarlou, Mina Asghari, Hua-Min Li, Leitao Liu, Hao Lu, Fathipour, Sara, Paletti, Paolo, Pandey, Pratyush, Ytterdal, Trond

“…Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress,…”
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Ionic liquid gating of CVD-growth WS2-based field effect transistors by Martini, Leonardo, Demontis, Valeria, Prete, Domenic, Convertino, Domenica, Pace, Simona, Paletti, Paolo, Coletti, Camilla, Rossella, Francesco

“…The study of two-dimensional (2D) materials has gained significant attention due to their potential use in electronic, spintronic, and optoelectronics…”
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Scalable High-Mobility Graphene/hBN Heterostructures by Martini, Leonardo, Mišeikis, Vaidotas, Esteban, David, Azpeitia, Jon, Pezzini, Sergio, Paletti, Paolo, Ochapski, Michał, Convertino, Domenica, Hernandez, Mar, Jimenez, Ignacio, Coletti, Camilla

“…ACS Applied Matererials and Interfaces 2023, 15, 31, 3779-37801 Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the…”
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Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors by Liu, Maomao, Wei, Sichen, Shahi, Simran, Jaiswal, Hemendra Nath, Paletti, Paolo, Fathipour, Sara, Remskar, Maja, Jiao, Jun, Hwang, Wansik, Yao, Fei, Li, Huamin

“…High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the…”
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