Search Results - "Palau, J.M."

Nuclear data adjustment using Bayesian inference, diagnostics for model fit and influence of model parameters by Kumar, D., Alam, S. B., Sjöstrand, H., Palau, J.M., De Saint Jean, C.

“…The mathematical models used for nuclear data evaluations contain a large number of theoretical parameters that are usually uncertain. These parameters can be…”
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Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations by Roche, P., Palau, J.M., Bruguier, G., Tavernier, C., Ecoffet, R., Gasiot, J.

“…A 3-D entire SRAM cell, based on a 0.35-/spl mu/m current CMOS technology, is simulated in this work with a DEVICE simulator. The transient current, resulting…”
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DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section by Weulersse, C., Hubert, G., Forget, G., Buard, N., Carriere, T., Heins, P., Palau, J.M., Saigne, F., Gaillard, R.

“…This paper presents the new detailed analysis of the secondary ion effect analytical version that allows fast and accurate calculation of neutron, proton and…”
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Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code by Miller, F., Buard, N., Hubert, G., Alestra, S., Baudrillard, G., Carriere, T., Gaillard, R., Palau, J.M., Saigne, F., Fouillat, P.

“…This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use…”
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A review of the techniques used for modeling single-event effects in power MOSFETs by Johnson, G.H., Palau, J.M., Dachs, C., Galloway, K.F., Schrimpf, R.D.

“…Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely,…”
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Single particle-induced latchup by Bruguier, G., Palau, J.-M.

“…This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy…”
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SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain by Roche, Ph, Palau, J.M., Belhaddad, K., Bruguier, G., Ecoffet, R., Gasiot, J.

“…The first SEU response of a complete 3-D SRAM cell is presented. This simulation method allows one to verify the accuracy of the commonly used mixed-mode…”
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SEGR and SEB in n-channel power MOSFETs by Allenspach, M., Dachs, C., Johnson, G.H., Schrimpf, R.D., Lorfevre, E., Palau, J.M., Brews, J.R., Galloway, K.F., Titus, J.L., Wheatley, C.F.

“…For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The…”
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SEU critical charge and sensitive area in a submicron CMOS technology by Detcheverry, C., Dachs, C., Lorfevre, E., Sudre, C., Bruguier, G., Palau, J.M., Gasiot, J., Ecoffet, R.

“…This work presents SEU phenomena in advanced SRAM memory cells. Using mixed-mode simulation, the effects of scaling on the notions of sensitive area and…”
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A new approach for the prediction of the neutron-induced SEU rate by Vial, C., Palau, J.M., Gasiot, J., Calvet, M.C., Fourtine, S.

“…A new approach for SEU rate prediction in components submitted to neutron environment is presented. The method aims to take into account the characteristics of…”
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Threshold LET for SEU induced by low energy ions [in CMOS memories] by McNulty, P.J., Roche, P., Palau, J.M., Gasiot, J.

“…Simulations to determine the threshold LET as a function of the length of the ion track are consistent with there being two regions of charge collection. In…”
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Heavy ion induced failures in a power IGBT by Lorfevre, E., Dachs, C., Detcheverry, C., Palau, J.-M., Gasiot, J., Roubaud, F., Calvet, M.-C., Ecoffet, R.

“…Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that…”
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Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs by Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P.

“…Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations…”
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Cell design modifications to harden an N-channel power IGBT against single event latchup by Lorfevre, E., Sagnes, B., Bruguier, G., Palau, J.M., Gasiot, J., Calvet, M.C., Ecoffet, R.

“…A device simulator is used to analyze the heavy ion induced failure mechanism in insulated gate bipolar transistors (IGBTs) and to investigate hardening…”
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Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout by Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P., Calvett, M.-C., Calvel, P.

“…2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction,…”
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Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs by Roubaud, F., Dachs, C., Palau, J.-M., Gasiot, J., Tastet, P.

“…The use of the 2D simulator MEDICI as a tool for single event burnout (SEB) comprehension is investigated. Simulation results are compared to experimental…”
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Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment by Baggio, J., Lambert, D., Ferlet-Cavrois, V., D'hose, C., Hirose, K., Saito, H., Palau, J.M., Saigne, F., Sagnes, B., Buard, N., Carriere, T.

“…In this work we compare the Soft Error Rate (SER) sensitivity of commercial bulk and SOI devices in the terrestrial neutron environment. The SOI parts exhibit…”
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The use of charge-pumping for characterizing irradiated power MOSFETs by Prevost, G., Augier, P., Palau, J.-M.

“…A charge-pumping technique is proposed for characterizing radiation-induced interface traps in vertical power MOSFETs. An original setup allowing measurements…”
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SEU sensitive depth in a submicron SRAM technology by Detcheverry, C., Ecoffet, R., Duzellier, S., Lorfevre, E., Bruguier, G., Barak, J., Lifshitz, Y., Palau, J.M., Casiot, J.

“…This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 /spl mu/m SRAM technology. A good correlation is obtained between the…”
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SEB occurrence in a VIP: Influence of the epi-substrate junction by Lorfevre, E., Sudre, C., Dachs, C., Detcheverry, C., Palau, J.-M., Gasiot, J., Calvet, M.-C., Garnie, J., Ecoffet, R.

“…Heavy ion induced burnout is reported for the first time in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this…”
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