Search Results - "Palade, C."

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  1. 1

    Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect by Lepadatu, A.-M., Slav, A., Palade, C., Dascalescu, I., Enculescu, M., Iftimie, S., Lazanu, S., Teodorescu, V. S., Ciurea, M. L., Stoica, T.

    Published in Scientific reports (20-03-2018)
    “…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
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    Journal Article
  2. 2

    Optoelectric charging-discharging of Ge nanocrystals in floating gate memory by Palade, C., Slav, A., Lepadatu, A. M., Maraloiu, A. V., Dascalescu, I., Iftimie, S., Lazanu, S., Ciurea, M. L., Stoica, T.

    Published in Applied physics letters (19-11-2018)
    “…Photo-induced effects on charging and discharging of nanocrystals (NCs) in capacitor memories with Ge NCs in an HfO2 matrix as a floating gate layer are…”
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    Journal Article
  3. 3

    Subarachnoid hemorrhage and cerebral vasospasm - literature review by Ciurea, A V, Palade, C, Voinescu, D, Nica, D A

    Published in Journal of medicine and life (15-06-2013)
    “…Subarachnoid hemorrhage represents a serious disease with high mortality and morbidity. Two important areas are becoming the central research interest of…”
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    Journal Article
  4. 4

    How morphology determines the charge storage properties of Ge nanocrystals in HfO2 by Slav, A., Palade, C., Lepadatu, A.M., Ciurea, M.L., Teodorescu, V.S., Lazanu, S., Maraloiu, A.V., Logofatu, C., Braic, M., Kiss, A.

    Published in Scripta materialia (01-03-2016)
    “…The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures…”
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    Journal Article
  5. 5

    Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films by Stavarache, I., Palade, C., Slav, A., Prepelita, P., Teodorescu, V. S., Ciurea, M. L.

    “…Ge nanoparticles in SiO 2 or Si 3 N 4 on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO 2 or Si 3 N 4 targets. Transmission electron…”
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    Conference Proceeding
  6. 6

    Effects produced by iodine irradiation on high resistivity silicon by Lazanu, S, Slav, A, Lepadatu, A-M, Stavarache, I, Palade, C, Iordache, G, Ciurea, M L

    Published in Applied physics letters (10-12-2012)
    “…The effects of 5 × 1011 cm−2 6+I127 ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The…”
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    Journal Article
  7. 7

    Subsurface treatment of a contact subjected to a hertz pressure by Palade, A.-C., Pillon, G.-P., Cicala, E., Grevey, D., Marsavina, L.

    “…The study proposes an approach allowing the favorable modification of the stresses field of a structure subjected to a Hertzian contact. It is based on the…”
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    Journal Article
  8. 8

    Interference of apoptosis in the pathophysiology of subarachnoid hemorrhage by Palade, C, Ciurea, Alexandru, Nica, D, Savu, R, Moisa, Horatiu

    Published in Asian journal of neurosurgery (01-04-2013)
    “…Programmed cell death is crucial for the correct development of the organism and the clearance of harmful cells like tumor cells or autoreactive immune cells…”
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    Journal Article
  9. 9

    Memory properties of GeZrO2 based trilayer structure by Palade, C., Slav, A., Ciurea, M. L.

    “…The memory properties of a trilayer structure of ZrO 2 /Ge-ZrO 2 /ZrO 2 /Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition…”
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    Conference Proceeding
  10. 10

    Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering by Dascalescu, I., Palade, C., Lungu, G.A., Lepadatu, A.M., Teodorescu, V.S., Braic, M., Ciurea, M.L., Stoica, T., Slav, A.

    Published in Journal of alloys and compounds (05-01-2025)
    “…This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron…”
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    Journal Article
  11. 11

    Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2 by Palade, C., Lepadatu, A.M., Slav, A., Lazanu, S., Teodorescu, V.S., Stoica, T., Ciurea, M.L.

    Published in Applied surface science (15-01-2018)
    “…[Display omitted] Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si…”
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    Journal Article
  12. 12

    In-situ magnetron sputtering co-deposition of Ge nanoparticles in Si3N4 films for near infrared detection by Stavarache, I., Palade, C., Prepelita, P., Teodorescu, V. S., Ciurea, M. L.

    “…Deposition of Ge nanoparticles in Si 3 N 4 films by heating Si and quartz substrates at 500 °C were obtained using co-sputtering Ge, and Si3N4. Their structure…”
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    Conference Proceeding
  13. 13
  14. 14

    SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals by Lepadatu, A. M., Palade, C., Slav, A., Dascalescu, I., Cojocaru, O., Iftimie, S., Teodorescu, V. S., Stoica, T., Ciurea, M. L.

    “…The 1600 nm-extended SWIR photoresponse of SiGe/TiO 2 multilayers with Ge-rich SiGe nanocrystals (NCs) is demonstrated. The SiGe NCs based multilayers are…”
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    Conference Proceeding
  15. 15

    Light illumination effects on floating gate memory with Ge nanocrystals in HfO2 by Palade, C., Slav, A., Lepadatu, A. M., Lazanu, S., Ciurea, M. L., Stoica, T.

    “…The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO 2 was studied. The capacitor was…”
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    Conference Proceeding
  16. 16

    Correlation between strain and defects in Bi implanted Si by Palade, C., Lepadatu, A.-M., Slav, A., Ciurea, M.L., Lazanu, S.

    “…The strain in Si containing group-V impurities is a topical subject of study due to its potential applications in quantum computing. In this paper we study…”
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    Journal Article
  17. 17

    Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2 by Dascalescu, I., Cojocaru, O., Lalau, I., Palade, C., Slav, A., Lepadatu, A.M., Lazanu, S., Stoica, T., Ciurea, M.L.

    “…The VIS-SWIR photosensing properties of Ge and GeSi NCs embedded in TiO 2 films are investigated. For this, we deposit GeTiO 2 and GeSiTiO 2 films,…”
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    Conference Proceeding
  18. 18

    Dense Ge nanocrystals embedded in TiO 2 with exponentially increased photoconduction by field effect by Lepadatu, A-M, Slav, A, Palade, C, Dascalescu, I, Enculescu, M, Iftimie, S, Lazanu, S, Teodorescu, V S, Ciurea, M L, Stoica, T

    Published in Scientific reports (20-03-2018)
    “…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
    Get full text
    Journal Article
  19. 19

    Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers by Slav, A., Palade, C., Stavarache, I., Teodorescu, V. S., Ciurea, M. L., Muller, R., Dinescu, A., Sultan, M. T., Manolescu, A., Gudmundsson, J. T., Svavarsson, H. G.

    “…The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO 2 cap/(GeSi/TiO 2 ) 2…”
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    Conference Proceeding
  20. 20

    Photosensitive GeSi/TiO2 multilayers in VIS-NIR by Palade, C., Dascalescu, I., Slav, A., Lepadatu, A. M., Lazanu, S., Stoica, T., Teodorescu, V. S., Ciurea, M. L., Comanescu, F., Muller, R., Dinescu, A., Enuica, A.

    “…The electrical and photosensing properties correlated with structure and morphology of TiO 2 /(GeSi/TiO 2 ) 2 multilayers are investigated. The multilayers are…”
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    Conference Proceeding