Search Results - "Pala, Marco G"

Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials by M'foukh, Adel, Pala, Marco G., Esseni, David

“…This article presents the methodology, implementation, and application of a full-band quantum transport model based on the nonequilibrium Green's function…”
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A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect by Logoteta, Demetrio, Pala, Marco G., Choukroun, Jean, Dollfus, Philippe, Iannaccone, Giuseppe

“…We propose a steep-slope MoS 2 -nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic…”
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Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs-Part II: Comparative Analysis and Trap-Induced Variability by Esseni, David, Pala, Marco G.

“…This paper extends the analysis of the companion paper by presenting a comparative analysis of the impact of interface traps on the I-V characteristics of InAs…”
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Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETs by Pala, Marco G., Esseni, David

“…This paper and the companion work present a full quantum study of the influence of interface traps on the I-V characteristics of InAs nanowire Tunnel-field…”
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Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs by Esseni, David, Pala, Marco G., Rollo, Tommaso

“…We present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By…”
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Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs by Grillet, Corentin, Logoteta, Demetrio, Cresti, Alessandro, Pala, Marco G.

“…We present a numerical study aimed to benchmark short gate InAs nanowire-FETs (NW-FETs) against their strained Si (sSi) counterpart. Our full-quantum…”
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Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study by Jiang Cao, Logoteta, Demetrio, Ozkaya, Sibel, Biel, Blanca, Cresti, Alessandro, Pala, Marco G., Esseni, David

“…We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory…”
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Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading by Brocard, Sylvan, Pala, Marco G., Esseni, David

“…We propose to employ a grading of the molar fraction in the source region of III-V hetero-junction tunnel-FETs as a means to improve the on-current without…”
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Superconducting proximity effect in interacting quantum dots revealed by shot noise by Braggio, Alessandro, Governale, Michele, Pala, Marco G., König, Jürgen

“…We study the full counting statistics of charge transport through a quantum dot tunnel coupled to one normal and one superconducting lead with a large…”
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Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination by Pilotto, Alessandro, M'Foukh, Adel, Dollfus, Philippe, Saint-Martin, Jeriome, Pala, Marco G.

“…We present a full-band quantum transport model based on the Empirical Pseudopotential Method (EPM) that includes electron-phonon scattering and…”
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On the origins of transport inefficiencies in mesoscopic networks by Toussaint, Sébastien, Martins, Frederico, Faniel, Sébastien, Pala, Marco G., Desplanque, Ludovic, Wallart, Xavier, Sellier, Hermann, Huant, Serge, Bayot, Vincent, Hackens, Benoit

“…A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesoscopic network patterned in a two-dimensional electron system…”
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Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs by Pala, Marco G., Brocard, Sylvan

“…This paper presents full-quantum 3-D simulations predicting the electrical performance of nanowire tunnel-FETs based on III-V hetero-junctions. Our…”
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Nonequilibrium Josephson and Andreev current through interacting quantum dots by Pala, Marco G, Governale, Michele, König, Jürgen

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Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors by Pala, Marco G., Grillet, Corentin, Cao, Jiang, Logoteta, Demetrio, Cresti, Alessandro, Esseni, David

“…We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is…”
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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs by Cresti, A., Pala, M. G., Poli, S., Mouis, M., Ghibaudo, G.

“…We study the effect of surface roughness (SR) at the Si/SiO 2 interfaces on transport properties of quasi 1-D and 2-D silicon nanodevices by comparing the…”
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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs by Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.

“…Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are analyzed by means of a full- quantum 3-D self-consistent simulation. A…”
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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs by Poli, S., Pala, M.G.

“…We investigate the role of two main scattering mechanisms responsible for mobility degradation in ultrashort electron devices like silicon-nanowire FETs. We…”
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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs by Buran, C., Pala, M.G., Bescond, M., Dubois, M., Mouis, M.

“…We address the transport properties of narrow gate-all-around silicon nanowires in the presence of surface-roughness (SR) scattering at the Si/SiO 2 interface,…”
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Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs by Poli, S., Pala, M.G., Poiroux, T.

“…We study the influence of remote Coulomb scattering (RCS) due to trapped charges at the silicon oxide/high- kappa material interface on the electrical…”
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Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs by Bekaddour, A., Pala, M. G., Chabane-Sari, N., Ghibaudo, G.

“…We present a theoretical study of the trap-charge-induced variability of threshold voltage in silicon-nanowire FETs. By exploiting full-quantum 3-D…”
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