Search Results - "Pakula, K."

Combined Effect of the Cfr Methyltransferase and Ribosomal Protein L3 Mutations on Resistance to Ribosome-Targeting Antibiotics by Pakula, Kevin K, Hansen, Lykke H, Vester, Birte

“…Several groups of antibiotics inhibit bacterial growth by binding to bacterial ribosomes. Mutations in ribosomal protein L3 have been associated with…”
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STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures by Wlasny, I., Pakula, K., Stepniewski, R., Strupinski, W., Pasternak, I., Baranowski, J. M., Wysmolek, A.

“…We present the study of metalorganic vapor phase epitaxy hexagonal boron nitride (MOVPE-h-BN) and graphene/MOVPE-h-BN heterostructures under the illumination…”
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An Influence of X-Ray Irradiation on Mid-Bandgap Luminescence of Boron Nitride Epitaxial Layers by Szoła, M., Tokarczyk, M., Kowalski, G., Binder, J., Pakuła, K., Dąbrowska, A., Wysmołek, A., Łusakowski, J.

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Observation of Native Ga Vacancies in GaN by Positron Annihilation by Saarinen, K., Laine, T., Kuisma, S., Nissilä, J., Hautojärvi, P., Dobrzynski, L., Baranowski, J. M., Pakula, K., Stepniewski, R., Wojdak, M., Wysmolek, A., Suski, T., Leszczynski, M., Grzegory, I., Porowski, S.

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Contactless electroreflectance studies of surface potential barrier in AlGaN/n-AlGaN structures with various Al concentrations by Janicki, Ł., Kudrawiec, R., Pakuła, K., Stępniewski, R., Misiewicz, J.

“…Contactless electroreflectance spectroscopy has been applied to study the surface potential barrier in AlxGa1−xN/n‐AlxGa1−xN structures with 0 ≤ x ≤ 0.25 grown…”
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Light Induced Modification of Graphene Oxide Layers on GaN Basis by Łopion, A., Stobiński, L., Pakuła, K., Bożek, R., Kaźmierczak, P., Wysmołek, A., Stępniewski, R.

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Lattice parameters of gallium nitride by Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T., Cheng, T. S.

“…Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at…”
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Structural and Optical Properties of Boron Nitride Grown by MOVPE by Dąbrowska, A.K., Pakuła, K., Bożek, R., Rousset, J.G., Ziółkowska, D., Gołasa, K., Korona, K.P., Wysmołek, A., Stępniewski, R.

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Towards practical applications of quantum emitters in boron nitride by Koperski, M., Pakuła, K., Nogajewski, K., Dąbrowska, A. K., Tokarczyk, M., Pelini, T., Binder, J., Fąs, T., Suffczyński, J., Stępniewski, R., Wysmołek, A., Potemski, M.

“…We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into…”
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Optical and Electrical Studies of Graphene Deposited on GaN Nanowires by Kierdaszuk, J., Kaźmierczak, P., Drabińska, A., Wysmołek, A., Korona, K., Kamińska, M., Pakuła, K., Pasternak, I., Krajewska, A., Żytkiewicz, Z.R.

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Magnetopolaron effect on shallow donors in GaN by Wysmołek, A., Stępniewski, R., Potemski, M., Chwalisz-Piętka, B., Pakuła, K., Baranowski, J. M., Look, D. C., Park, S. S., Lee, K. Y.

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Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells by Zieleniewski, K., Pakuła, K., Bożek, R., Masztalerz, K., Wysmołek, A., Stępniewski, R.

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Electroreflectance and photoreflectance spectra of tricolor III-nitride detector structures by Drabinska, Aneta, Korona, K. P., Pakula, K., Baranowski, J. M.

“…Results of photoreflectance and electroreflectance on tunable UV detector are presented. The active region of the detector consists of three layers: GaN,…”
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Light-induced narrowing of excitonic absorption lines in GaN by Trautman, P., Pakuła, K., Bożek, R., Baranowski, J. M.

“…The fundamental absorption edge of GaN has been investigated in GaN/AlxGa1−xN heterostructures. A broad excitonic line is observed after the sample has been…”
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Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment by PAKUŁA, K, BOZEK, R, BARANOWSKI, J. M, JASINSKI, J, LILIENTAL-WEBER, Z

“…TEM and AFM data show that a significant reduction of threading dislocations in heteroepitaxial GaN/Al2O3 grown by MOCVD has been achieved. The reduction has…”
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Triple axis diffractometric investigations of the microstructure of thin AlxGa1-xN epitaxial films by Zielinska-Rohozinska, E., Kowalska, M., Pakuła, K.

“…AlxGa1‐xN/GaN (Si doped or undoped) with the Al content in the composition range of 0.046 ≤ x ≤ 0.164 grown on the c sapphire face by atmospheric pressure…”
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Single GaN/AlGaN Quantum Dot Spectroscopy by Surowiecka, K., Wysmołek, A., Stępniewski, R., Bożek, R., Pakuła, K., Baranowski, J.M.

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Characterization of InGaN/GaN heterostructures by means of RBS/channeling by Nowicki, L., Ratajczak, R., Stonert, A., Turos, A., Baranowski, J.M., Banasik, R., Pakuła, K.

“…In x Ga 1 − x N epitaxial layers with 0<x<0.12 were grown on GaN/sapphire substrates by the MOCVD technique. These layers were characterized by means of the…”
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Localized vibrational modes of carbon-hydrogen complexes in GaN by Manasreh, M. O., Baranowski, J. M., Pakula, K., Jiang, H. X., Lin, Jingyu

“…Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform…”
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Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers by Neu, G., Teisseire, M., Frayssinet, E., Knap, W., Sadowski, M. L., Witowski, A. M., Pakula, K., Leszczynski, M., Prystawko, P.

“…Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited…”
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