Search Results - "Pak, Kangsa"

Observation of threading dislocation generation process in highly lattice-mismatched heteroepitaxy by KAWAI, T, YONEZU, H, SAITO, D, YOKOZEKI, M, KANGSA PAK

“…The generation process of threading dislocations in highly lattice-mismatched heteroepitaxy was investigated by transmission electron microscopy (TEM). In the…”
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Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam by Nishiyama, Tomokazu, Kim, Eum-Mi, Numata, Kazutoshi, Pak, Kangsa

“…We introduced a new growth/doping method for selective areas and demonstrated the in situ maskless selective doping of GaAs films using a low-energy focused…”
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Initial growth mechanism of Si on GaAs studied by reflection high-energy electron diffraction oscillations by LOPEZ, M, TAKANO, Y, PAK, K, YONEZU, H

“…We have studied the initial growth mechanism of Si on GaAs(100) and GaAs(111)B substrates by observing the behavior of the reflection high-energy electron…”
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Initial growth of GaN on sapphire(0 0 0 1) using an amorphous buffer layer formed at room temperature by RF-MBE by Ohshima, Naoki, Yonezu, Hiroo, Yamahira, Seiji, Pak, Kangsa

“…The two-step growth process of GaN layer on sapphire using a buffer layer deposited at room temperature has been investigated by in situ reflection high-energy…”
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Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing by Takagi, Yasufumi, Yonezu, Hiroo, Yoshiaki Hachiya, Yoshiaki Hachiya, Kangsa Pak, Kangsa Pak

“…The effects of high-temperature annealing were investigated by transmission electron microscopy (TEM) and secondary ions mass spectroscopy (SIMS) on reduction…”
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Heteroepitaxial growth of InAs on misoriented GaAs(111)B substrates by molecular beam epitaxy by TAKANO, Y, IKEI, T, HACHIYA, Y, KISHIMOTO, Y, PAK, K, YONEZU, H

“…Epilayers of InAs without twins were grown on 0.5°-misoriented GaAs(111)B substrates by molecular beam epitaxy. For a 2-µm-thick InAs epilayer, the full width…”
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Increase of critical thickness and optical emission range in (InAs)1(GaAs)n strained short-period superlattices by SAITO, D, YONEZU, H, KAWAI, T, YOKOZEKI, M, KANGSA PAK

“…The critical thickness and optical emission wavelength range of (InAs) 1 (GaAs) n strained short-period superlattices (SSPSs) grown on GaAs(100) substrates…”
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An optical adaptive device and its application to a competitive learning circuit by TSUJI, K, YONEZU, H, HOSONO, K, SHIBAO, K, OHSHIMA, N, PAK, K

“…A mechanism suppressing the divergence of synaptic weights should be added to the network performing unsupervised learning algorithms with the Hebbian rule. In…”
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Reduction of threading dislocation density in an (InAs)1(GaAs)1 strained short-period superlattice by atomic hydrogen irradiation by YOKOZEKI, M, YONEZU, H, TSUJI, T, OHSHIMA, N, PAK, K

“…The generation process of dislocations as well as the initial growth mechanism were investigated in the growth of an (InAs) 1 (GaAs) 1 strained short-period…”
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Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth by Nishide, Shuichi, Yoshimura, Takashi, Takamatsu, Yukichi, Ichige, Atsushi, Pak, Kangsa, Ohshima, Naoki, Yonezu, Hiroo

“…Tertiarybutylhydrazine (TBHy) is one of the alternative nitrogen sources to ammonia. We investigated pyrolysis of TBHy using quadrupole mass spectrometer and…”
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Strain relaxation process of (InAs)m(GaAs)n strained short-period superlattices grown by molecular beam epitaxy by KAWAI, T, YONEZU, H, SAITO, D, YOKOZEKI, M, PAK, K

“…The strain relaxation process and crystalline quality of (InAs) m (GaAs) n strained short-period superlattices (SSPSs) grown on a GaAs(001) substrate were…”
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A study on in-situ maskless selective epitaxy of GaAs by a low-energy Ga focused ion beam with an As4 molecular beam by Saitoh, Isao, Pak, Kangsa, Inoue, Yuichiroh, Ohshima, Naoki, Yonezu, Hiroo

“…In-situ maskless selective epitaxy of GaAs was performed with a low-energy Ga focused ion beam (FIB) and an As4 molecular beam. The low-energy Ga FIB and the…”
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The substrate orientation dependence of In atom incorporation during the growth of (In,Ga)As on GaAs by molecular-beam epitaxy by Pak, Kangsa, Fahy, Michael R, Zhang, Xiao-Mei, Joyce, Bruce A

“…This paper reports on a comparison of the relative extent of desorption of indium atoms during growth by molecular-beam epitaxy of (In,Ga)As films between GaAs…”
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Realization of two-dimensional growth and suppression of threading dislocation generation in (InP)1(GaAs)n quaternary strained short-period superlattices grown on GaAs by HAYASHIDA, K, TAKAGI, Y, SAMONJI, K, YONEZU, K, YOKOZEKI, M, OHSHIMA, N, PAK, K

“…We investigated the growth mode and the dislocation generation process in the growth of (InP) 1 (GaAs) n quaternary strained short-period superlattice (SSPS)…”
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Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence by Nishinaga, Tatau, Sasaoka, Chiaki, Pak, Kangsa

“…Nitrogen inhomogeneity in LPE GaP is studied by spatially resolved photoluminescence. It is found that the nitrogen is doped much less under the macrostep…”
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Initial growth mechanism of GaAs on Si(110) by LOPEZ, M, IKEI, T, TAKANO, Y, PAK, K, YONEZU, H

“…We report the initial growth mechanism of GaAs on Si(110) by molecular beam epitaxy. From in-situ reflection high-energy electron diffraction (RHEED)…”
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Growth mechanism in migration-enhanced epitaxy of AlAs on misoriented GaAs(111)B substrates by TAKANO, Y, TORIHATA, T, KAWAI, T, PAK, K, YONEZU, H

“…Reflection high-energy electron diffraction (specular beam intensity) in migration-enhanced epitaxy of AlAs and GaAs has been investigated. The step flow…”
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An X-ray diffraction method for characterization of several lattice-matched heteroepitaxial films by ITOH, N, WAKAHARA, A, SATO, T, PAK, K, YOSHIDA, A, YONEZU, H

“…It has been considered that when the structure amplitude | F | for a quasi-forbidden reflection of a lattice-matched heteroepitaxial film is considerably…”
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An optoelectronic synaptic connection circuit with variable analog and nonvolatile weights by YONEZU, H, HIMENO, T, KANAMORI, K, PAK, K, TAKANO, Y

“…An artificial synaptic connection circuit was constructed using an optical interconnection and a nonvolatile memory device. Nonvolatile analog synaptic weights…”
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Doping Effect of Oxygen on Horizontal Bridgman Grown InP by Pak, Kangsa, Nakano, Tetsuo, Nishinaga, Tatau

“…The doping effect of oxygen in melt grown InP was investigated by both Hall measurement and thermodynamical analysis. In the case when an oxygen doped crystal…”
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