Search Results - "Paine, B. M."

Intentional delay of aftercoming siblings : a report of two cases by PAINE, J. M, PAINE, B. M, WASHINGTON, J

“…Intentional delay of the birth of the aftercoming sibling or siblings in multiple gestations is uncommon. Our experience with two such cases is reported…”
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Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability by Paine, B.M, Wong, R.C, Schmitz, A.E, Walden, R.H, Nguyen, L.D, Delaney, M.J, Hum, K.C

“…The reliability of AlInAs/GaInAs high electron mobility transistor (HEMT) monolithic microwave integrated circuits on InP substrates from HRL Labs has been…”
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Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy by TEJWANI, M. J, KANBER, H, PAINE, B. M, WHELAN, J. M

“…We have grown abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy is used to study the…”
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X-ray rocking curve study of Si-implanted GaAs, Si, and Ge by Speriosu, V. S., Paine, B. M., Nicolet, M-A., Glass, H. L.

“…Crystalline properties of Si-implanted 〈100〉 GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and…”
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HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy by Cheung, J. T., Niizawa, G., Moyle, J., Ong, N. P., Paine, B. M., Vreeland, T.

“…CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the…”
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Ion mixing of markers in SiO2 and Si by BARCZ, A. J, PAINE, B. M, NICOLET, M.-A

“…The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions…”
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Epitaxial regrowth of thin amorphous GaAs layers by Grimaldi, M. G., Paine, B. M., Mäenpää, M., Nicolet, M.-A., Sadana, D. K.

“…Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing…”
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Low-temperature, high-current lifetests on InP-based HBT's by Paine, B.M., Thomas, S., Delaney, M.J.

“…Accelerated lifetests have been conducted on AlInAs-GaInAs HBT devices on InP wafers. Current densities were relatively high, while junction temperatures were…”
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Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications by Ren, F., Pearton, S. J., Tennant, D. M., Resnick, D. J., Abernathy, C. R., Kopf, R. F., Wu, C. S., Hu, M., Pao, C. K., Paine, B. M., Wang, D. C., Wen, C. P.

“…Dry‐etching technologies for submicron gate recess and resist pattern transfer are demonstrated with bilayer and trilevel resist systems for power and digital…”
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Reversible Intramolecular Alkyl C−H Bond Activation, Alcohol Dehydrogenation, and Trans−Cis Dihydride Isomerization in Ruthenium N-Heterocyclic Carbene Complexes by Burling, Suzanne, Mahon, Mary F, Paine, Belinda M, Whittlesey, Michael K, Williams, Jonathan M. J

“…Thermolysis of Ru(IEt2Me2)(PPh3)2(CO)H2 (IEt2Me2 = 1,3-bis(ethyl)-4,5-dimethylimidazol-2-ylidene) in the presence of CH2CHSiMe3 results in C−H activation of…”
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Design translation of an X-band multifunction PHEMT MMIC by Yau, W., Kanber, H., Wu, C.S., Paine, B.M., Bar, S., Bardai, Z., Janesch, S., Kaputa, D., Fabian, W.

“…Design translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is…”
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Anchoring in Destination Therapy Left Ventricular Assist Device Decision Making: A Mechanical Turk Survey by Paine, Arcadia M., BA, Allen, Larry A., MD, MHS, MHS, Thompson, Jocelyn S., MA, McIlvennan, Colleen K., DNP, ANP, Jenkins, Amy, MS, Hammes, Andrew, BS, Kroehl, Miranda, PhD, Matlock, Daniel D., MD, MPH

“…Highlights • Medical decisions are complex -seemingly unrelated factors can cause undue influence • Anchoring appears to affect perceptions of LVADs, but not…”
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( p , γ ) resonance strengths in the s − d shell by Paine, B. M., Kennett, S. R., Sargood, D. G.

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The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes by Paine, Bruce M., Shah, Ami P., Rust, Thomas

“…Thermal resistances in InP-based HBTs have been determined by electrical measurement and finite-difference calculation. These devices contain substantial…”
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Recrystallization of silicon-on-sapphire by cw Ar laser irradiation: Comparison between the solid- and the liquid-phase regimes by Golecki, I., Kinoshita, G., Gat, A., Paine, B. M.

“…The annealing behavior under cw Ar laser irradiation (LI) has been studied for 0.2–0.5-μm-thick silicon-on-sapphire (SOS) epitaxial films. Analysis by MeV He+…”
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Reliability and failure criteria for AlInAs/GaInAs/InP HBTs by Kiziloglu, K., Thomas, S., Williams, F., Paine, B.M.

“…We have performed accelerated temperature and bias lifetests on single-heterojunction AlInAs/GaInAs/InP bipolar transistors (HBTs). Discrete HBTs were…”
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Erratum: Recrystallization of silicon-on-sapphire by cw Ar laser irradiation: Comparison between the solid- and the liquid-phase regimes by Golecki, I., Kinoshita, G., Gat, A., Paine, B. M.

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X-Ray Rocking Curve Study of Silicon-Implanted GaAs, Silicon and Germanium by Speriosu, V S, Paine, B M, Nicolet, M-A, Glass, H L

“…Crystalline properties of Si-implanted < 100 > GaAs, Si and Ge have been studied by Bragg case double-crystal X-ray diffraction. Sharp qualitative and…”
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X‐ray diffraction characterization of multilayer semiconductor structures by Vreeland, Thad, Paine, Bruce M.

“…The analysis of double‐crystal x‐ray rocking curves of single‐crystal layered structures can give valuable information on layer strains, displacement of atoms…”
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Design translation of an X-band multifunction PHEMT MMIC by Yau, W., Kanber, H., Wu, C.S., Paine, B.M., Bar, S., Bardai, Z., Janesch, S., Kaputa, D., Fabian, W.

“…Design Translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is…”
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