Search Results - "Pacheco Rotondaro, Antonio Luis"
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Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs
Published in IEEE transactions on electron devices (01-06-2006)“…Low-frequency noise measurements and analysis were performed on n-channel MOSFETs with HfSiON as the gate-dielectric material. The role of SiON…”
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Journal Article -
2
Fatigue analysis of IC packaging
Published in 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro) (01-08-2015)“…Computer simulation was used to examine the fundamental behavior of the fatigue in IC packaging systems with considerable saving of time and resources. The…”
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Conference Proceeding -
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Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures
Published in IEEE transactions on electron devices (01-04-1993)“…The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI were experimentally extracted at room and liquid-helium…”
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Journal Article