Search Results - "Pacheco Rotondaro, Antonio Luis"

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  1. 1

    Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs by Bigang Min, Devireddy, S.P., Celik-Butler, Z., Shanware, A., Colombo, L., Green, K., Chambers, J.J., Visokay, M.R., Rotondaro, A.L.P.

    Published in IEEE transactions on electron devices (01-06-2006)
    “…Low-frequency noise measurements and analysis were performed on n-channel MOSFETs with HfSiON as the gate-dielectric material. The role of SiON…”
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    Journal Article
  2. 2

    Fatigue analysis of IC packaging by Davanco Pereira de Lima, Vanessa, Pacheco Rotondaro, Antonio Luis

    “…Computer simulation was used to examine the fundamental behavior of the fatigue in IC packaging systems with considerable saving of time and resources. The…”
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    Conference Proceeding
  3. 3

    Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures by Rotondaro, A.L.P., Magnusson, U.K., Claeys, C., Flandre, D., Terao, A., Colinge, J.-P.

    Published in IEEE transactions on electron devices (01-04-1993)
    “…The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI were experimentally extracted at room and liquid-helium…”
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    Journal Article