Search Results - "PRIBYTNY, P"

Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation by Chvala, A., Donoval, D., Beno, P., Marek, J., Pribytny, P., Molnar, M.

“…An analysis of electrostatic discharge (ESD) protection structures supported by advanced 2-D mixed mode electro-thermal device and circuit simulation with…”
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Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation by Pribytny, P., Donoval, D., Chvala, A., Marek, J., Molnar, M.

“…High reliability and performance of power semiconductor devices depend on an optimized design based on a good understanding of their electro-thermal behavior…”
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Neural Network for Electrothermal Circuit Model of SiC Power MOSFET by Chvala, A., Cernaj, L., Marek, J., Pribytny, P., Kozarik, J., Donoval, D.

“…This paper presents electrothermal circuit model of SiC power MOSFET. The model is calibrated automatically by artificial neural network (NN). Appropriate…”
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Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors by MOLNAR, M, DONOVAL, D, KUZMIK, J, MAREK, J, CHVALA, A, PRIBYTNY, P, MIKOLASEK, M, RENDEK, K, PALANKOVSKI, V

“…We investigate the impact of interface traps and bulk traps on the performance of n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) using…”
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The secret of successful student team project by Marek, J., Benko, P., Chvala, A., Kosa, A., Pribytny, P., Stuchlikova, L., Donoval, D.

“…This paper demonstrates authors' practical experience obtained during realization, organization and supervision of the Team Project courses at the Institute of…”
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Electrothermal Model of Power IGBT Module for Circuit Simulations by Pribytny, P., Chvala, A., Marek, J., Donoval, D.

“…This paper presents electrothermal circuit model of power IGBT module for circuit simulations. The model interconnects existing models of single IGBT and our…”
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Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices by Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.

“…In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and…”
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Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation by Molnar, M., Donoval, D., Chvala, A., Marek, J., Pribytny, P.

“…In this paper we present the methodology for a fast 3-D electrothermal simulation based on relaxation method, developed and designed for Synopsys TCAD…”
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TCAD simulation methodology for 3-D electro-physical and optical analysis by Pribytny, P., Molnar, M., Chvala, A., Marek, J., Mikolasek, M., Donoval, D.

“…Numerical modeling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present a method for the…”
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Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation by Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.

“…New SPICE-like simulation models for a power MOSFET containing a dynamic link between electrical and thermal component descriptions were described. The…”
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Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT by Marek, J., Satka, A., Donoval, D., Molnar, M., Priesol, J., Chvala, A., Pribytny, P.

“…Impact of structure geometry and bulk traps on the performance of the n ++ GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional…”
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2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation by Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.

“…New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal…”
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