Search Results - "POLLOCK, J. T. A"

Plasma immersion ion implantation using plasmas generated by radio frequency techniques by TENDYS, J, DONNELLY, I. J, KENNY, M. J, POLLOCK, J. T. A

“…Medium density (3×109 cm−3) and high density (3×1012 cm−3) plasmas, generated by low and medium power rf techniques, have been used for the implantation of…”
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Surface modification of glass using xenon flashlamps by ROSE, A, POLLOCK, J. T. A

“…An assessment study is reported using a xenon flashlamp of pulse length 1.8 msec and 25 J cm super(-2) energy for the beneficial modification of glass…”
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Increased glassy carbon wear resistance by ion implantation by POLLOCK, J. T. A, CLISSOLD, R. A, FARRELLY, M

“…The wear resistance of glassy carbon is improved by implantation with 2 MeV helium ions. Possible structural changes causing the increased hardness and, hence,…”
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Dependence of room temperature fracture strength on strain-rate in sapphire by Pollock, J. T. A., Hurley, G. F.

“…Single crystal c-axis oriented sapphire filaments were tension tested as a function of surface conditions and environment, and as a function of strain rate…”
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Fracture strength in tension of a-axis filamentary sapphire grown by EFG by Pollock, J. T. A., Bailey, J. S.

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Filamentary sapphire: Part 1 Growth and microstructural characterisation by Pollock, J. T. A.

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Filamentary sapphire: Part 3 The growth of void-free sapphire filament at rates up to 3.0 cm/min by Pollock, J. T. A.

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Filamentary sapphire: Part 2 Fracture strength in tension by Pollock, J. T. A.

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Filamentary sapphire: Part 4 Dendritic growth by Pollock, J. T. A., Bailey, J. S.

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Low temperature martensitic transformations in In/Tl alloys by Pollock, J. T. A., King, H. W.

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On the directional solidification of eutectic systems from the melt by Pollock, J. T. A., Stormont, R.

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Comments on ?dependence of room temperature fracture strength on strain-rate in sapphire? by Pollock, J. T. A., Hurley, G. F.

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Germanium selective solar absorber surfaces by Thogersen, Paul P., Cocks, Franklin H., Pollock, John T. A., Jones, Phillip L.

“…Thin Ge films, produced by evaporation through 0.3, 1 and 3 torr pressures of Ar onto polished Al substrates, were found to exhibit selective absorption…”
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