Search Results - "POLING, B"

Dividing ASEAN and Conquering the South China Sea: China’s Financial Power Projection by Poling, Gregory B.

“…Dividing ASEAN and Conquering the South China Sea: China's Financial Power Projection, by Daniel C. O'Neill is reviewed…”
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Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors by Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

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Interprofessional Research Guidelines for Health Care Students by Poling, Deborah B., Wilson, Meg, Finke, Linda K., Bokhart, Gordon, Buchanan, Jeb

“…Abstract Although there has been a substantial increase in published research about interprofessional education for future health care providers in recent…”
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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors by Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

“…► EC−0.57eV deep level observed in all MOCVD-grown GaN HEMTs. ► EC−0.57eV level increases ∼5× with high temperature RF stressing. ► Pulsed I–V exhibit…”
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Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation by Poling, B.S., Via, G.D., Bole, K.D., Johnson, E.E., McDermott, J.M.

“…The reliability of commercial-off-the-shelf (COTS) GaN HEMTs was studied after irradiation using heavy ions of Neon (Ne), Silicon (Si), and Argon (Ar). Devices…”
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Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN by Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.

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Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs by Arehart, A R, Sasikumar, A, Via, G D, Winningham, B, Poling, B, Heller, E, Ringel, S A

“…New constant drain-current deep level optical/transient spectroscopy (CI D -DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high…”
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Evidence for causality between GaN RF HEMT degradation and the E sub(C)-0.57 eV trap in GaN by Arehart, A R, Sasikumar, A, Via, G D, Poling, B, Heller, E R, Ringel, SA

“…The degradation of industry-supplied GaN high electron mobility transistors (HEMTs) subjected to accelerated life testing (ALT) is directly related to…”
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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps by Sasikumar, A., Arehart, A.R., Via, G.D., Winningham, B., Poling, B., Heller, E., Ringel, S.A.

“…Quantitative defect spectroscopy was performed on low gate leakage operational S-band GaN HEMTs before and after RF accelerated life testing (ALT) to…”
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Vapor pressure prediction and correlation from the triple point to the critical point by Poling, Bruce E.

“…Vapor pressure constants for Wagner-type vapor pressure equations are reported for 11 compounds. The constants in these equations have been determined from…”
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Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN by Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.

“…The degradation of industry-supplied GaN high electron mobility transistors (HEMTs) subjected to accelerated life testing (ALT) is directly related to…”
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Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing by Poling, B.S., Brown, J.L., Heller, E.R., Stumpff, B., Beckman, J.A., Hilton, A.M.

“…•Hot electron or Channel Hot Carrier (CHC) degradation explored in AlGaN/GaN HEMTs.•Hot electron stress test reported for commercial foundry-level AlGaN/GaN…”
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1.8 MeV Proton Testing of Thermally Stabilized GaN HEMT RF Power Devices in Three Operational Modes by McCurdy, M. W., Schrimpf, R. D., Fleetwood, D. M., Bole, K., Poling, B. S.

“…We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes…”
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Vapor-liquid equilibrium data for the NH3-H2O system and its description with a modified cubic equation of state by SMOLEN, T. M, MANLEY, D. B, POLING, B. E

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Dividing Asean and Conquering the South China Sea: China's Financial Power Projection by Daniel C. O'Neill (review) by Poling, Gregory B

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Direct observation of 0.57 eV trap-related RF output power reduction in AIGaN/GaN high electron mobility transistors by AREHART, A. R, SASIKUMAR, A, MISHRA, U. K, RINGEL, S. A, RAJAN, S, VIA, G. D, POLING, B, WINNINGHAM, B, HELLER, E. R, BROWN, D, PEI, Y, RECHT, F

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Product distributions in the CO2-NH3-H2O system from liquid conductivity measurements by PELKIE, J. E, JOHN CONCANNON, P, MANLEY, D. B, POLING, B. E

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Avoiding the False China-U.S. Narrative in the South China Sea by Poling, Gregory B.

“…The South China Sea disputes are ultimately about the way the maritime realm will be governed in the twenty-first century—either according to the strictures of…”
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DISTANCE LEARNING--IT'S NOT FOR EVERYONE by Poling, E. B

“…One of many forms of Distance Learning is “Interactive Video Teleconferencing” (IVT). I was an early user of interactive video for both course teaching and…”
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Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation by Douglas, E. A., Pearton, S. J., Ren, F., Poling, B., Heller, E., Via, D.

“…AlGaN/GaN HEMTs with a gate length of 0.125 μm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited…”
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