Search Results - "PASSLACK, Matthias"

Benchmarking of III-V n-MOSFET Maturity and Feasibility for Future CMOS by Doornbos, Gerben, Passlack, Matthias

“…With the consideration of III-V channels for future CMOS, an urgent need for standard metrics to assess the maturity of III-V MOSFETs and to investigate their…”
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Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications by Passlack, Matthias, Droopad, Ravi, Brammertz, Guy

“…The suitability of oxide/GaAs interfaces for MOSFET applications has been investigated. Electrical properties of Ga 2 O 3 /GaAs interfaces, dielectric stacks…”
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A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study by Afzalian, Aryan, Doornbos, Gerben, Shen, Tzer-Min, Passlack, Matthias, Wu, Jeff

“…Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW)…”
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Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping by van Dal, Mark J. H., Vellianitis, Georgios, Duriez, Blandine, Doornbos, Gerben, Chih-Hua Hsieh, Bi-Hui Lee, Kai-Min Yin, Passlack, Matthias, Diaz, Carlos H.

“…We report scaled Ge p-channel FinFETs fabricated on a 300-mm Si wafer using the aspect-ratio-trapping technique. For long-channel devices, a combination of a…”
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Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization by van Dal, Mark J. H., Duriez, Blandine, Vellianitis, Georgios, Doornbos, Gerben, Passlack, Matthias, Yee-Chia Yeo, Diaz, Carlos H.

“…We demonstrate Ge enhancement-mode nMOS FinFETs fabricated on 300-mm Si wafers, incorporating an optimized gate-stack (interface trap density D it below 2 × 10…”
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Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors by Chiu, Hsin‐Yuan, Chao, Tzu‐Ang, Safron, Nathaniel S., Su, Sheng‐Kai, Liew, San‐Lin, Yun, Wei‐Sheng, Mao, Po‐Sen, Lin, Yu‐Tung, Hou, Vincent Duen‐Huei, Lee, Tung‐Ying, Chang, Wen‐Hao, Passlack, Matthias, Wong, Hon‐Sum Philip, Radu, Iuliana P., Wang, Han, Pitner, Gregory, Chien, Chao‐Hsin

“…Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy…”
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High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates by Doornbos, Gerben, Holland, Martin, Vellianitis, Georgios, Van Dal, Mark J. H., Duriez, Blandine, Oxland, Richard, Afzalian, Aryan, Ta-Kun Chen, Hsieh, Gordon, Passlack, Matthias, Yee-Chia Yeo

“…We report on the first realization of InAs n-channel gate-all-around nanowire MOSFETs on 300 mm Si substrates using a fully very large-scale integration…”
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Germanium-based transistors for future high performance and low power logic applications by Yee-Chia Yeo, Xiao Gong, van Dal, Mark J. H., Vellianitis, Georgios, Passlack, Matthias

“…High mobility channel materials could replace strained Si to enhance speed performance and/or reduce power consumption in future transistors. Ge has the…”
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Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf 0.5 Zr 0.5 O 2 /Metal Capacitors by Huang, Fei, Passlack, Matthias, Liew, San Lin, Yu, Zhouchangwan, Lin, Qing, Babadi, Aein, Hou, Vincent D.-H., McIntyre, Paul C., Wong, S. Simon

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Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth by Zhang, Zichen, Passlack, Matthias, Pitner, Gregory, Kuo, Cheng-Hsuan, Ueda, Scott T, Huang, James, Kashyap, Harshil, Wang, Victor, Spiegelman, Jacob, Lam, Kai-Tak, Liang, Yu-Chia, Liew, San Lin, Hsu, Chen-Feng, Kummel, Andrew C, Bandaru, Prabhakar

“…A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with…”
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Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study by Tasneem, Nujhat, Islam, Muhammad M., Wang, Zheng, Zhao, Zijian, Upadhyay, Navnidhi, Lombardo, Sarah F., Chen, Hang, Hur, Jae, Triyoso, Dina, Consiglio, Steven, Tapily, Kanda, Clark, Robert, Leusink, Gert, Kurinec, Santosh, Datta, Suman, Yu, Shimeng, Ni, Kai, Passlack, Matthias, Chern, Winston, Khan, Asif

“…While the theoretical maximum of the memory window <inline-formula> <tex-math notation="LaTeX">\Delta {V}_{t} </tex-math></inline-formula> in a ferroelectric…”
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Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs by Lin, Qing, Pitner, Gregory, Gilardi, Carlo, Su, Sheng-Kai, Zhang, Zichen, Chen, Edward, Bandaru, Prabhakar, Kummel, Andrew, Wang, Han, Passlack, Matthias, Mitra, Subhasish, Wong, H.-S. Philip

“…Carbon nanotube (CNT) transistors exemplify the fundamental tradeoff between desirable high mobility and undesirable leakage current due to the small effective…”
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Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors by Huang, Fei, Passlack, Matthias, Liew, San Lin, Yu, Zhouchangwan, Lin, Qing, Babadi, Aein, Hou, Vincent D.-H., McIntyre, Paul C., Wong, S. Simon

“…Ferroelectric properties of individual TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors have been measured for technologically relevant areas as small as 60 nm…”
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Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in   situ molecular beam epitaxy by Passlack, Matthias, Hong, Minghwei, Mannaerts, Joseph P., Opila, Robert L., Ren, Fan

“…The thermodynamic and photochemical stability of Ga2O3–GaAs interfaces fabricated using in situ multiple-chamber molecular beam epitaxy has been investigated…”
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Electrical Properties of Ga2O3/GaAs Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs by PASSLACK, Matthias, DROOPAD, Ravi, FEJES, Peter, LINGQUAN WANG

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Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping by Zhang, Zichen, Passlack, Matthias, Pitner, Gregory, Natani, Shreyam, Su, Sheng-Kai, Chao, Tzu-Ang, Liew, San Lin, Hou, Vincent D.-H., Hsu, Chen-Feng, Shipley, Wade E., Safron, Nathaniel, Doornbos, Gerben, Lee, Tsung-En, Radu, Iuliana, Kummel, Andrew C., Bandaru, Prabhakar, Wong, H.-S. Philip

“…Low-dimensional semiconductors such as one-dimensional carbon nanotubes could be used to shrink the gate length of metal–oxide–semiconductor field-effect…”
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High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure by Safron, Nathaniel, Chao, Tzu-Ang, Li, Shengman, Natani, Shreyam, Liew, San-Lin, Gilardi, Carlo, Chiu, Hsin-Yuan, Su, Sheng-Kai, Bechdolt, Andrew, Zeevi, Gilad, Zhang, Zichen, Passlack, Matthias, Hou, Vincent D.-H., Kashyap, Harshil, Chien, Chao-Hsin, Bandaru, Prabhakar, Kummel, Andrew, Wong, H.-S. Philip, Mitra, Subhasish, Pitner, Gregory, Radu, Iuliana

“…This work demonstrates the first nanosheet FET built on an array of dense aligned carbon nanotubes. In this device structure, the gate surrounds an aligned…”
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Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions by Passlack, Matthias, Wang, Shih-Wei, Doornbos, Gerben, Wang, Chien-Hsun, Contreras-Guerrero, Rocio, Edirisooriya, Madhavie, Rojas-Ramirez, Juan, Hsieh, Chih-Hua, Droopad, Ravi, Diaz, Carlos H.

“…One of the major challenges of high mobility complementary metal-oxide-semiconductor (CMOS) circuits is to meet off-current requirements of <100 pA/μm for low…”
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off-State Current Limits of Narrow Bandgap MOSFETs by Passlack, M.

“…OFF-state current limitations of two types of MOSFETs, namely 1) flatband-mode MOSFET and 2) inversion-mode MOSFET, with narrow bandgap channel materials such…”
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Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration by Holland, Martin, van Dal, Mark, Duriez, Blandine, Oxland, Richard, Vellianitis, Georgios, Doornbos, Gerben, Afzalian, Aryan, Chen, Ta-Kun, Hsieh, Chih-Hua, Ramvall, Peter, Vasen, Tim, Yeo, Yee-Chia, Passlack, Matthias

“…The integration of III-V semiconductors on silicon (Si) substrate has been an active field of research for more than 30 years. Various approaches have been…”
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