Search Results - "PARTIN, D. L"

Lead salt quantum effect structures by Partin, D.L.

“…Lead salt (IV-VI) compounds have been grown epitaxially by a variety of growth techniques, such as molecular-beam epitaxy and hot-wall epitaxy. Recently,…”
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Growth of high mobility InSb by metalorganic chemical vapor deposition by PARTIN, D. L, GREEN, L, HEREMANS, J

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Doping profiles for indium antimonide magnetoresistors by Partin, D.L., Heremans, J., Thrush, C.M.

“…Indium antimonide is of interest for magnetoresistors in position- and speed-sensing applications. These sensors are fabricated as thin-film elements in order…”
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The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors by Partin, D.L., Pelczynski, M., Cooke, P., Green, L., Heremans, J., Thrush, C.M.

“…Indium antimonide magnetoresistors are used as magnetic position sensors in very demanding automotive environments such as crankshaft and camshaft sensors for…”
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Growth of tin-doped indium antimonide for magnetoresistors by Partin, D. L., Green, L., Heremans, J., Thrush, C. M.

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Two-dimensional electron gas magnetic field sensors by HEREMANS, J, PARTIN, D. L, MORELLI, D. T, FULLER, B. K, THRUSH, C. M

“…We describe the use of accumulation layers of electron charge in applications as magnetoresistive devices. We consider two such systems: an InGaAs/InP…”
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Tunneling through narrow-gap semiconductor barriers by HEREMANS, J, PARTIN, D. L, DRESSELHAUS, P. D, LAX, B

“…Tunneling probability calculations through the gap of narrow-gap semiconductors reveal that a large increase in current density near zero bias can be expected…”
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Single quantum well lead-europium-selenide-telluride diode lasers by PARTIN, D. L

“…It is desirable to increase the operating temperature of long wavelength lead-chalcogenide diode lasers to simplify cooling system requirements. Recently,…”
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Temperature stable Hall effect sensors by Partin, D.L., Heremans, J.P., Schroeder, T., Thrush, C.M., Flores-Mena, L.A.

“…Magnetic field sensors are needed for high-accuracy position, angle, force, strain, torque, and current flow measurements. Molecular beam epitaxy was used to…”
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Diode lasers of lead-europium-selenide-telluride grown by molecular beam epitaxy by Partin, D. L.

“…It is desirable to extend the wavelength coverage of PbSnTe diode lasers to shorter wavelengths (λ<5 μm) and higher operating temperatures. Currently, this…”
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Transmission electron microscopy studies of bismuth films by Nahm, S., Salamanca-Riba, L., Partin, D. L., Heremans, J.

“…We have studied the structure of Bi films grown on BaF2 substrates as a function of the distance from the interface with the substrate. Close to the interface…”
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Growth and characterisation of lead-tin-ytterbium-telluride for diode lasers by PARTIN, D. L

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Lead-europium-selenide-telluride grown by molecular beam epitaxy by PARTIN, D. L

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Radiative recombination in PbTe quantum wells by HEYEN, E. T, HAGEROTT, M, NURMIKKO, A. V, PARTIN, D. L

“…Recombination of quasi-two-dimensional (2D) free-electron-hole pairs in PbTe/(Pb,Eu)Te multiple quantum wells has been studied in time-resolved…”
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Magnetic properties of EuTe-PbTe superlattices by HEREMANS, J, PARTIN, D. L

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Photoluminescence in PbTe-PbEuTeSe multiquantum wells by GOLTSOS, W, NAKAHARA, J, NURMIKKO, A. V, PARTIN, D. L

“…Infrared photoluminescence has been studied in a thin (92 Å) PbTe-PbEuTeSe multiquantum well structure. The spectra show good agreement with calculations for…”
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Growth and characterization of indium arsenide thin films by PARTIN, D. L, GREEN, L, MORELLI, D. T, HEREMANS, J, FULLER, B. K, THRUSH, C. M

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Wavelength coverage of lead-europium-selenide-telluride diode lasers by PARTIN, D. L, THRUSH, C. M

“…Diode lasers made from a new semiconductor material, Pb1−xEuxSeyTe1−y, have recently been developed for sensor applications. This material is grown by…”
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Growth and characterization of epitaxial bismuth films by PARTIN, D. L, HEREMANS, J, MORELLI, D. T, THRUSH, C. M, OLK, C. H, PERRY, T. A

“…The growth of the first thin (0.1-2 mu m) epitaxial films of pure bismuth using molecular-beam-epitaxy techniques is described. These structures were grown at…”
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Galvanomagnetic properties of lead-telluride quantum wells by HEREMANS, J, PARTIN, D. L, DRESSELHAUS, P. D, SHAYEGAN, M, DREW, H. D

“…The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-Å-wide wells sandwiched between lattice-matched…”
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