Search Results - "PALMSTRØM, C. J"

Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform by Suominen, H J, Kjaergaard, M, Hamilton, A R, Shabani, J, Palmstrøm, C J, Marcus, C M, Nichele, F

“…We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid…”
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Conductance-Matrix Symmetries of a Three-Terminal Hybrid Device by Ménard, G C, Anselmetti, G L R, Martinez, E A, Puglia, D, Malinowski, F K, Lee, J S, Choi, S, Pendharkar, M, Palmstrøm, C J, Flensberg, K, Marcus, C M, Casparis, L, Higginbotham, A P

“…We present conductance-matrix measurements of a three-terminal superconductor-semiconductor hybrid device consisting of two normal leads and one…”
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Selective-Area-Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks by Vaitiekėnas, S, Whiticar, A M, Deng, M-T, Krizek, F, Sestoft, J E, Palmstrøm, C J, Marti-Sanchez, S, Arbiol, J, Krogstrup, P, Casparis, L, Marcus, C M

“…We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing…”
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Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins by Yoneda, J, Otsuka, T, Nakajima, T, Takakura, T, Obata, T, Pioro-Ladrière, M, Lu, H, Palmstrøm, C J, Gossard, A C, Tarucha, S

“…We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the…”
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Quantized conductance doubling and hard gap in a two-dimensional semiconductor–superconductor heterostructure by Kjaergaard, M., Nichele, F., Suominen, H. J., Nowak, M. P., Wimmer, M., Akhmerov, A. R., Folk, J. A., Flensberg, K., Shabani, J., Palmstrøm, C. J., Marcus, C. M.

“…Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental…”
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Superconducting, insulating and anomalous metallic regimes in a gated two-dimensional semiconductor–superconductor array by Bøttcher, C. G. L., Nichele, F., Kjaergaard, M., Suominen, H. J., Shabani, J., Palmstrøm, C. J., Marcus, C. M.

“…The superconductor–insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains…”
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Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells by Pendharkar, M, Zhang, B, Wu, H, Zarassi, A, Zhang, P, Dempsey, C P, Lee, J S, Harrington, S D, Badawy, G, Gazibegovic, S, Op Het Veld, R L M, Rossi, M, Jung, J, Chen, A-H, Verheijen, M A, Hocevar, M, Bakkers, E P A M, Palmstrøm, C J, Frolov, S M

“…Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are…”
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Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films by Logan, J. A., Patel, S. J., Harrington, S. D., Polley, C. M., Schultz, B. D., Balasubramanian, T., Janotti, A., Mikkelsen, A., Palmstrøm, C. J.

“…The discovery of topological insulators, materials with bulk band gaps and protected cross-gap surface states in compounds such as Bi 2 Se 3 , has generated…”
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Mirage Andreev Spectra Generated by Mesoscopic Leads in Nanowire Quantum Dots by Su, Z, Zarassi, A, Hsu, J-F, San-Jose, P, Prada, E, Aguado, R, Lee, E J H, Gazibegovic, S, Op Het Veld, R L M, Car, D, Plissard, S R, Hocevar, M, Pendharkar, M, Lee, J S, Logan, J A, Palmstrøm, C J, Bakkers, E P A M, Frolov, S M

“…We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used:…”
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An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures by Shabani, J., Das Sarma, S., Palmstrøm, C. J.

“…We report on the first experimental observation of an apparent metal-insulator transition in a two-dimensional electron gas confined in an InAs quantum well…”
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Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum by Drachmann, A. C. C, Suominen, H. J, Kjaergaard, M, Shojaei, B, Palmstrøm, C. J, Marcus, C. M, Nichele, F

“…We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin…”
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Electrical detection of spin accumulation at a ferromagnet-semiconductor interface by Lou, X, Adelmann, C, Furis, M, Crooker, S A, Palmstrøm, C J, Crowell, P A

“…We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and -GaAs can be detected electrically. The…”
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Gating of high-mobility InAs metamorphic heterostructures by Shabani, J., McFadden, A. P., Shojaei, B., Palmstrøm, C. J.

“…We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with…”
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Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure by Hu, Q. O., Garlid, E. S., Crowell, P. A., Palmstrøm, C. J.

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Anisotropic spin relaxation in n -GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei by Harmon, N. J., Peterson, T. A., Geppert, C. C., Patel, S. J., Palmstrøm, C. J., Crowell, P. A., Flatté, M. E.

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Large second-order Josephson effect in planar superconductor-semiconductor junctions by Zhang, Po, Zarassi, Azarin, Jarjat, Lucas, Van de Sande, Vince, Pendharkar, Mihir, Lee, J. S., Dempsey, Connor P., McFadden, Anthony, Harrington, Sean David, Dong, Jason T., Wu, H., Chen, A. -H., Hocevar, Moïra, Palmstrøm, C. J., Frolov, Sergey M.

“…We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several…”
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Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors by Crooker, S. A., Garlid, E. S., Chantis, A. N., Smith, D. L., Reddy, K. S. M., Hu, Q. O., Kondo, T., Palmstrøm, C. J., Crowell, P. A.

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Spin injection across the Fe/GaAs interface: Role of interfacial ordering by Schultz, B. D., Marom, N., Naveh, D., Lou, X., Adelmann, C., Strand, J., Crowell, P. A., Kronik, L., Palmstrøm, C. J.

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Structural and electronic properties of molecular beam epitaxially grown Ni1+xTiSn films by Rice, A.D., Kawasaki, J.K., Verma, N., Pennachio, D.J., Schultz, B.D., Palmstrøm, C.J.

“…•Ni1+xTiSn films are successfully grown with molecular beam epitaxy.•X-ray diffraction shows (004) peaks that can be fit as two components.•TEM reveals regions…”
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Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices by Furis, M, Smith, D L, Kos, S, Garlid, E S, Reddy, K S M, Palmstrøm, C J, Crowell, P A, Crooker, S A

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