Search Results - "PALMETSHOFER, L"

Optically active erbium centers in silicon by Przybylinska, H, Jantsch, W, Suprun-Belevitch, Y, Stepikhova, M, Palmetshofer, L, Hendorfer, G, Kozanecki, A, Wilson, RJ, Sealy, BJ

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Range evaluation in SIMS depth profiles of Er-implantations in silicon by Mayerhofer, K., Foisner, H., Piplits, K., Hobler, G., Palmetshofer, L., Hutter, H.

“…In the last decade ion implantation of common dopants in silicon has been almost full characterised. However, data of inner transition elements are based on…”
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On the influence of hydrogen on the erbium-related luminescence in silicon by Kocher-Oberlehner, G., Jantsch, W., Palmetshofer, L., Ulyashin, A.

“…Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase…”
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On the environment of optically active Er in Si-electroluminescence devices by Lanzerstorfer, S., Palmetshofer, L., Jantsch, W., Stimmer, J.

“…We report sharp, atomlike electroluminescence spectra close to 1.54 μm from a low-dose (3.5×1018 cm−3) erbium-implanted silicon light-emitting diode operating…”
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Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements by Otto, G., Hobler, G., Palmetshofer, L., Mayerhofer, K., Piplits, K., Hutter, H.

“…While the dose-rate effect of ion implantation in Si is well known, a quantitative description of the amount of damage as a function of dose-rate has only been…”
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Damage and polymerization by ion bombardment of C60 by Kastner, J., Kuzmany, H., Palmetshofer, L.

“…Sublimated C60 fullerite films have been implanted with 160−300 keV H, He, C, and Ar ions with doses ranging from 1×1012 to 5×1016 cm−2. Raman scattering…”
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Range of ion-implanted rare earth elements in Si and SiO2 by PALMETSHOFER, L, GRITSCH, M, HOBLER, G

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Multiscale approach for the analysis of channeling profile measurements of ion implantation damage by Hobler, G., Otto, G., Kovač, D., Palmetshofer, L., Mayerhofer, K., Piplits, K.

“…Coupled binary collision and kinetic lattice Monte Carlo simulations are used to analyze 30keV B channeling profile measurements of damage from 30keV N…”
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Different Er centres in Si and their use for electroluminescent devices by Jantsch, W., Lanzerstorfer, S., Palmetshofer, L., Stepikhova, M., Preier, H.

“…At low temperatures, Er in Si produces a big variety of spectra in the 1.5 μm region which can be identified by high-resolution spectroscopy as being due to…”
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On the local structure of optically active Er centers in Si by Przybylinska, H., Hendorfer, G., Bruckner, M., Palmetshofer, L., Jantsch, W.

“…We report high resolution (<0.05 cm−1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the…”
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1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon by Stepikhova, M., Palmetshofer, L., Jantsch, W., von Bardeleben, H. J., Gaponenko, N. V.

“…We analyze the photoluminescence (PL) in nanoporous Si (po-Si) doped with Er by electrochemical deposition and by spin-on doping. Two kinds of optically active…”
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Direct excitation spectroscopy of Er centers in porous silicon by Stepikhova, M., Jantsch, W., Kocher, G., Palmetshofer, L., Schoisswohl, M., von Bardeleben, H. J.

“…We report direct excitation of optically active Er centers in porous Si. Excitation spectroscopy performed close to the intracenter I415/2→I411/2 and…”
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Low Z total reflection X-ray fluorescence analysis — challenges and answers by Streli, C., Kregsamer, P., Wobrauschek, P., Gatterbauer, H., Pianetta, P., Pahlke, S., Fabry, L., Palmetshofer, L., Schmeling, M.

“…Low Z elements, like C, O, ... Al are difficult to measure, due to the lack of suitable low-energy photons for efficient excitation using standard X-ray tubes,…”
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Room-temperature photoluminescence excitation spectroscopy of Er3+ ions in Er- and (Er+Yb)-doped SiO2 films by Kozanecki, A., Przybylinska, H., Jantsch, W., Palmetshofer, L.

“…We apply photoluminescence excitation spectroscopy to study the efficiency of excitation at 960–990 nm of the 1.54 μm emission of erbium implanted into SiO2…”
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Nonuniform-channel MOS device by Lugstein, A., Brezna, W., Stockinger, M., Goebel, B., Palmetshofer, L., Bertagnolli, E.

“…This paper presents a novel technology of lateral profile engineering addressing nonuniform-channel MOS devices. For the first time MOS devices with highly…”
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Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon by Kozanecki, A., Stepikhova, M., Lanzerstorfer, S., Jantsch, W., Palmetshofer, L., Sealy, B. J., Jeynes, C.

“…We investigate photoluminescence (PL) and photoluminescence excitation spectroscopy of Er3+ ions implanted into SiO2 films thermally grown on silicon wafers…”
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Luminescence enhancement by hydrogenation of Si:Er,O by Kocher-Oberlehner, G., Jantsch, W., Palmetshofer, L., Ulyashin, A.

“…Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra…”
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Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon by JOB, R, ULYASHIN, A. G, FAHRNER, W. R, IVANOV, A. I, PALMETSHOFER, L

“…Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of hydrogen- and helium-implanted…”
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Ion bombardment of C 60: Raman study of amorphization and polymerization by Palmetshofer, L., Kastner, J.

“…C 60 fullerite films on Si substrates have been bombarded with H, He, C and Ar ions with energies between 60 and 600 keV and doses ranging from 1 × 10 12 to 5…”
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Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by rutherford backscattering spectrometry by Klockenkämper, R., von Bohlen, A., Becker, H. W., Palmetshofer, L.

“…Thin and shallow layers of some 50–150 nm were produced by ion implantation of Co ions in Si wafers and afterwards characterized by concentration–depth…”
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