Search Results - "PAILY, Roy"
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Non-Enzymatic Glucose Detection Based on GO/Ag Nanocomposite in SiO2 Trench Embedded Field Effect Transistor
Published in IEEE sensors journal (15-08-2022)“…This study demonstrates the application of graphene oxide-silver (GO/Ag) nanocomposite to develop a non-enzymatic high-performance glucose-sensing field-effect…”
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Design Considerations for Efficient Realization of Rectifiers in Microscale Wireless Power Transfer Systems: A Review
Published in IEEE sensors journal (15-09-2023)“…To ensure optimal power transfer, a wireless power transfer (WPT) system requires an efficient low-cost rectifier for realizing a self-powered wireless sensor…”
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3
Stiction Mitigation of Nanoparticles in Magnetically Targeted Drug Delivery System
Published in IEEE transactions on magnetics (01-03-2022)“…This article addresses the stiction issue of magnetic nanoparticles (MNPs) in a targeted drug delivery system (TDDS). In a magnetically actuated TDDS, the MNPs…”
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Two-Dimensional MoS2-Based Electrochemical Biosensor for Highly Selective Detection of Glutathione
Published in IEEE sensors journal (01-07-2020)“…Glutathione (GSH) recently emerges as an important biomarker for cancers and various disease detection as its concentration varies in the <inline-formula>…”
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5
High-Throughput Turbo Decoder With Parallel Architecture for LTE Wireless Communication Standards
Published in IEEE transactions on circuits and systems. I, Regular papers (01-09-2014)“…This work focuses on the VLSI design aspect of high- speed maximum a posteriori (MAP) probability decoders which are intrinsic building-blocks of parallel…”
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Non-Enzymatic Urea Sensing With Cys-GO Using Device With Silicon Dioxide Trench
Published in IEEE sensors journal (15-08-2022)“…This work illustrates a high-performance Urea sensor using Cys-GO (L-Cysteine functionalized GO) as a sensing material. The device is fabricated using the…”
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Fabrication of Glutathione-S-Transferase-ZnO Nanoconjugate Ensemble FET Device for Detection of Glutathione
Published in IEEE transactions on electron devices (01-03-2021)“…This article reports fabrication and characterization of field effect transistor (FET) device consisting of zinc oxide (ZnO)…”
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8
Improvement in Resilience of AES Design With Reconfigured CFB Mode Against Power Attacks
Published in IEEE transactions on very large scale integration (VLSI) systems (01-11-2024)“…Advanced encryption standard (AES) is used to secure the communication process on the Internet-of-Things (IoT) hardware. It is implementable in various 128-bit…”
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Gas Sensors Based on Drop-Casted ZnO Nanowires and Micro-Cantilever Printed Ag Contacts
Published in IEEE sensors journal (01-05-2020)“…In this work, we report the usage of micro-cantilever printed silver nanoparticles (AgNP) contact pads for fabrication of ZnO nanowire (NW) Schottky…”
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10
Magneto-Semiconductor Resistor for Hydrogen Detection
Published in IEEE sensors journal (01-04-2021)“…The fabrication and testing of hierarchical architecture based Zinc Ferrite-Zinc oxide (ZnFe 2 O 4 -ZnO) magnetic semiconductor (MS) sensor, for the detection…”
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Securing AES designs against power analysis attacks: A survey
Published in IEEE internet of things journal (15-08-2023)“…With the advent of Internet of Things (IoT), the call for hardware security has been seriously demanding due to the risks of side-channel attacks from…”
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12
Time-Varying Magnetic Field to Enhance the Navigation of Magnetic Microparticles in a Bifurcated Channel
Published in IEEE magnetics letters (2022)“…This letter investigates the navigation of magnetic microparticles (MMPs) in a Y-shaped microfluidic channel under the influence of an external magnetic field…”
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13
Power Side-Channel Attacks on Crypto-Core Based on RISC-V ISA for High-Security Applications
Published in IEEE access (2024)“…With the advancement of IoT edge devices, the threat to sensitive data processed at these devices is increasing. This research aims to enhance processor's…”
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14
A Junctionless Silicon Carbide Transistor for Harsh Environment Applications
Published in Journal of electronic materials (01-10-2021)“…Silicon carbide (SiC) is the material of choice for high-temperature, high-voltage, and other harsh environment applications in high-energy physics, outer…”
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15
Carbon Monoxide Sensor Based on Printed ZnO
Published in IEEE sensors journal (01-06-2022)“…This work describes the fabrication of a Carbon monoxide (CO) sensor based on a Zinc oxide (ZnO) Schottky diode that can detect CO at low concentrations as low…”
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16
Impact of high-k spacer on device performance of a junctionless transistor
Published in Journal of computational electronics (01-03-2013)“…The impact of spacer dielectric on both sides of gate oxide on the device performance of a symmetric double-gate junctionless transistor (DGJLT) is reported…”
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Abrasion tolerant, non-stretchable and super-water-repellent conductive & ultrasensitive pattern for identifying slow, fast, weak and strong human motions under diverse conditions
Published in Materials horizons (04-10-2021)“…The conversion of mechanical deformation into electrical signals is a widely used principle for various relevant applications. Facile & scalable fabrication,…”
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18
Fabrication and Electrical Characterization of Printed Microresistors of Silver Nanoparticles Using Microcantilever-Based Printing Technology
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-01-2020)“…In this article, we report the fabrication of printed microresistors (PMRs) of silver nanoparticles (AgNPs) based on microcantilever-based printing technology…”
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19
Room Temperature Hydrogen Gas Sensing using Zn2TiO4 Thin Film
Published in IEEE sensors letters (01-02-2023)“…Zn 2 TiO 4 thin film is formed on Si/SiO 2 substrate by a spin coating process and Al is used as electrodes. This device has excellent hydrogen (H 2 ) gas…”
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A surface-potential based drain current model for short-channel symmetric double-gate junctionless transistor
Published in Journal of computational electronics (01-03-2016)“…Junctionless transistors, which do not have any pn junction in the source-channel-drain path have become an attractive candidate in sub-20 nm regime. They have…”
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