Search Results - "PACCAGNELLA, A."

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    Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs by Faccio, F., Michelis, S., Cornale, D., Paccagnella, A., Gerardin, S.

    Published in IEEE transactions on nuclear science (01-12-2015)
    “…The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total…”
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    Monitoring of Lactococcus Lactis Growth Based on Reduced-Graphene Oxide TFT for Dairy Industry Applications by Franchin, L., Casalini, S., Cester, A., Paccagnella, A., Bonaldo, S.

    Published in IEEE sensors journal (01-09-2024)
    “…Thin-film transistors (TFTs) are a cutting-edge technology for biosensing applications due to their fast response time, low signal-to-noise ratio, and…”
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    OmegaWINGS: The First Complete Census of Post-starburst Galaxies in Clusters in the Local Universe by Paccagnella, A., Vulcani, B., Poggianti, B. M., Fritz, J., Fasano, G., Moretti, A., Jaffé, Yara L., Biviano, A., Gullieuszik, M., Bettoni, D., Cava, A., Couch, W., D'Onofrio, M.

    Published in The Astrophysical journal (01-04-2017)
    “…Galaxies that abruptly interrupt their star formation in present recognizable features in their spectra (no emission and Hδ in absorption) and are called…”
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    Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells by Gerardin, S., Bagatin, M., Paccagnella, A., Beltrami, S., Benvenuti, A., Cazzaniga, C.

    Published in IEEE transactions on nuclear science (01-04-2024)
    “…The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors…”
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    Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories by Bagatin, M., Gerardin, S., Paccagnella, A., Beltrami, S., Camerlenghi, E., Bertuccio, M., Costantino, A., Zadeh, A., Ferlet-Cavrois, V., Santin, G., Daly, E.

    Published in IEEE transactions on nuclear science (01-01-2018)
    “…The effects of heavy-ion irradiation on 3-D NAND flash memory cells are investigated. Threshold voltage distributions are studied before and after exposure, as…”
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    Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses by Bonaldo, S., Martinella, C., Race, S., Für, N., Mattiazzo, S., Bagatin, M., Gerardin, S., Paccagnella, A., Grossner, U.

    Published in IEEE transactions on nuclear science (01-04-2024)
    “…Total-ionizing dose (TID) and displacement damage (DD) are investigated in SiC power MOSFETs at ultrahigh doses with 10-keV X-ray and 3-MeV protons…”
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    The star formation history of galaxies: the role of galaxy mass, morphology and environment by Guglielmo, Valentina, Poggianti, Bianca M., Moretti, Alessia, Fritz, Jacopo, Calvi, Rosa, Vulcani, Benedetta, Fasano, Giovanni, Paccagnella, Angela

    “…We analyse the star formation history (SFH) of galaxies as a function of present-day environment, galaxy stellar mass and morphology. The SFH is derived by…”
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    Secondary Particles Generated by Protons in 3-D nand Flash Memories by Bagatin, M., Gerardin, S., Paccagnella, A., Costantino, A., Ferlet-Cavrois, V., Santin, G., Muschitiello, M., Pesce, A., Beltrami, S.

    Published in IEEE transactions on nuclear science (01-07-2022)
    “…We studied the secondary byproducts created by high-energy protons inside a single-event upset (SEU) detector based on 3-D NAND Flash memories, extending the…”
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    Atmospheric Neutron Soft Errors in 3-D NAND Flash Memories by Bagatin, M., Gerardin, S., Paccagnella, A., Beltrami, S., Cazzaniga, C., Frost, C. D.

    Published in IEEE transactions on nuclear science (01-07-2019)
    “…The sensitivity of vertical-channel 3-D NAND flash memories to wide-energy spectrum neutrons was investigated. The effects of neutron exposure on a 3-D…”
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    A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories by Gerardin, S., Bagatin, M., Paccagnella, A., Beltrami, S., Costantino, A., Santin, G., Pesce, A., Ferlet-Cavrois, V., Voss, K.

    Published in IEEE transactions on nuclear science (01-05-2021)
    “…A heavy-ion beam monitor based on 3-D NAND flash memories was designed and tested with heavy ions at high energy and low linear energy transfer (LET). The…”
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    The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors by Stockman, A., Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E., Moens, P., Bakeroot, B.

    Published in IEEE transactions on electron devices (01-01-2019)
    “…Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both…”
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    Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes by Bagatin, M., Gerardin, S., Paccagnella, A., Santin, G., Costantino, A., Ferlet-Cavrois, V., Muschitiello, M., Beltrami, S., Voss, K. O., Trautmann, C.

    Published in IEEE transactions on nuclear science (01-03-2022)
    “…The deposition of energy in large and small sensitive volumes is studied after ultrahigh energy heavy-ion irradiation. We demonstrate that the energy…”
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    Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs by Gerardin, S., Bagatin, M., Cornale, D., Ding, L., Mattiazzo, S., Paccagnella, A., Faccio, F., Michelis, S.

    Published in IEEE transactions on nuclear science (01-12-2015)
    “…We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing…”
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    Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells by Alayan, M., Bagatin, M., Gerardin, S., Paccagnella, A., Larcher, L., Vianello, E., Nowak, E., De Salvo, B., Perniola, L.

    Published in IEEE transactions on nuclear science (01-08-2017)
    “…HfO 2 -based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the…”
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    Characterizing High-Energy Ion Beams With PIPS Detectors by Bagatin, M., Ferlet-Cavrois, V., Gerardin, S., Muschitiello, M., Paccagnella, A., Costantino, A., Santin, G., Boatella Polo, C., Alia, R. Garcia, Fernandez Martinez, P., Kastriotou, M.

    Published in IEEE transactions on nuclear science (01-07-2020)
    “…The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at…”
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    Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation by De Santi, C., Meneghini, M., Trivellin, N., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E.

    Published in Applied physics letters (24-11-2014)
    “…This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton…”
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