Search Results - "Périchaud, Isabelle"

Hydrogen passivation of defects in multicrystalline silicon solar cells by Martinuzzi, Santo, Périchaud, Isabelle, Warchol, François

“…The knowledge of how hydrogen interacts with defects and impurities in silicon is crucial for the understanding of device performance, especially for solar…”
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Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging by Neves Dias, Serge William, Becker, Maike, Ouaddah, Hadjer, Périchaud, Isabelle, Reinhart, Guillaume, Mangelinck-Noël, Nathalie, Regula, Gabrielle

“…To study dislocation dynamics in a model sample, an intrinsic float zone (FZ) Si wafer is chosen as seed to initiate directional solidification. During the…”
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Role of Impurities in Silicon Solidification and Electrical Properties Studied by Complementary In Situ and Ex Situ Methods by Ouaddah, Hadjer, Périchaud, Isabelle, Barakel, Damien, Palais, Olivier, Di Sabatino, Marisa, Reinhart, Guillaume, Regula, Gabrielle, Mangelinck-Noël, Nathalie

“…All silicon (Si) ingot fabrication processes share challenges to control grain structure, defect, and impurity contamination during the solidification step to…”
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Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon by Tanay, Florent, Dubois, Sebastien, Veirman, Jordi, Enjalbert, Nicolas, Stendera, Julie, Perichaud, Isabelle

“…The thermal donor (TD) generation in dopant-rich compensated Czochralski silicon was studied by pulling an ingot from a feedstock containing large amounts of…”
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X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation by Ouaddah, Hadjer, Becker, Maike, Riberi-Béridot, Thècle, Tsoutsouva, Maria, Stamelou, Vasiliki, Regula, Gabrielle, Reinhart, Guillaume, Périchaud, Isabelle, Guittonneau, Fabrice, Barrallier, Laurent, Valade, Jean-Paul, Rack, Alexander, Boller, Elodie, Baruchel, José, Mangelinck-Noël, Nathalie

“…To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic…”
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X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation by Ouaddah, Hadjer, Becker, Maike, Riberi-Béridot, Thècle, Tsoutsouva, Maria, Stamelou, Vasiliki, Regula, Gabrielle, Reinhart, Guillaume, Périchaud, Isabelle, Guittonneau, Fabrice, Barrallier, Laurent, Valade, Jean-Paul, Rack, Alexander, Boller, Elodie, Baruchel, Jose, Mangelinck-Noël, Nathalie

“…To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic…”
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Gettering of impurities in solar silicon by PERICHAUD, I

“…Electrical properties of crystalline silicon wafers used for photovoltaı̈cs are degraded by metallic impurity atoms. Such atoms are introduced during the…”
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Limiting factors of phosphorous external gettering efficiency in multicrystalline silicon by Perichaud, Isabelle, Floret, Francis, Martinuzzi, Santo

“…External gettering by phosphorus diffusion is used to improve the minority carrier diffusion lengths L sub(n) in multicrystalline silicon wafers obtained by…”
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Gettering effect of aluminium in mc-Si and c-Si wafers and in solar cells by Porre, O., Martinuzzi, S., Pasquinelli, M., Perichaud, I., Gay, N.

“…It is well admitted that the deposition of a thick (/spl ges/1 pm) aluminium layer on a silicon wafer followed by alloying at T/spl ges/850/spl deg/C is able…”
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From mc-Si material made by cold crucible continuous pulling to solar cells by Martinuzzi, S., Perichaud, I., Clerc, L., Bacon, M., Floret, F., Sarti, D., Dour, G., Quan Nam Le, Goaer, G., Durand, F.

“…Multicrystalline-Si ingots were prepared by a cold crucible continuous pulling technique and 230 /spl mu/m thick wafers were cut using a wire saw. By means of…”
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