Search Results - "Pässler, R"

Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe by Pässler, R.

“…Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from…”
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Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb by Pässler, R.

“…Characteristic non-Debye behaviors of low-temperature heat capacities of GaP, GaAs, GaSb, InP, InAs, and InSb, which are manifested above all in form of…”
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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials by Pässler, R.

“…We perform analyses of cryogenic heat capacity data sets, that are available from thermo‐physical literature for group‐IV materials (diamond, Si, Ge, and…”
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Representative hybrid model used for analyses of heat capacities of group-IV, III-V, and II-VI materials by Pssler, R

“…Characteristic non‐Debye features inherent to the dispersion‐related hybrid model, which had been devised for the sake of physically adequate representations…”
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Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots by ORTNER, G, SCHWAB, M, BAYER, M, PÄSSLER, R, FAFARD, S, WASILEWSKI, Z, HAWRYLAK, P, FORCHEL, A

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Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors by P ssler, R.

“…The temperature dependencies of the fundamental energy gaps of group‐IV, III–V, and II–VI materials are fitted by means of a relatively simple analytical…”
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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials: Limiting Debye temperature behavior detected from cryogenic heat capacity data by Pässler, R.

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Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors by P ssler, R.

“…Novel analytical models describing the temperature dependencies of fundamental energy gaps in semiconductors are shown to be consistent with basic equations…”
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Temperature and composition dependence of exciton peak positions and band gap energies of Zn1-xMgx(≤0.19)Se epitaxial films by PÄSSLER, R, BLASCHTA, F, GRIEBL, E, PAPAGELIS, K, HASERER, B, REISINGER, T, VES, S, GEBHARDT, W

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Non-Debye behaviours of heat capacities of cubic II–VI materials by Paessler, R

“…On the basis of an appropriate four-oscillator version of a representative dispersion-related hybrid model we perform detailed analyses of isobaric heat…”
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Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon by Pässler, R.

“…Novel analytical descriptions of the temperature dependence of the indirect energy gap in silicon are compared with conventional models due to Varshni […”
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Semi-empirical descriptions of temperature dependences of band gaps in semiconductors by Passler, R

“…Starting from general foundations of the semi‐empirical theory of monotonic temperature dependences of band gaps in semiconductors, we devote ourselves in this…”
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Nonradiative multiphonon capture of thermal and hot carriers by deep traps in semiconductors for the alternative regimes of small and large lattice relaxation by Pässler, R.

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Comparison between static and adiabatic coupling mechanisms for nonradiative multiphonon transitions in semiclassical approximation I. Tunnelling at small relaxation by Pässler, R.

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Comparison between static and adiabatic coupling mechanisms for nonradiative multiphonon transitions in semiclassical approximation: II. Activated transitions by Pässler, R.

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Comparison between static and adiabatic coupling mechanisms for nonradiative multiphonon transitions in semiclassical approximation. II : semiclassical approximation by PÄSSLER, R

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Nonradiative multiphonon transitions described by static versus adiabatic coupling scheme in comparison with Landau-Zener's theory by Pässler, R.

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Description of nonradiative multiphonon transitions in the static coupling scheme: I. Foundations by Pässler, R.

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Correlation of electrical and optical properties of the vanadium-related C level in silicon by Pässler, R., Pettersson, H., Grimmeiss, H. G., Schmalz, K.

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Temperature and Composition Dependence of Exciton Peak Positions and Band Gap Energies of Zn1-xMgx(≤0.19Se Epitaxial Films by Pässler, R., Blaschta, F., Griebl, E., Papagelis, K., Haserer, B., Reisinger, T., Ves, S., Gebhardt, W.

“…The temperature dependence of the 1s exciton energy has been measured in Zn1—xMgxSe epitaxial films at compositions x = 0, 0.07, 0.12, and 0.19 from 2 K up to…”
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