Search Results - "Ozawa, O."

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  1. 1

    Columella Elongation Surgery Outcome in Complete Bilateral Cleft Lip and Palate by Broll, Daiana, de Souza, Telma V., Nobrega, Eudes, Luz, Cristiane L., Repeke, Carlos E., da Silva, Luiz C., Garib, Daniela G., Ozawa, Terumi O.

    “…BACKGROUND:The evaluation of surgical outcomes is needed to achieve excellence in nasal reconstruction of patients with complete bilateral cleft lip and palate…”
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    Journal Article
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    Analysis of Arch Widths in Patients With Isolated Pierre Robin Sequence by Ohashi, A. S. C., Varela, T., Marques, I. L., Brosco, T. V. S., Oliveira, R. P., Garib, D. G., Ozawa, T. O.

    Published in The Cleft palate-craniofacial journal (01-01-2018)
    “…Objective: To compare arch widths of patients with isolated Robin sequence (IRS) operated using modified von Langenbeck technique and modified Furlow…”
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    Journal Article
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    Development of Radiation Resistant Monitoring Camera System by Takeuchi, T., Otsuka, N., Watanabe, T., Tanaka, S., Ozawa, O., Komanome, H., Ueno, S., Tsuchiya, K.

    “…In response to the lesson of the Fukushima Daiichi nuclear accident, we started a development of a radiation-resistant CMOS color camera system. In order to…”
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    Conference Proceeding
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    Electrical properties of a triode-like silicon vertical-channel JFET by Ozawa, O.

    Published in IEEE transactions on electron devices (01-11-1980)
    “…A transition from triode-like to pentode-like I_{d}-V_{d} characteristics is observed in diffusion-type vertical JFET's by varying the channel impurity…”
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    Journal Article
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    Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET's by Ishiuchi, H., Matsumoto, Y., Sawada, S., Ozawa, O.

    Published in IEEE transactions on electron devices (01-11-1985)
    “…Intrinsic capacitance of lightly doped drain (LDD) MOSFET's is measured by means of a four-terminal method without using any on-chip measurement circuits. The…”
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    Journal Article
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    Secondary bone graft and eruption of the permanent canine in patients with alveolar clefts: literature review and case report by da Silva Filho, O G, Teles, S G, Ozawa, T O, Filho, L C

    Published in The Angle orthodontist (01-04-2000)
    “…This paper emphasizes the important role that secondary bone grafting plays on the treatment of patients with alveolar clefts. The authors present a literature…”
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    Journal Article
  10. 10

    Temperature dependence of triodelike JFET drain current after pinchoff by Ozawa, O.

    Published in IEEE transactions on electron devices (01-06-1977)
    “…The drain current of a triodelike JFET exhibits both positive and negative temperature dependence, depending on the current density. For drain current smaller…”
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    Journal Article
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    An experimental 4-Mbit CMOS DRAM by Furuyama, T., Ohsawa, T., Watanabe, Y., Ishiuchi, H., Watanabe, T., Tanaka, T., Natori, K., Ozawa, O.

    Published in IEEE journal of solid-state circuits (01-10-1986)
    “…A 4-Mb dynamic RAM has been designed and fabricated using 1.0-/spl mu/m twin-tub CMOS technology. The memory array consists of trenched n-channel…”
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    Journal Article
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    Core outcomes for orofacial clefts: reconciling traditional and ICHOM minimum datasets by Mossey, Peter A, Lai, Jason, Meazzini, Maria Costanza, Breugem, Corstiaan, Mark, Hans, Mink van der Molen, Aebele B, Persson, Martin, Davies, Gareth, Ozawa, Terumi Okada

    Published in European journal of orthodontics (30-11-2023)
    “…This retrospective study sought voluntary participation from leading cleft centres from Europe and Brazil regarding core outcome measures. The results of this…”
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    Journal Article
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    A 1-Mbit CMOS DRAM with fast page mode and static column mode by Saito, S., Fujii, S., Okada, Y., Shinozaki, S., Natori, K., Ozawa, O.

    Published in IEEE journal of solid-state circuits (01-10-1985)
    “…A 1-Mb words/spl times/1-bit CMOS dynamic RAM fabricated with an advanced n-well CMOS technology is described. More than 2.2 million devices are integrated on…”
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    Journal Article
  14. 14

    Low Power SOC Design Using Partial-Trench-Isolation ABC SOI (PTI-ABC SOI) for Sub-100-nm LSTP Technology by Ozawa, O., Fukuoka, K., Igarashi, Y., Kuraishi, T., Yasu, Y., Maki, Y., Ipposhi, T., Ochiai, T., Shirahata, M., Ishibashi, K.

    “…The bodies of partially depleted SOI devices are selectively biased so that circuits operate at low supply voltages without area overhead. Applying forward…”
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    Conference Proceeding
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    A vertical FET with self-aligned ion-implanted source and gate regions by Ozawa, O., Iwasaki, H.

    Published in IEEE transactions on electron devices (01-01-1978)
    “…A new self-aligned vertical channel JFET has been fabricated using ion-implantation and LOCOS techniques. This device required four photolithography processes…”
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    Journal Article
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    A vertical channel JFET fabricated using silicon planar technology by Ozawa, O., Iwasaki, H.

    Published in IEEE journal of solid-state circuits (01-08-1976)
    “…A vertical channel JFET with a new structure was fabricated using a self-aligned process and doped polysilicon technology. This structure is suitable for a…”
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    Journal Article
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    Electrical properties for MOS LSI's fabricated using stacked Oxide SWAMI technology by Sawada, S., Higuchi, T., Mizuno, T., Shinozaki, S., Ozawa, O.

    Published in IEEE transactions on electron devices (01-01-1985)
    “…The stacked oxide SWAMI (STOMI) process, in which the SWAMI process is improved by employing CVD oxide deposition on the first nitride film, has been…”
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    Journal Article
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    A low-power sub 100 ns 256K bit dynamic RAM by Fuji, S., Natori, K., Furuyama, T., Saito, S., Toda, H., Tanaka, T., Ozawa, O.

    Published in IEEE journal of solid-state circuits (01-10-1983)
    “…A 256K-word /spl times/ 1-bit NMOS dynamic RAM using 2-/spl mu/m design rules and MoSi/SUB 2/ gate technology is described. A marked low-power dissipation of…”
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    Journal Article
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    A new degradation mechanism of current drivability and reliability of asymmetrical LDDMOSFET's by Mizuno, T., Matsumoto, Y., Sawada, S., Shinozaki, S., Ozawa, O.

    “…Characteristics of asymmetrical LDDMOSFET's fabricated by inclined n - ion implantation have been investigated. It has been newly found that current…”
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    Conference Proceeding