Search Results - "Owens, R.P."

Quasi-Static Characteristics of Microstrip on an Anisotropic Sapphire Substrate by Owens, R.P., Aitken, J.E., Edwards, T.C.

“…The well-defined and repeatable electrical properties of single-crystal sapphire make it an attractive substrate material for microstrip, but its dielectric…”
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2-18-GHz Dispersion Measurements on 10-100-Omega Microstrip Lines on Sapphire by Edwards, T.C., Owens, R.P.

“…Dispersion measurements on microstrip lines with characteristic impedances between 10 and 100 Omega are described, covering the frequency range 2-18 GHz…”
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Microwave Equivalent-Circuit Parameters of Gunn-Effect-Device Packages by Owens, R.P., Cawsey, D.

“…The packages in which Gunn-effect devices are commonly mounted are found to have parasitic reactances which are significant at X-band. An accurate knowledge of…”
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Contributors, Aug. 1976 by Aitken, J.E., Araki, K., Brodwin, M.E., Edwards, T.C., Koyama, T., Matz, J.E., Naito, Y., Owens, R.P., Taflove, A.

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Terminal Negative Resistance of X Band Gunn Diodes by Brunt, C. A., Cawsey, D., Owens, R.P.

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Contributors, Nov. 1970 by Berson, B.E., Bosch, B.G., Bowers, H.C., Cawsey, D., Kern K. N. Chang, Conn, D.R., Decker, D.R., Dunn, C.N., Engelmann, R.W.H., Enstrom, R.E., Evans, W.J., Frank, R.L., Fray, S.J., Frey, W., Gibbs, S.E., Greifing, P.T., Haddad, G.I., Isobe, T., Ito, Y., Khan, P.J., Komizo, H., Kondo, H., Walter H. Ku, Lee A. MacKenzie, Marx, R.E., Midford, T.A., Mitchell, H.R., Mouthaan, K., Nagano, S., Narayan, S.Y., Osborne, T.L., Owens, R.P., Pence, I.W., Perlman, B.S., Plants, S.T., Pollmann, H., Prager, H.J., Reynolds, J.F., Rosenbaum, F.J., Sasagawa, S., Scherer, E.F., Schroeder, W.E., Steinbrecher, D.H., Sterzer, F., Stewart, J.A.C., Taylor, B.C., Tokida, M., Wei Ching Tsai, Upadhyayula, C.L., Weisbrod, S.

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