Search Results - "Oussalah, S."

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer by Filali, W., Garoudja, E., Oussalah, S., Mekheldi, M., Sengouga, N., Henini, M.

“…We report the capacitance-voltage ( C – V ) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is…”
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Analog design-for-testability technique for first-order sigma delta ADC by Dendouga, A., Hafiane, M.L., Bouguechal, N., Oussalah, S., Barra, S., Kouda, S.

“…In this paper, a design for testability of 10 bits continuous time sigma delta ADC is presented. This new full test technique provides: simple way, 2 external…”
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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies) by Djezzar, B., Oussalah, S., Smatti, A.

“…In this paper, we propose a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called Oxide-Trap based on Charge-Pumping…”
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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies) by Djezzar, B., Smatti, A., Oussalah, S.

“…In this paper, the Oxide-Trap based on Charge-Pumping (OTCP) extraction method is extended from high frequencies (HFs) to low frequencies (LFs). As a…”
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Optical parameters extraction of zinc oxide thin films doped with manganese using an innovative technique based on the dragonfly algorithm and their correlation to the structural properties by Settara, K., Lekoui, F., Akkari, H., Garoudja, E., Amrani, R., Filali, W., Oussalah, S., Hassani, S.

“…Pure zinc oxide (ZnO) thin films, along with manganese (Mn) doped counterparts, were produced using rapid thermal evaporation technique on ordinary glass…”
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Dielectric testing for integrated power devices by Oussalah, S., Jerisian, R.

“…The integrated power devices inter-layer isolation needs an over micron thick dielectric. The reliability testing of dielectric films need to apply high…”
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Mesure statistique de la résistance de contact d'une grille sérigraphiée pour cellules solaires au silicium multicristallin by CHELLI, F, TATA-IGHIL, R, SALI, S, OUSSALAH, S, BOUMAOUR, M, TAYOUR, F, SI-AHMED, Y

“…La métallisation par sérigraphie est une des étapes les plus importantes dans la technologie d’élaboration des cellules solaires pour une production à grande…”
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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick \hbox-Based Dielectric Layers? by Oussalah, S., Djezzar, B.

“…The aim of this paper is to investigate the reliability of thick oxides that are dedicated to the power integrated device fabrication. The field dependence of…”
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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO@@d2@-Based Dielectric Layers? by Oussalah, S, Djezzar, B

“…The aim of this paper is to investigate the reliability of thick oxides that are dedicated to the power integrated device fabrication. The field dependence of…”
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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO sub(2)-Based Dielectric Layers? by Oussalah, S, Djezzar, B

“…The aim of this paper is to investigate the reliability of thick oxides that are dedicated to the power integrated device fabrication. The field dependence of…”
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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO2-Based Dielectric Layers? by Oussalah, S, Djezzar, B

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Field acceleration model for TDDB : Still a valid tool to study the reliability of thick SiO2-based dielectric layers? by OUSSALAH, Slimane, DJEZZAR, Boualem

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On the oxide thickness dependence of the time-dependent-dielectric-breakdown by Oussalah, S., Nebel, F.

“…In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under…”
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New oxide-trap extraction method for irradiated MOSFET devices at high frequencies by Djezzar, B., Oussalah, S., Smatti, A.

“…This paper proposes a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called OTCP (Oxide-Trap based on Charge-Pumping)…”
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Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors by Djezzar, B., Smatti, A., Oussalah, S.

“…We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping method from high frequencies (HF) to low frequencies (LF). Thus using the LF-OTCP…”
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Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode by Oussalah, S., Jerisian, R.

“…A simple and rapid method for determining the minority-carrier recombination lifetime /spl tau/ in the base of a power p-i-n diode is described. This method is…”
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A comparative study of different contact resistance test structures dedicated to the power process technology by Oussalah, Slimane, Djezzar, Boualem, Jerisian, Robert

“…This paper presents different contact test structures intended to characterize the metal–semiconductor interface (aluminum–silicon) for power integrated…”
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Quality control system for radiotherapy services by Allam, A., Oussalah, S., Khiter, B., Ferhat, S., Afiane, M., Hocini, B.

“…In this study, we present a quality control system devoted for radiotherapy services. Cancer treatment field concerns also Chemotherapy, Surgery and Other but…”
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Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments by Djamai, D., Gkougkousis, E. Leonidas, Chahdi, M., Lounis, A., Oussalah, S.

“…High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased…”
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Program for the optimization of an OTA for front end electronics based on multi objective genetic algorithms by Dendouga, A., Oussalah, S., Thienpont, D., Lounis, A.

“…The design of an interface to a specific sensor induces costs and design time mainly related to the analog part. So to reduce these costs it should have been…”
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