Search Results - "Ouisse, T"

High temperature solution growth and characterization of Cr2AlC single crystals by Ouisse, T., Sarigiannidou, E., Chaix-Pluchery, O., Roussel, H., Doisneau, B., Chaussende, D.

“…Single crystalline platelets of the nanolaminated Cr2AlC phase have been produced by high temperature solution growth, with typical areas in the range of a few…”
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Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique by Shi, L., Ouisse, T., Sarigiannidou, E., Chaix-Pluchery, O., Roussel, H., Chaussende, D., Hackens, B.

“…Single-crystalline platelets of the nanolaminated V2AlC phase have been produced by high-temperature solution growth followed by a slow cooling process, with…”
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Effects of elevational range shift on the morphology and physiology of a carabid beetle invading the sub-Antarctic Kerguelen Islands by Ouisse, T., Day, E., Laville, L., Hendrickx, F., Convey, P., Renault, D.

“…Climatic changes can induce geographic expansion and altitudinal shifts in the distribution of invasive species by offering more thermally suitable habitats…”
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Birefringence Microscopy of Unit Dislocations in Diamond by Hoa, Le Thi Mai, Ouisse, T, Chaussende, D, Naamoun, M, Tallaire, A, Achard, J

“…We use the rotating polarizer birefringence technique to investigate the properties of dislocations in single crystalline diamond produced by a high pressure…”
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First‐order Raman scattering in three‐layered Mo‐based ternaries: MoAlB, Mo2Ga2C and Mo2GaC by Chaix‐Pluchery, O., Thore, A., Kota, S., Halim, J., Hu, C., Rosen, J., Ouisse, T., Barsoum, M. W.

“…Here, we report, for the first time, on the first‐order Raman spectra of the layered Mo‐based ternaries: MoAlB, Mo2Ga2C and Mo2GaC. Polycrystalline samples…”
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New insights into the ecology of Merizodus soledadinus, a predatory carabid beetle invading the sub-Antarctic Kerguelen Islands by Ouisse, T., Laparie, M., Lebouvier, M., Renault, D.

“…Our knowledge of the main determinants of invasion success is still incomplete. Among these factors, the effects of biological traits, including fecundity,…”
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Heat Capacity and Anisotropic Thermal Conductivity in Cr2AlC Single Crystals at High Temperature by Champagne, A, Battaglia, J.-L, Ouisse, T, Ricci, F, Kusiak, A, Pradere, C, Natu, V, Dewandre, A, Verstraete, M. J, Barsoum, M. W, Charlier, J.-C

“…The temperature dependences of both heat capacity and thermal conductivity in nanolamellar Cr2AlC single crystals are measured using modulated photothermal…”
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Electronic and thermal properties of Nb2CCl2 MXenes by Pazniak, H., Ouisse, T., Wiedwald, U., Gonzalez-Julian, J., Ito, T., Wilhelm, F., Rogalev, A., Quessada, S.

“…The molten salt synthesis has recently opened up new opportunities to functionalize two-dimensional MXenes with uniform halogen terminations. In this work, we…”
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Large area quasi-free standing monolayer graphene on 3C-SiC(111) by Coletti, C., Emtsev, K. V., Zakharov, A. A., Ouisse, T., Chaussende, D., Starke, U.

“…Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an…”
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Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals by Seiss, M., Ouisse, T., Chaussende, D.

“…We have studied the dependence of the terrace width of growth spirals on local supersaturation during the growth of on-axis silicon carbide (SiC) crystals…”
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Imaging and controlling electron transport inside a quantum ring by Hackens, B, Huant, S, Martins, F, Ouisse, T, Sellier, H, Bollaert, S, Wallart, X, Cappy, A, Chevrier, J, Bayot, V

“…Traditionally, the understanding of quantum transport, coherent and ballistic, relies on the measurement of macroscopic properties such as the conductance…”
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Imaging electron wave functions inside open quantum rings by Martins, F, Hackens, B, Pala, M G, Ouisse, T, Sellier, H, Wallart, X, Bollaert, S, Cappy, A, Chevrier, J, Bayot, V, Huant, S

“…Combining scanning gate microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of the electron probability density |Psi|(2)(x,y)…”
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Micropipe-induced birefringence in 6H silicon carbide by Ouisse, T., Chaussende, D., Auvray, L.

“…The micropipe‐induced birefringence of 6H silicon carbide (SiC) is measured and quantitatively modelled. A good agreement can be obtained between theory and…”
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Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration by Liu, F.Y., Diab, A., Ionica, I., Akarvardar, K., Hobbs, C., Ouisse, T., Mescot, X., Cristoloveanu, S.

“…► The pseudo-MOSFET method is extended for heavily doped SOI wafers. ► An updated model describing the conduction regimes is derived. ► High-dose implantation…”
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Critical assessment of birefringence imaging of dislocations in 6H silicon carbide by Hoa, Le Thi Mai, Ouisse, T., Chaussende, D.

“…Using 6H silicon carbide (6H-SiC) wafers including domains with different values of residual stress, the birefringence pattern of threading dislocations is…”
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Ultimately thin double-gate SOI MOSFETs by Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., Murase, K.

“…The operation of 1-3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyzed…”
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Electrical bistability of polyfluorene devices by Ouisse, T., Stéphan, O.

“…A specific layer transfer process is developed so as to obtain multi-layer devices based on spin-coated polymers. This process is put to good use for embedding…”
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Local density of states in mesoscopic samples from scanning gate microscopy by Pala, M. G., Hackens, B., Martins, F., Sellier, H., Bayot, V., Huant, S., Ouisse, T.

“…We study the relationship between the local density of states (LDOS) and the conductance variation $\Delta G$ in scanning-gate-microscopy experiments on…”
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study by Coletti, C., Forti, S., Principi, A., Emtsev, K. V., Zakharov, A. A., Daniels, K. M., Daas, B. K., Chandrashekhar, M. V. S., Ouisse, T., Chaussende, D., MacDonald, A. H., Polini, M., Starke, U.

“…In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and…”
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Modeling of dielectric charging in electrostatic MEMS switches by Koszewski, A., Souchon, F., Dieppedale, Ch, Ouisse, T.

“…The most important failure mechanism for electrostatic MEMS switches is dielectric charging, which contributes to a significant reduction of the device…”
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