Search Results - "Ougazzaden, A."

Photoinduced doping in hexagonal boron nitride by Perepeliuc, A., Gujrati, R., Srivastava, A., Vuong, P., Ottapilakkal, V., Voss, P. L., Sundaram, S., Salvestrini, J. P., Ougazzaden, A.

“…Hexagonal boron nitride is shown to exhibit very significant persistent photoconductivity after UV illumination. This behavior can be initiated by sub-bandgap…”
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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber by Arif, M., Elhuni, W., Streque, J., Sundaram, S., Belahsene, S., El Gmili, Y., Jordan, M., Li, X., Patriarche, G., Slaoui, A., Migan, A., Abderrahim, R., Djebbour, Z., Voss, P.L., Salvestrini, J.P., Ougazzaden, A.

“…We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber…”
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Single crystalline boron rich B(Al)N alloys grown by MOVPE by Vuong, P., Mballo, A., Sundaram, S., Patriarche, G., Halfaya, Y., Karrakchou, S., Srivastava, A., Krishnan, K., Sama, N. Y., Ayari, T., Gautier, S., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

“…Boron rich BAlN alloys have been grown on 2-inch sapphire substrates by Metal-Organic Vapor Phase Epitaxy. The surface morphology of BAlN alloys exhibits a…”
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs by Soltani, A., Benbakhti, B., Gerbedoen, J.-C., Khediri, A., Maher, H., Salvestrini, J.-P., Ougazzaden, A., Bourzgui, N. E., Barkad, H. A.

“…A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This process uses…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices by Srour, H., Salvestrini, J. P., Ahaitouf, A., Gautier, S., Moudakir, T., Assouar, B., Abarkan, M., Hamady, S., Ougazzaden, A.

“…Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors…”
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Bandgap energy bowing parameter of strained and relaxed InGaN layers by Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

“…This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal…”
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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors by Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., El Gmili, Y., Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., Ougazzaden, A.

“…We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with…”
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content by Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

“…Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been…”
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Interface state effects in GaN Schottky diodes by Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A., Salvestrini, J.P.

“…Current voltage (I-V) and capacitance voltage (C-V) measurements have been performed versus temperature on GaN Schottky diodes. The results show an increase of…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN by Rogers, D. J., Hosseini Teherani, F., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M. R., Peres, M., Neves, A., McGrouther, D., Chapman, J. N., Razeghi, M.

“…Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising…”
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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm by Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

“…We report on the growth of Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.63)N MQWs grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN template by…”
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Deep structural analysis of novel BGaN material layers grown by MOVPE by Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A.

“…BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated…”
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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE by Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

“…AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Bandgap bowing in BGaN thin films by Ougazzaden, A., Gautier, S., Moudakir, T., Djebbour, Z., Lochner, Z., Choi, S., Kim, H. J., Ryou, J.-H., Dupuis, R. D., Sirenko, A. A.

“…We report on the bandgap variation in thin films of B x Ga 1 − x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical…”
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Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth by Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A.

“…Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of…”
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High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping by Soltani, A., Rousseau, M., Gerbedoen, J.-C., Mattalah, M., Bonanno, P. L., Telia, A., Bourzgui, N., Patriarche, G., Ougazzaden, A., BenMoussa, A.

“…High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse…”
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