Search Results - "Oudar, J. L."

A passive all-optical semiconductor device for level amplitude stabilization based on fast saturable absorber by Nguyen, H. Trung, Oudar, J.-L., Bouchoule, S., Aubin, G., Sauvage, S.

“…A high-speed saturable-absorber-based device (response time below 2.5 ps ) providing a significant amplitude stabilization is demonstrated. The experimental…”
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Quantum-well saturable absorber at 1.55μm on GaAs substrate with a fast recombination rate by Le Dû, M., Harmand, J.-C., Mauguin, O., Largeau, L., Travers, L., Oudar, J.-L.

“…We propose and realize a structure designed for fast saturable absorber devices grown on GaAs substrate. The active region consists of a 1.55μm absorbing…”
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High power dissipative soliton in an Erbium-doped fiber laser mode-locked with a high modulation depth saturable absorber mirror by Cabasse, A, Martel, G, Oudar, J L

“…We report on a passively mode-locked erbium-doped fiber laser, using a high nonlinear modulation depth saturable absorber mirror, in a Fabry-Perot cavity. A…”
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Fast Extinction Ratio Enhancement With a Graphene-Based Device on 1.5~\mu \text Optical Signals by Fang, L., Aubin, G., Madouri, A., Oudar, J.-L

“…Ability of fast intensity discrimination provided by a graphene-based saturable absorber device is demonstrated in the perspective of all-optical signal…”
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80-Gb/s OTDM System Analysis of a Vertical Microcavity-Based Saturable Absorber for the Enhancement of Pulse Pedestal Suppression by Clarke, A.M., Anandarajah, P.M., Bramerie, L., Guignard, C., Maher, R., Massoubre, D., Shen, A., Oudar, J.L., Barry, L.P., Simon, J.C.

“…In future high-speed optical time-division-multiplexed (OTDM) systems, an important factor that needs to be considered for optical pulse generation schemes is…”
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Phase and amplitude characterization of a 40-GHz self-pulsating DBR laser based on autocorrelation analysis by Gosset, C., Renaudier, J., Guang-Hua Duan, Aubin, G., Oudar, J.-L.

“…The authors propose a self-referenced method to measure the phase difference between optical beat notes in passively mode-locked self-pulsating (SP)…”
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Cascadability and reshaping properties of a saturable absorber inserted inside a RZ transmission line for future 160-Gbit/s all-optical 2R-regenerators by Fatome, J., Pitois, S., Massoubre, D., Oudar, J.-L., Millot, G.

“…In this prospective work, we analyze the behavior of a quantum-well microcavity saturable absorber component cascaded into a 100-km SMF RZ transmission line in…”
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Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser by Symonds, C., Sagnes, I., Oudar, J.-L., Bouchoule, S., Garnache, A., Berggren, J., Strassner, M.

“…We report room temperature (20 °C) continuous-wave operation of 1.55 μm vertical-external-cavity surface-emitting lasers. The optically pumped monolithic…”
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Ultra-thin engraved 3D taper structure in a crystalline material using FIB by Fang, L., Gogneau, N., Oudar, J.L., Bourhis, E., Gierak, J.

“…[Display omitted] •We experimentally investigated the sputtering yield of crystalline InP using focused Ga+ beam.•An ultra-thin taper structure was fabricated…”
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Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy by Rivera, T., Debray, J.-P., Gérard, J. M., Legrand, B., Manin-Ferlazzo, L., Oudar, J. L.

“…The optical losses in dry-etched monolithic microresonators have been studied as a function of their lateral dimensions. Cylindrical microresonators with…”
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Absorption edge singularities in highly excited semiconductors by FOING, J.-P, HULIN, D, JOFFRE, M, JACKSON, M. K, OUDAR, J.-L, TANGUY, C, COMBESCOT, M

“…Article abstract not included…”
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Subpicosecond spectral hole burning due to nonthermalized photoexcited carriers in GaAs by OUDAR, J. L, HULIN, D, MIGUS, A, ANTONETTI, A, ALEXANDRE, F

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Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions by Mangeney, J., Lopez, J., Stelmakh, N., Lourtioz, J.-M., Oudar, J.-L., Bernas, H.

“…This letter reports the results of a comparative study on heavy- and light-ion-irradiated semiconductors for fast saturable absorbers. The linear absorption of…”
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Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates by Massoubre, D., Oudar, J.-L., O'Hare, A., Gay, M., Bramerie, L., Simon, J.-C., Shen, A., Decobert, J.

“…The limitations owing to device heating and thermo-optic effects in high-speed quantum-well microcavity saturable absorber devices are investigated both…”
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Cascadability assessment of a 2R regenerator based on a saturable absorber and a semiconductor optical amplifier in a path switchable recirculating loop by Gay, M., Bramerie, L., Massoubre, D., O'Hare, A., Shen, A., Oudar, J.L., Simon, J.C.

“…We assess a new 2R regenerator based on a microcavity saturable absorber and a semiconductor optical amplifier. Cascadability is demonstrated and the impact of…”
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Direct observation of the second-order coherence of parametrically generated light by ABRAM, I, RAJ, R. K, OUDAR, J. L, DOLIQUE, G

“…The second-harmonic spectrum of the output of an optical parametric emitter at degeneracy exhibits a narrow peak, much sharper than the spectrum of the…”
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Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting by Abram, I., Iung, S., Kuszelewicz, R., Le Roux, G., Licoppe, C., Oudar, J. L., Rao, E. V. K., Bloch, J. I., Planel, R., Thierry-Mieg, V.

“…We present a monolithic epitaxially grown λ/2 semiconductor microcavity that contains two InGaAs quantum wells in its AlAs spacer. This particular design…”
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Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity by PELLAT, D, AZOULAY, R, LEROUX, G, DUGRAND, L, RAFFLE, Y, KUSZELEWICZ, R, OUDAR, J. L

“…We report on a novel monolithic all-optical bistable device operating at 980 nm, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum…”
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High contrast multiple quantum well optical bistable device with integrated bragg reflectors by SFEZ, B. G, OUDAR, J. L, MICHEL, J. C, KUSZELEWICZ, R, AZOULAY, R

“…Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by…”
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Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength by Jeannes, F., Patriarche, G., Azoulay, R., Ougazzaden, A., Landreau, J., Oudar, J.L.

“…We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of…”
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