Bright green organic light-emitting devices having a composite electron transport layer

A bright green organic light-emitting device employing a co-deposited Al–Alq3 layer has been fabricated. The device structure is glass/indium tin oxide (ITO)/ N, N′-diphenyl-N, N′- (3-methylphenyl)-1, 1′-biphenyl-4, 4′-diamine (TPD)/tris(8-quinolinolato) aluminum (Alq3)/ Al–Alq3/Al. In this device,...

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Bibliographic Details
Published in:	Microelectronics Vol. 37; no. 9; pp. 916 - 918
Main Authors:	Wang, Fangcong, Liu, Su, Zhou, Jianlin, Sun, Shuo, Qi, Bingli, Ou, Guping
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-09-2006
Subjects:	Buffer layer Electron transport layer (ETL) Organic light-emitting device (OLED) Buffer layer Organic light-emitting device (OLED) Electron transport layer (ETL)
Online Access:	Get full text
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Summary:	A bright green organic light-emitting device employing a co-deposited Al–Alq3 layer has been fabricated. The device structure is glass/indium tin oxide (ITO)/ N, N′-diphenyl-N, N′- (3-methylphenyl)-1, 1′-biphenyl-4, 4′-diamine (TPD)/tris(8-quinolinolato) aluminum (Alq3)/ Al–Alq3/Al. In this device, Al–Alq3 is used as electron transport layer (ETL). The device shows an operation voltage of 6.1V at 20mA/cm2. At optimal condition, the brightness of a device at 20mA/cm2 is 2195 cd/m2 achieved a luminance efficiency of 5.64lm/W. The result proves that the composite Al–Alq3 layer is suitable for the ETL of organic light-emitting devices (OLEDs).
ISSN:	1879-2391 1879-2391
DOI:	10.1016/j.mejo.2006.01.013